25 Q 80 Search Results

Contextual Info: □ IXYS VDSS HiPerFET Power MOSFETs 27N80 IXFK 25N80 IXFN 27N80 IXFN 25N80 ix f k N-Channel Enhancement Mode AvalancheRated, High dv/dt, Lowtrr 800 800 800 800 V V V V D ^D25 27 25 27 25 A A A A D S o n 0.30 0.35 0.30 0.35 Q Q Q Q TO -264A A (IX FK )

palce16v8 programming algorithm

Abstract: 16V8Q PAL16L8 programming algorithm 16V8H-15 PAL 16V8Q 16V8H-10 16V8H-5 16v8h 16v8h-7 16V8Z-25
Contextual Info: PALCE16V8 PALCE16V8Z COM’L:H-5/7/10/15/25, Q-10/15/25 IND:H-10/25, Q-20/25 COM’L:-25 IND:-12/15/25 PALCE16V8 and PALCE16V8Z Families EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ◆ Pin and function compatible with all 20-pin PAL devices

htw 323

Abstract: plji palce programming algorithm
Contextual Info: COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25. Q-20/25 MIL: H-15/20/25 PALCE20V8 Family EE CMOS 24-Pin Universal Programmable Array Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Pin, function and fuse-map compatible with all GAL 20V8/AS ■ Electrically erasable CMOS technology pro­

20V8Q

Abstract: SL06 20V8H-15 20V8 GAL20V8 PAL20R8 PALCE20V8 PD3024 pal20v8
Contextual Info: COM'L: H-5/7/10/15/25, Q-10/15/25 IND: H-15/25, Q-20/25 PALCE20V8 Family EE CMOS 24-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS ◆ Pin and function compatible with all PAL 20V8 devices ◆ Electrically erasable CMOS technology provides reconfigurable logic and full testability

AM 16v8

Abstract: palce16v8 programming algorithm PALCE erase AMD PALCE PALCE Programmer palce programming algorithm
Contextual Info: F IN A L COM’L: H-5/7/10/15/25, Q-10/15/25 IND: H-10/15/25, Q-20/25 PALCE16V8 Family AdvaM n,“ o EE CMOS 20-Pin Universal Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS • Pin and function compatible with all 20-pin GAL devices ■ Programmable output polarity

Contextual Info: A Return loss F r e q u e n c y MHz 4 10 16 20 31,25 62,5 100 (dB) 23 25 25 25 2 3,6 21,5 20,1 Near-end crosstalk attenuation F r e q u e n c y (MHz) 1 4 10 16 20 31,25 62,5 100 Typ v a l u e (dB - 100m) 80 76 70 65 63 60 55 50 Far-end crosstalk attenuation

MACH130

Abstract: MACH230 PAL22V10 mach131
Contextual Info: FINAL COM’L: -12/15/20, Q-20/25 MACH435-12/15/20, Q-20/25 Lattice Semiconductor High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges

Contextual Info: m Small Type Minibright LED series T y p e No. Unit: mm L igh tin g C o lo r L N 0 1 201 C Q — (L) Red L N Q 1 301 C (Q )— (L) G re e n L N 0 1 401 C (Q )— (L) Am ber L N 0 1 801 C ( Q ) - ( L ) O ra n ge Absolute Maximum Ratings (Ta=25 ’C) Lighting Color

Contextual Info: Standard Products UT8R512K8 512K x 8 SRAM Advanced Data Sheet March 25, 2002 FEATURES q 10ns maximum access time q Asynchronous operation for compatibility with industrystandard 512K x 8 SRAMs q CMOS compatible inputs and output levels, three-state bidirectional data bus

Contextual Info: 16 max. T: vb 1 CO N- Q Q Lampensockel nach DIN EN 60061-1: SX6s / Lamp base in accordance to DIN EN 60061-1: SX6s Elektrische und optische Daten sind bei einer Umgebungstemperatur von 25°C gemessen. Electrical and optical data are measured at an ambient temperature of 25°C.

thermal fuse M10

Abstract: MACH130 MACH230 PAL22V10 Mach435
Contextual Info: FINAL COM’L: -12/15/20, Q-20/25 MACH435-12/15/20, Q-20/25 Lattice/Vantis High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins in PLCC ■ Flexible clocking ■ 128 Macrocells — Four global clock pins with selectable edges — Asynchronous mode available for each

Contextual Info: Document 195-1 Chip Inductors – 0603CS 1608 100 90 70 Q factor 12 nH 33 nH 80 68 nH 60 120 110 100 3.9 nH 90 80 70 60 50 40 30 25°C Typical Q vs Frequency Irms Derating Percent of rated Irms Ultra-small size, exceptional Q and high SRFs make these inductors ideal for high frequency

Power MOSFET TT 2146

Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
Contextual Info: ADVANCED P O WE R TECHNOLOGY OfiE D | 0257^0^ 4 | , T -2 9-I APT8030FN 800V 29A 0.30 Q APT7530FN 750V 29A 0.30 Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter

AE413RAA

Abstract: chip inductors
Contextual Info: 1008 CHIP INDUCTORS Outgassing Compliant Chip Inductors AE413RAA Current Derating • High SRF and excellent Q values ■ Tight tolerances, many values at 1% ■ 28 inductance values from 10 nH to 1 µH 120 110 90 80 70 60 50 40 25°C Typical Q vs Frequency

Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM

15N80Q

Abstract: 15N80 125OC IXFH14N80 IXFH15N80
Contextual Info: HiPerFETTM Power MOSFETs IXFH 15N80Q IXFT 15N80Q Q-Class VDSS ID25 RDS on Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 800 800 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C 15 A IDM TC = 25°C, pulse width limited by TJM

transistor 016h

Contextual Info: Standard Products UT80CRH196KDS Microcontroller Advanced Datasheet March 25, 2002 INTRODUCTION q 20MHz 16-bit Microcontroller compatible with industry standard’s MCS-96 ISA - Register to Register Architecture - 1000 Byte Register RAM q Three 8-bit I/O Ports

30t60

Abstract: 49SMX-CB X-TAL 3.579545 Mhz
Contextual Info: Quartz Crystal Units CUSTOM-DESIGNED HIGH SPEC CRYSTALS 11 X 5mm FAMILY 49SMX-CB N SPECIFICATIONS 49SMX-CB(N) 3.579545 MHz to 80.000 MHz O: ± 10 ppm at + 25˚C ± 3˚C Q: ± 15 ppm at + 25˚C ± 3˚C R: ± 20 ppm at + 25˚C ± 3˚C T: ± 30 ppm at + 25˚C ± 3˚C

Contextual Info: LOGIC DEVICES INC SbE D • 5Sfc>ST05 Q D Q i n b 7 ■ T-46-23-14 1 Megabit 128K x 8-bit Static RAM Module DESCRIPTION FEATURES □ 1024K (128K x 8-bit) Static RAM Module Q Advanced CMOS Technology □ High Speed — to 25 ns worst-case □ Low Power Operation

Contextual Info: SÌ9804DY Vishay Siliconix N-Ch Reduced Qg, Fast Switching MOSFET cH Vo s V Rds(ON) (f ì ) Id (A) 0.023 @ V q s = 4.5 V ±7.8 0.030 V GS = 3.0 V ±6.8 25 D Q SO-8 Ô S N-Channel M O SFET SYM B O L P A R A M ETER LIMIT Drain-Source Voltage Vos 25 Gate-Source Voltage

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ ^ Q ^ Q Q Q Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F=l.ldB , |S2lel2= 12dB f= 1GHz o <e>n 1 Ò 2 M A X IM U M RATIN G S (Ta = 25°C)

32N50Q

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM

GDA2510-12BB

Abstract: 25X10
Contextual Info: DC Fans by Comair Rotron : 25 x 25 x 10 mm Standard Features : Pressure P vs. Flow (Q) Curves : 25 x 25 x 10 mm • Size: (L x W x H), 0.98” x 0.98” x 0.39” (25 mm x 25mm x 10mm) • Airflow: 4.54 m3/hour (2.67 CFM) • Noise Level: 27.39 dBA, as measured in free air

ScansU9X26

Contextual Info: MivmynbCHbm rEHEPATOPHbifl t p m o a TRIODE MMnynbCHbiü reHepaTopHbM Tpno,q TM-25 npeflHa3HaneH fljia reHepupoBaHun KO/ieôaHnii b caHTi/iMetpobom m flequMeTpoBOM flnana30Hax bojih npi/i hmnyxibCHOii aHOflHOM m ri4-25 T h e TM-25 triode is used a s an oscillator with pulsed