25 Q 80 Search Results
25 Q 80 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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GT25Q80A-U
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NOR Flash以其合适的容量、灵活的存取操作、及其非易失性产品特性,非常适合作为智能设备的指令程序存储器。随着5G、IOT、AMOLED、TDDI、TWS及汽车电子等应用市场快速发展,NOR Flash的需求保持持续的增长动力。特别是在汽车电子、5G基站等需要高可靠性的应用场景,NOR Flash已经成为刚需,其价值不可替代。聚辰半导体以其领先的存储器设计技术,推出SPI NOR Flash产品,可以覆盖从消费级,到工业级,直至汽车级的所有应用,产品在可靠性,功耗,温度和速度等关键性能指标方面达到国内外前沿水准。 | Original | ||||
GD25Q80C
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GigaDevice Semiconductor (Beijing) Inc | 8M-bit Serial Flash, SPI, Dual/Quad SPI, Dual I/O 240Mbits/s, Quad I/O & Quad output 480Mbits/s, 8–LEAD VSOP/SOP, 8–LEAD WSON/USON. | Original | ||||
GT25Q80A-L
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NOR Flash以其合适的容量、灵活的存取操作、及其非易失性产品特性,非常适合作为智能设备的指令程序存储器。随着5G、IOT、AMOLED、TDDI、TWS及汽车电子等应用市场快速发展,NOR Flash的需求保持持续的增长动力。特别是在汽车电子、5G基站等需要高可靠性的应用场景,NOR Flash已经成为刚需,其价值不可替代。聚辰半导体以其领先的存储器设计技术,推出SPI NOR Flash产品,可以覆盖从消费级,到工业级,直至汽车级的所有应用,产品在可靠性,功耗,温度和速度等关键性能指标方面达到国内外前沿水准。 | Original | ||||
GD25Q80E
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GigaDevice Semiconductor (Beijing) Inc | 8M-bit, SPI, Dual/Quad SPI, Dual I/O 266Mbit/s, Quad I/O 532Mbit/s. | Original |
25 Q 80 Price and Stock
Winbond Electronics Corp W25Q80DVUXIE-TRIC FLASH 8MBIT SPI/QUAD 8USON |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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W25Q80DVUXIE-TR | Cut Tape | 180,000 | 1 |
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Buy Now | |||||
BYTe Semiconductor BY25Q80ESMIG(R)8 MBIT, 3.0V (2.7V TO 3.6V), -40 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BY25Q80ESMIG(R) | Digi-Reel | 88,565 | 1 |
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Buy Now | |||||
BYTe Semiconductor BY25Q80AWTIG(T)IC FLASH 8MBIT SPI/QUAD 8SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BY25Q80AWTIG(T) | Tube | 9,995 | 1 |
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Buy Now | |||||
BYTe Semiconductor BY25Q80AWSIG(T)IC FLASH 8MBIT SPI/QUAD 8SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BY25Q80AWSIG(T) | Tube | 9,496 | 1 |
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Buy Now | |||||
Winbond Electronics Corp W25Q80EWSNIGIC FLASH 8MBIT SPI/QUAD 8SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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W25Q80EWSNIG | Tube | 5,100 | 1 |
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Buy Now | |||||
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W25Q80EWSNIG | 16 Weeks | 2,500 |
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Get Quote | ||||||
25 Q 80 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK ) |
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27N80 25N80 -264A | |
palce16v8 programming algorithm
Abstract: 16V8Q PAL16L8 programming algorithm 16V8H-15 PAL 16V8Q 16V8H-10 16V8H-5 16v8h 16v8h-7 16V8Z-25
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PALCE16V8 PALCE16V8Z H-5/7/10/15/25, Q-10/15/25 H-10/25, Q-20/25 PALCE16V8 PALCE16V8Z 20-Pin palce16v8 programming algorithm 16V8Q PAL16L8 programming algorithm 16V8H-15 PAL 16V8Q 16V8H-10 16V8H-5 16v8h 16v8h-7 16V8Z-25 | |
htw 323
Abstract: plji palce programming algorithm
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OCR Scan |
H-5/7/10/15/25, Q-10/15/25 H-15/25. Q-20/25 H-15/20/25 PALCE20V8 24-Pin 20V8/AS 24-p8 htw 323 plji palce programming algorithm | |
20V8Q
Abstract: SL06 20V8H-15 20V8 GAL20V8 PAL20R8 PALCE20V8 PD3024 pal20v8
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H-5/7/10/15/25, Q-10/15/25 H-15/25, Q-20/25 PALCE20V8 24-Pin PD3024) 28-Pin 20V8Q SL06 20V8H-15 20V8 GAL20V8 PAL20R8 PD3024 pal20v8 | |
AM 16v8
Abstract: palce16v8 programming algorithm PALCE erase AMD PALCE PALCE Programmer palce programming algorithm
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OCR Scan |
H-5/7/10/15/25, Q-10/15/25 H-10/15/25, Q-20/25 PALCE16V8 20-Pin PAL16R8 PAL10H8 AM 16v8 palce16v8 programming algorithm PALCE erase AMD PALCE PALCE Programmer palce programming algorithm | |
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Contextual Info: A Return loss F r e q u e n c y MHz 4 10 16 20 31,25 62,5 100 (dB) 23 25 25 25 2 3,6 21,5 20,1 Near-end crosstalk attenuation F r e q u e n c y (MHz) 1 4 10 16 20 31,25 62,5 100 Typ v a l u e (dB - 100m) 80 76 70 65 63 60 55 50 Far-end crosstalk attenuation |
OCR Scan |
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MACH130
Abstract: MACH230 PAL22V10 mach131
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Q-20/25 MACH435-12/15/20, PAL33V16" MACH130, MACH131, MACH230, MACH231 17469E-26 17469E-27 MACH130 MACH230 PAL22V10 mach131 | |
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Contextual Info: m Small Type Minibright LED series T y p e No. Unit: mm L igh tin g C o lo r L N 0 1 201 C Q — (L) Red L N Q 1 301 C (Q )— (L) G re e n L N 0 1 401 C (Q )— (L) Am ber L N 0 1 801 C ( Q ) - ( L ) O ra n ge Absolute Maximum Ratings (Ta=25 ’C) Lighting Color |
OCR Scan |
01201C LN01401C | |
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Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 25, 2002 FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus |
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UT8R512K8 0E14n/cm 36-lead 40-lead | |
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Contextual Info: 16 max. T: vb 1 CO N- Q Q Lampensockel nach DIN EN 60061-1: SX6s / Lamp base in accordance to DIN EN 60061-1: SX6s Elektrische und optische Daten sind bei einer Umgebungstemperatur von 25°C gemessen. Electrical and optical data are measured at an ambient temperature of 25°C. |
OCR Scan |
11-Nr. 26mcd 59mcd 43mcd 630nm 565nm 585nm D-67098 1510045X | |
thermal fuse M10
Abstract: MACH130 MACH230 PAL22V10 Mach435
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Q-20/25 MACH435-12/15/20, PAL33V16" MACH130, MACH131, MACH230, MACH231 MACH435 17469E-26 thermal fuse M10 MACH130 MACH230 PAL22V10 | |
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Contextual Info: Document 195-1 Chip Inductors – 0603CS 1608 100 90 70 Q factor 12 nH 33 nH 80 68 nH 60 120 110 100 3.9 nH 90 80 70 60 50 40 30 25°C Typical Q vs Frequency Irms Derating Percent of rated Irms Ultra-small size, exceptional Q and high SRFs make these inductors ideal for high frequency |
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0603CS | |
Power MOSFET TT 2146
Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
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OCR Scan |
APT8030FN APT7530FN 151ln. Power MOSFET TT 2146 MOSFET TT 2146 TO220H Z59 diode 414x | |
AE413RAA
Abstract: chip inductors
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AE413RAA 8753ES CCF1297 CCF858 AE101-2â AE413RAA chip inductors | |
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Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM |
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15N80Q O-247 O-268 125OC Figure10. | |
15N80Q
Abstract: 15N80 125OC IXFH14N80 IXFH15N80
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15N80Q O-247 O-268 125OC Figure10. 15N80Q 15N80 125OC IXFH14N80 IXFH15N80 | |
transistor 016hContextual Info: Standard Products UT80CRH196KDS Microcontroller Advanced Datasheet March 25, 2002 INTRODUCTION q 20MHz 16-bit Microcontroller compatible with industry standard’s MCS-96 ISA - Register to Register Architecture - 1000 Byte Register RAM q Three 8-bit I/O Ports |
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UT80CRH196KDS 20MHz 16-bit MCS-96 MIL-STD-883 25MeV-cm2 UT80CRH196ified transistor 016h | |
30t60
Abstract: 49SMX-CB X-TAL 3.579545 Mhz
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49SMX-CB 49SMX-CB R/RR/lkk/20 30t60 X-TAL 3.579545 Mhz | |
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Contextual Info: LOGIC DEVICES INC SbE D • 5Sfc>ST05 Q D Q i n b 7 ■ T-46-23-14 1 Megabit 128K x 8-bit Static RAM Module DESCRIPTION FEATURES □ 1024K (128K x 8-bit) Static RAM Module Q Advanced CMOS Technology □ High Speed — to 25 ns worst-case □ Low Power Operation |
OCR Scan |
T-46-23-14 1024K IDT8M824S 32-pin LMM824 LMM824 L7C199 DG01S01 | |
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Contextual Info: SÌ9804DY Vishay Siliconix N-Ch Reduced Qg, Fast Switching MOSFET cH Vo s V Rds(ON) (f ì ) Id (A) 0.023 @ V q s = 4.5 V ±7.8 0.030 V GS = 3.0 V ±6.8 25 D Q SO-8 Ô S N-Channel M O SFET SYM B O L P A R A M ETER LIMIT Drain-Source Voltage Vos 25 Gate-Source Voltage |
OCR Scan |
9804DY S-54699-- 01-Sep-97 | |
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Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ ^ Q ^ Q Q Q Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F=l.ldB , |S2lel2= 12dB f= 1GHz o <e>n 1 Ò 2 M A X IM U M RATIN G S (Ta = 25°C) |
OCR Scan |
2SC5066 | |
32N50QContextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM |
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32N50Q 32N50Q O-247 O-268 125OC | |
GDA2510-12BB
Abstract: 25X10
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250mm UL94-VO GDA2510-12BB 25X10 | |
ScansU9X26Contextual Info: MivmynbCHbm rEHEPATOPHbifl t p m o a TRIODE MMnynbCHbiü reHepaTopHbM Tpno,q TM-25 npeflHa3HaneH fljia reHepupoBaHun KO/ieôaHnii b caHTi/iMetpobom m flequMeTpoBOM flnana30Hax bojih npi/i hmnyxibCHOii aHOflHOM m ri4-25 T h e TM-25 triode is used a s an oscillator with pulsed |
OCR Scan |
TM-25 flnana30Hax ri4-25 ScansU9X26 | |