GP1200 Search Results

Contextual Info: GP1200FSS16S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Supersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 December 1998 TYPICAL KEY PARAMETERS VCES 1600V V CE sat , 3.5V APPLICATIONS • High Pow er Sw itching. ■ M otor C ontrol. ■

GP1200

Abstract: gctl
Contextual Info: GP1200 2.4 GHz Power Amplifier Preliminary Datasheet Product Description GP1200 is a high performance power amplifier designed for Bluetooth in the 2.4 GHz band. It is based on InGaP HBT technology and is available in a compact 6 lead LPCC plastic package. With 29dB gain and 23dBm P-1dB, the

Contextual Info: JULY 1996 GP1200FSS16S ADVANCE ENGINEERING DATA DS4336-4.2 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1600V VCES 3.3V VCE sat 1200A IC(CONT) 2400A IC(PK) 270ns tr 590ns tf • High Power Switching. ■ Motor Control.

Contextual Info: Si GEC P L ES SE Y NOVEMBERS SEMI CO NDUC TOR S ADVANCE INFORMATION DS4336-5.8 GP1200FSS16S POWERLINE N-CHANNEL IGBT MODULE TYPICAL KEY PARAMETERS VCES 1600V V C E ,sat, 3.5V APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. 'cco nt 1200A

Contextual Info: JULY 1996 GP1200FSS12S ADVANCE ENGINEERING DATA DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNEL IGBT MODULE APPLICATIONS TYPICAL KEY PARAMETERS 1200V VCES 2.8V VCE sat 1200A IC(CONT) 2400A IC(PK) 190ns tr 840ns tf • High Power Switching. ■ Motor Control.

AN4502

Abstract: AN4503 GP1200ESM33 DS5308-1
Contextual Info: GP1200ESM33 GP1200ESM33 High Reliability Single Switch IGBT Module Advance Information Replaces July 2000 version, DS5308-1.6 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5308-2.1 February 2001

Contextual Info: GP1600FSS12-ABC GP1600FSS12-ABC Powerline N-Channel IGBT Module Advance Information DS5173-1.2 May 1999 The GP1200FSS12-ABC is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power

Contextual Info: GP1200FSS16S M M ITEL Powerline N-Channel IGBT Module S E M IC O N D U C T O R S upersedes March 1998 version, DS4336 - 5.9 DS4336 - 6.0 Decem ber 1998 TYPICAL KEY PARAMETERS VCES 1600V VCE sa„ 3.5V APPLICATIONS • High Power Switching. ■ Motor Control.

GP1200FSS12S

Contextual Info: GP1200FSS12S M ITEL Powerline N-Channel IGBT Module SEMICONDUCTOR Advance Inform ation Supersedes July 1996 version, DS4547 -1 .2 DS4547 -1 .3 TYPICAL KEY PARAMETERS 1200V CES 2.8V ^CE sat 1200A C(CONT) 2400A C(PK) 190ns 840ns APPLICATIONS • High Power Switching.

Contextual Info: Si G E C P L E S S E Y S E M I C O N D U C T O R S DS4547-1.2 GP1200FSS12S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS VCES 1200V 2.8V CE sai APPLICATIONS • High Power Switching. ■ Motor Control. 1200A ^C(COhfT) ■ UPS. 2400A 190ns 840ns C(PK)

AN4503

Abstract: AN4502 AN4505 AN4506 GP1200FSM18 AN5000
Contextual Info: GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 1200A Per Module KEY PARAMETERS VCES typ VCE(sat)

AN4503

Abstract: AN4502 AN4505 GP1200FSS18
Contextual Info: GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1200A Per Module DS5260-3.1 January 2001 KEY PARAMETERS

P135H

Contextual Info: 表压压力变送器（HMGP型） 页码，1/3 表压压力 压压力变送器（HMGP 送器（HMGP型） HMGP型） 技术指标 使用对象：液体气体或蒸汽 测量范围：0～0.25Kpa至0～40MPa 输 出：0～20mADC 电 源：24VDC, 无负载变送器可在12VDC工作

GP1200

Abstract: sst 90 JEP95 SST12LP00 SST12LP00-QV6E
Contextual Info: 2.4 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • Single 3.3V Supply • Small Signal Gain: – Typically 29 dB • 23 dBm P-1dB Output • High PAE = 50% at P-1dB • Low idle current

Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications

GP1250

Abstract: GP118 GP1120 GP1150 GP1180 GP1200 1fl7 GP112 gp125 GP140
Contextual Info: DIOTEC ELECTRONICS CORP EÖMTID? DGÜQ177 =lfl7 • DIX SflE J> Data Sheet No.: HVGP-1000-A DIO TEC ELEC T R O N IC S CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 '" P O V V HIGH V O LTA G E D IO D E R E C T IF IE R S

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

JEP95

Abstract: SST12LP00 SST12LP00-QV6E
Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 EOL Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications

bcm 4330

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Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

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Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

GP1250

Abstract: GP140 d1tj GP1120 GP1150 GP1180 GP1200 diode Rectifiers
Contextual Info: DIOTEC ELECTRONICS CORP SflE J> WÊ EBMTIO? DDÜG177 =107 « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 d Data Sheet No.: HVGP-1000-A q \ - \ I 1 ' HIGH VOLTAGE DIODE RECTIFIERS FEATURES

JEP95

Abstract: SST12LP00 SST12LP00-QV6E schematic diagram bluetooth dongle
Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 Preliminary Specifications SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB

Contextual Info: 2.4-2.5 GHz Power Amplifier SST12LP00 Data Sheet SST12LP002.4 GHz Power Amplifier FEATURES: APPLICATIONS: • High Gain: – Typically 28 dB gain across 2.4– 2.5 GHz over temperatures 0– 85°C • High linear output power: – >24 dBm P1dB • High power-added efficiency/low operating current for Bluetooth applications