24JUN08 Search Results

EIA-364-18

Abstract: JESD22-B102 EIA-364-27 POKE EIA-364-13 EIA-364-20 EIA-364-28 EIA-364-31 EIA-364-32 quality acceptance plan
Contextual Info: Product Specification 108-2284 24Jun08 Rev A SMT and Through-Hole Poke-In Connector 1. SCOPE 1.1. Content This specification covers performance, tests and quality requirements for the Tyco Electronics Surface Mount SMT and Through-Hole Poke-In Connectors used with 18 to 22 AWG solid copper wire, 18 to

Contextual Info: THIS DRAWING IS UNPUBLISHED. REl EaSH TÔR Ru B l i ì a Tìò n - BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC DIST R E V IS IO N S J AU" RIGHTS RESERVED- LTR 01 DESCRIPTION REVISED ECR—0 8 —0 1 5 8 0 8 DATE DWN APVD 24JUN08 SF

DIODE 300U 120 C

Contextual Info: 300U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Alloy diode RoHS • Popular series for rough service COMPLIANT • Stud cathode and stud anode version • RoHS compliant • Designed and qualified for industrial level

Contextual Info: P Vishay Sfernice High Precision Wraparound - Wide Ohmic Value Range Thin Film Chip Resistors FEATURES • Load life stability at ± 70 °C for 2000 h: 0.1 % under Pn/0.05 % under Pd Pb-free • Low temperature coefficient down to 5 ppm/°C - 25 °C; + 85 °C

Contextual Info: H EE GEN FR ALO CAT22C10 256-Bit Nonvolatile CMOS Static RAM LE FEATURES • Single 5V Supply A D F R E ETM ■ Low CMOS Power Consumption: –Active: 40mA Max. –Standby: 30µA Max. ■ Fast RAM Access Times: –200ns –300ns ■ JEDEC Standard Pinouts:

IRFI9Z34G

Abstract: SiHFI9Z34G SiHFI9Z34G-E3
Contextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

malrek

Abstract: Capacitor 24 0.25 uF vishay
Contextual Info: EKV Vishay Roederstein Aluminum Capacitors Radial Style FEATURES • Polarized aluminum electrolytic capacitor • High ripple current RoHS • High reliability COMPLIANT • High load life up to 10 000 h APPLICATIONS • For electronic lighting ballast • Power supply

IRFIB7N50L

Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Contextual Info: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration

10TQ035

Abstract: 10TQ045 10TQ 40HFL40S02 IRFP460
Contextual Info: 10TQ. Series Vishay High Power Products Schottky Rectifier, 10 A FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation Base cathode 2 TO-220AC • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: IRFI9Z34G, SiHFI9Z34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature

124lm

Abstract: OJ-SS-112LM
Contextual Info: 2 3 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO FIFCTRONICS CORPORATION. ALL MGHIS RESERVED? C COPYRIGHT o D L0C HB DIST REVISIONS p LTR DESCRIPTION ECN DATE DWN APVD C MODIFY VENT HOLE&ADD NOTE ECO-06-008136 15—FEB—06 JG HSU D CHANGE TE LOGO&DATE CODE

Contextual Info: IRFP048, SiHFP048 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 110 Qgs (nC) 29 Qgd (nC) 38 Configuration RoHS* • 175 °C Operating Temperature COMPLIANT • Ease of Paralleling

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements

8ETX06

Contextual Info: 8ETX06/8ETX06FP Vishay High Power Products Hyperfast Rectifier, 8 A FRED PtTM FEATURES 8ETX06 8ETX06FP • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Fully isolated package VINS = 2500 VRMS

Contextual Info: EKB Vishay Roederstein Aluminum Capacitors Radial Style FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case • Miniaturized, high CV-product per unit volume • Extended temperature range: 105 °C

UNF-2A

Abstract: 1N36
Contextual Info: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in

IRFP15N60L

Abstract: SiHFP15N60L
Contextual Info: IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) (Ω) VGS = 10 V 0.385 Available RoHS* Qg (Max.) (nC) 100 Qgs (nC) 30 • Lower Gate Charge Results in Simple Drive

irfp064 driver circuit

Abstract: IRFP064 IRFP064 APPLICATION
Contextual Info: IRFP064, SiHFP064 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 60 RDS(on) (Ω) VGS = 10 V 0.009 Qg (Max.) (nC) 190 Qgs (nC) 55 Qgd (nC) 90 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP244

Contextual Info: IRFP244, SiHFP244 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 250 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 Qgs (nC) 12 Qgd (nC) 39 Configuration • Repetitive Avalanche Rated 0.28 • Simple Drive Requirements

irfiz34g

Abstract: SiHFIZ34G SiHFIZ34G-E3
Contextual Info: IRFIZ34G, SiHFIZ34G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFP240

Abstract: irfp240pbf
Contextual Info: IRFP240, SiHFP240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.18 Qg (Max.) (nC) 70 Qgs (nC) 13 Qgd (nC) 39 Configuration Single D Available RoHS* COMPLIANT DESCRIPTION TO-247 Third generation Power MOSFETs from Vishay provide the

Roederstein Bipolar capacitor

Contextual Info: EKSU Vishay Roederstein Aluminum Capacitors Radial Style Non-Polar FEATURES • Non-polarized bi-polar aluminum electrolytic capacitor • Small size • High temperature range RoHS COMPLIANT APPLICATIONS • Circuits with changing or unknown polarity Component outlines

Contextual Info: EKB Vishay Roederstein Aluminum Capacitors Radial Style FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Radial leads, cylindrical aluminum case • Miniaturized, high CV-product per unit volume • Extended temperature range: 105 °C

CAT24C44VI-GT3

Abstract: CAT24C44 CAT24C44v 24c44
Contextual Info: CAT24C44 256-Bit Serial Nonvolatile CMOS Static RAM FEATURES • Single 5V Supply ■ JEDEC Standard Pinouts: –8-lead DIP –8-lead SOIC ■ Infinite EEPROM to RAM Recall ■ CMOS and TTL Compatible I/O ■ 100,000 Program/Erase Cycles EEPROM ■ Low CMOS Power Consumption: