24 MARKING TRANSISTOR Search Results

FLs marking code SOT23

Abstract: Q62702-F1066 Q62702-F977
Contextual Info: PNP Silicon High-Voltage Transistors BFN 25 BFN 27 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 24, BFN 26 NPN ● Type Marking

Q62702-F1065

Abstract: Q62702-F976
Contextual Info: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking

Magnetic Field Sensor FLC 100

Abstract: transistor ITT
Contextual Info: HAL628, HAL638 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Common Features: -• - switching offset compensation - operates from 4.5 V to 24 V supply voltage - overvoltage and reverse-voltage protection

itt ol 170

Contextual Info: HAL114 ADVANCE INFORMATION Hall Effect Sensor 1C in CMOS technology Marking Code Type Tern perature Rimge Features: A - operates from 4.5 V to 24 V supply voltage HAL114S HAL114UA - overvoltage and reverse-voltage protection 114A 114E 114C - short-circuit protected open-drain output switch

KLT23

Abstract: MC100ELT23
Contextual Info: MC100ELT23 5 V Dual Differential PECL to TTL Translator Description http://onsemi.com MARKING DIAGRAMS* 8 8 1 Features • • • • • • • • 3.5 ns Typical Propagation Delay 24 mA TTL Outputs Flow Through Pinouts The 100 Series Contains Temperature Compensation

ut 406 hall

Abstract: HAL800 can calibration protocol
Contextual Info: ADVANCE INFORMATION HAL800 Programmable Linear Hall Effect Sensor MICRONAS Edition Aug. 24, 1998 6251-441-1AI HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. Introduction Major Applications Features Marking Code

115c hall

Abstract: brushless dc motor speed control Hall 115C HAL115UA-E Hall-Effect-Sensor 115C 115E HAL115 IEC68-2-20 107 hall effect sensor
Contextual Info: MICRONAS INTERMETALL HAL115 Hall Effect Sensor IC MICRONAS Edition May 7, 1997 6251-414-1DS HAL115 Hall Effect Sensor IC in CMOS technology Marking Code Type Temperature Range Features: E C – operates from 4.3 to 24 V supply voltage with reverse voltage protection

Contextual Info: ADVANCE INFORMATION HAL114 Hall Effect Sensor IC MICRONAS Edition May 5, 1997 6251-456-1AI HAL114 Hall Effect Sensor IC in CMOS technology Features: ADVANCE INFORMATION Marking Code Type Temperature Range A E C 114A 114E 114C – operates from 4.5 V to 24 V supply voltage

ITT DIODE 125

Contextual Info: S ÏÏT Æ 1997 IT T • IN 4bô2711 0üübS7E TMb ■ T E R M E T A L L HAL115 Marking Code Hall Effect Sensor 1C in CMOS technology Temperati.ire Range Type Features: E C - operates from 4.3 to 24 V supply voltage with reverse voltage protection HAL 115UA

ELT25

Abstract: HLT25 HT25 KLT25 MC100ELT25 MC10ELT25
Contextual Info: MC10ELT25, MC100ELT25 −5 V Differential ECL to TTL Translator Description Features • • • MARKING DIAGRAMS* 8 8 1 SOIC−8 D SUFFIX CASE 751 1 8 8 2.6 ns Typical Propagation Delay 100 MHz FMAX CLK 24 mA TTL Outputs Flow Through Pinouts Operating Range: VCC = 4.5 V to 5.5 V with GND = 0 V;

MIEB100W1200TEH

Abstract: airconditioning inverter circuit 29-D2
Contextual Info: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin configuration see outlines. 20 D2

Contextual Info: MIEB100W1200TEH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 5 1 19 D5 T3 9 10 6 2 27 28 29 NTC T5 24 25 26 21 22 23 E72873 Pin coniguration see outlines. D2 20

Contextual Info: MC34271 Liquid Crystal Display and Backlight Integrated Controller 32 31 30 29 28 27 26 25 Sync RT Gnd VA Vref EN1 EN2 PIN CONNECTIONS AND MARKING DIAGRAM 1 DS1 DS2 24 2 Ref1 Ref2 23 3 FB1 FB2 22 4 Comp1 5 SS1 SS2 20 V1 V0 8 Drv1 V2 D2 18 V3 7 D1 V4 S2 19

Contextual Info: MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 D3 T1 1 19 T5 9 10 6 2 27 28 29 NTC 24 25 26 D2 20 3 D5 T3 5 D4 T2 4 21 22 23 E72873 Pin coniguration see outlines.

MIXA100W1200TEH

Abstract: IXYS DATE CODE
Contextual Info: MIXA100W1200TEH Six-Pack XPT IGBT VCES = 1200 V IC25 = 155 A VCE sat = 1.8 V Part name (Marking on product) MIXA100W1200TEH 16, 17, 18 30, 31, 32 D1 1 19 D3 T1 5 9 27 28 29 24 25 26 D2 3 T2 4 T5 10 6 2 NTC 20 D5 T3 21 22 23 D4 7 8 T4 E72873 Pin configuration see outlines.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital transistors built-in resistors DTC114EUA/DTC114ECA/ DTC114EKA/DTC114ESA DIGITAL TRANSISTOR (NPN) 1. 60¡ À 0 . 05 ( 3) DTC114EKA (SOT-323) 0. 95 (SOT-23-3L) 0. 4 ( 2) DTC114EUA 05 1. 52+0. ( 1)

BFR740L3

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
Contextual Info: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

BF861

Abstract: BF861A BF861B BF861C bf861 application
Contextual Info: BF861A; BF861B; BF861C N-channel junction FETs Rev. 04 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

BFR360L3

Abstract: BFR193L3
Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!

MMBT3960

Abstract: MMBT3960A MMBT4260 MMBT6543 MMBT4261 3D MARKING SOT-23 sot-23 Marking 3D 3D marking sot23 MMBC1009F1 MMBC1321Q2
Contextual Info: SURFACE MOUNT PRODUCTS — SOT 23 continued SOT-23 Transistors, VHF/UHF Amplifiers, Mixers, Oscillators P inout: 1-Base, 2 -E m itte r, 3 -C o lle c to r NPN 'T Device c ob Max (pF) Marking Min (GHz @ 'c (mA) v BR(CEO) 1T 15 3F 3E Q2 Q3 Q4 Q5 3B 3A F1 F2

BFR840L3RHESD

Abstract: Germanium Transistor LNA ku-band
Contextual Info: BFR840L3RHESD Robust Low Noise Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.2, 2013-04-09 RF & Protection Devices Edition 2013-04-09 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved.

FSW-112R-A

Contextual Info: INDUSTRIAL FLOW SWITCHES With No Moving Parts B FSW-118 1⁄2" NPT ߜ High/Low Alarm Indication for Air or Liquids ߜ Wide Range of Field Adjustable Settings ߜ High Reliability–No Moving Parts ߜ Compact, Integral Design ߜ Transistor or Relay Output

12705

Abstract: BCP52 BCX52 PBSS4160K PBSS5160K
Contextual Info: PBSS5160K 60 V, 1 A PNP low VCEsat BISS transistor Rev. 01 — 24 June 2004 Objective data sheet 1. Product profile 1.1 General description PNP low VCEsat (BISS) transistor in a SOT346 (SC-59) plastic package. NPN complement: PBSS4160K. 1.2 Features •

infineon marking L2

Abstract: BFR193L3
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!