23DBM Search Results

Contextual Info: HE385C/HEM385C/HES385C Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves Gain dB GAIN Features Frequency Range: 20～250MHz l Low Noise: 1.8dB(Typical) l 23dBm Typical 1dB Compression l Active Bias Design Supply Temperature Compensation

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER „ Single Power Supply 3.0V to 5.0V NC VCC1 NC 12 RF IN 2 Input Match 28dB Typical Small Signal Gain RF IN 3 10 RF OUT „ „ „ „ Power Detector Bias Circuit NC 4 9 NC 5 +23dBm, <4%EVM, 250mA at VCC =5.0V

Contextual Info: Surface Mount Frequency Mixer Level 23 LO Power +23dBm 400 to 2500 MHz Maximum Ratings Operating Temperature Features -45°C to 85°C Storage Temperature • • • • RoHS compliant very high IP3, 32 dBm typ. wideband, 400 to 2500 MHz excellent L-R isolation, 50 dB typ.

microwave MARCONI

Abstract: H40P NN12 P35-5123-000-200 MARCONI power
Contextual Info: P35-5123-000-200 HEMT MMIC DRIVER AMPLIFIER, 20 - 26GHz Features • • • 23dBm Output Power @ 24GHz 12dB Gain from 20 to 26GHz Small 2 x 1mm Die Size Description The P35-5123-000-200 is a high performance 20-26GHz Gallium Arsenide driver amplifier. When 0.3mm

Contextual Info: Frequency Mixer ZAY-1 Typical Performance Curves Conversion Loss vs. IF @ RF=250.1MHz Conversion Loss @ IF=30MHz 6.10 14 6.05 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 6.00 LO = +23dBm 5.95 5.90 10 5.85 9 5.80 8

Contextual Info: Frequency Mixer ZAY-2 Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=500.1MHz 15 7.00 6.95 LO = +20dBm 13 LO = +23dBm 12 LO = +26dBm LO = +23dBm Conversion Loss dB Conversion Loss (dB) 14 6.90 6.85 11 6.80 10 6.75 9 6.70

MGF0916A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

sige 5003L

Abstract: SE5003L SiGe 2527L 5003L SE5003L-EK1 SIGE SEMICONDUCTOR 2527l
Contextual Info: SE5003L 5 GHz, 23dBm Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE5003L is a 5GHz power amplifier offering high linear power for wireless LAN applications. The SE5003L incorporates a power detector for closed

SE5003L

Abstract: sige 5003L SE5003L-EK1 SE5003 2527L SE5003L-R SIGE SEMICONDUCTOR 2527l 5003L SIGE 2527l
Contextual Info: SE5003L 5 GHz, 23dBm Power Amplifier with Power Detector Preliminary Information Applications ƒ ƒ ƒ Product Description The SE5003L is a 5GHz power amplifier offering high linear power for wireless LAN applications. The SE5003L incorporates a power detector for closed

SCL 1058

Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

Transistor W03

Abstract: AN1465 START540 ultra low noise NPN transistor 30mils ultra linearity rf transistor
Contextual Info: AN1465 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START540 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 5mA Gain = 14.2dB, IP3out = 23dBm, NF = 1.4dB, RLin = 6dB, RLout = 14dB 1. INTRODUCTION. START540 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

Contextual Info: RF5112 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features  Single Power Supply 3.0V to 5.0V  +23dBm, <4%EVM, 250mA at VCC =5.0V  +21dBm, <4.0%EVM, 185mA atVCC =3.3V  28dB Typical Small Signal Gain  50 Input and Interstage Matching

Contextual Info: RF5125 3V TO 5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Features Single Power Supply 3.0V to 5.0V 28dB Typical Small Signal Gain  50 Input and Interstage Matching  2400MHz to 2500MHz Frequency Range  +23dBm, <4%EVM, 250mA at VCC =5.0V NC VC1 NC

Contextual Info: MAMX-009646-23DBML E-Series Surface Mount Mixer 2-2200 MHz M/A-COM Products Advanced - Rev. V1 Product Image Features • LO Power +23 dBm  Up to +23 dBm RF  Surface Mount  Tape and reel packaging available  260°C Reflow Compatible

Contextual Info: DRAFT RF3315 DRAFT RF3315Broadband High Linearity Amplifier BROADBAND HIGH LINEARITY AMPLIFIER GND RoHS Compliant & Pb-Free Product Package Style: SOT89 Features +40dBm Output IP3 „ 12.5dB Gain at 2.0GHz „ +23dBm P1dB „ „ 3.0dB Typical Noise Figure at

Contextual Info: Frequency Mixer ZFY-2+ Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=500.1MHz 14 8.0 7.8 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 7.6 LO = +23dBm 7.4 10 7.2 9 7.0 8 6.8 7 6.6

Contextual Info: Frequency Mixer ZFY-1 Typical Performance Curves Conversion Loss @ IF=30MHz Conversion Loss vs. IF @ RF=250.1MHz 14 6.5 6.4 LO = +20dBm 12 LO = +23dBm 11 LO = +26dBm Conversion Loss dB Conversion Loss (dB) 13 10 9 8 7 6.3 6.1 6.0 5.9 5.8 6 5.7 5 5.6 4 LO = +23dBm

Contextual Info: RF5755 3.3V, 2.4GHz 802.11b/g/n WLAN FRONT-END MODULE Features „ „ C_RX N/C BT 13 LNA VDD 1 Integrated 2.5GHz b/g/n Amplifier, LNA, SP3T Switch, and Power Detector Coupler Single Supply Voltage 3.0V to 4.8V POUT =20dBm, 11g, OFDM at <4% EVM, 23dBm 11b Meeting 11b Spectral Mask

MGF0915A

Abstract: SCL 1058
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

GP1200

Abstract: gctl
Contextual Info: GP1200 2.4 GHz Power Amplifier Preliminary Datasheet Product Description GP1200 is a high performance power amplifier designed for Bluetooth in the 2.4 GHz band. It is based on InGaP HBT technology and is available in a compact 6 lead LPCC plastic package. With 29dB gain and 23dBm P-1dB, the

M103

Abstract: M105 M107 2551N ACSP-2551 C3EX
Contextual Info: ACSP-2551 PADDED ZERO BIAS SCHOTTKYDETECTORS Frequency Range min Flatness vs. Frequency (max) Typical TSS Internal Attenuation Sensitivity (min) 0.01 – 18 0.5/octave -44 7 400 GHz ±dB dBm dB mV/mW NOTES: Maximum input power: +23dBm Sensitivity is measured into an open circuit load (>10k ohm).

M103

Abstract: M105 M107
Contextual Info: ACSP-2521 PADDED ZERO BIAS SCHOTTKYDETECTORS Frequency Range min Flatness vs. Frequency (max) Typical TSS Internal Attenuation Sensitivity (min) 5 – 18 0.5/octave -44 6 500 GHz ±dB dBm dB mV/mW NOTES: Maximum input power: +23dBm Sensitivity is measured into an open circuit load (>10k ohm).

"RF Connector"

Abstract: SCT2000 1800mhz rf frequency power amplifier circuit AN1352 START420 amplifier rf 18dbm gain 18db 60OHM w03 TRANSISTOR
Contextual Info: AN1352 APPLICATION NOTE A LNA OPTIMIZED FOR HIGH IP3out AT 1.9GHz USING THE NPN Si START420 TRANSISTOR F. Caramagno - G. Privitera Data at 1.9GHz 3V, 20mA Gain = 18dB, IP3out = 23dBm, N F = 1.9dB, RLin/out > 13dB 1. INTRODUCTION. START420 is a product of the START Family (ST Advanced Radio frequency Transistor). It is a high

60Ghz

Abstract: MGF0915A a4013
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm