237 THOMSON Search Results

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

T74LS266B1

Contextual Info: S G S-THOMSON Ü 7 E D I 7^2^237 QDlti2Lil 5 J LOW POWER SCHOTTKY INTEGRATED CIRCUITS Ai - 67C16390 T54LS266 T74LS266 Ì T -tz -tS D QUAD 2-INPUT EXCLUSIVE NOR GATE DESCRIPTION The T54LS266/T74LS266 Is a high speed QUAD

STF8045AV

Contextual Info: 3DE D • 7^237 QG3D512 ô SGS-THOMSON STF8045AF STF8045AV S G S-THOMSON NPN DARLINGTON POWER MODULE EASY TO DRIVE TECHNOLOGY ETD ■ HIGH CURRENT POWER BIPOLAR . MODULE VERY LOW Rth JUNCTION CASE . SPECIFIED ACCIDENTAL OVERLOAD AREAS ■ ISOLATED CASE (2500V RMS)

Contextual Info: • 7^ 5^237 ODB^m ? ^ ■ H " '3 3 ~ S _ SGS-THOMSON 2N6674 ML[lo @iOOi_2N6675 S G S-THOMSON 30E D NPN HIGH VOLTAGE POWER TRANSISTORS ■ ■ ■ ■ ■ SWITCHING REGULATORS INVERTERS SOLENOID AND RELAY DRIVERS MOTOR CONTROLS DEFLECTION CIRCUITS

TDA9102B

Abstract: TDA9102C DIP20 pulse generator 30hz
Contextual Info: 42E D 7*12^237 Q034Ö20 b IS6TH TDA9102B TDA9102C SGS-THOMSON m S 6 S-THOMSON • T - 77 -0 7 -0 5 HA/ PROCESSOR FOR TTL V.D.U PRELIMINARY DATA HORIZONTAL SECTION • SYNCHRONIZATION INPUT : TTL COM­ PATIBLE, NEGATIVE EDGE TRIGGERED' ■SYNCHRONIZATION INDEPENDENT FROM

Diode D7E

Abstract: sef220 SEF221
Contextual Info: 7^237 S G S-THOMSON D7E D 73C 17474 D 7^ 3 9 -/3 SEF220 SEF221 SEF222 SEF223 '•-i ?\ \\\ N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.

STF6045DV

Abstract: BD405 transistor b 1185 BD 149 transistor
Contextual Info: 3QE D £ v • 7^237 SGS-THOMSON iHiOTMKS DG30SDb B T -33^ S STF6045DF STF6045DV S G S-THOMSON NPN DARLINGTON POWER MODULE ■ ■ ■ ■ . . . . EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

BTW69-200N

Abstract: scr 122 btw69200n 69200N LT 7237 SCR 1989
Contextual Info: 3ÜE D • 7^237 00314G2 b 'T-zs-n SCS-THOMSON IMiOraOiDOi BTW69-200N -> 1200N s G S-THOMSON THYRISTORS ■ ■ ■ ■ ■ GLASS PASSIVATED CHIP HIGH STABILITY AND RELIABILITY HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT EASY MOUNTING ON HEATSINK DESCRIPTION

BUF460AF

Abstract: SC04840 BUF460AV ETD 41 035 pin diagram of ic 1496 JF460AF
Contextual Info: 3DE D • 7=12^237 QQ3Q35b =1 ■ SGS-THOMSON s 6 s-thomson JF460AF ^ 7# OSOieiamiCTR »!« BUF460AV r - 3 3 '1 s NPN TRANSISTOR POWER MODULE . . . ■ EASY TO DRIVE TECHNOLOGY ETD HIGH CURRENT POWER BIPOLAR MODULE VERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL

breakover device

Abstract: THBT200D THBT SGS-Thomson thbt
Contextual Info: 3GE D KB ? clEtì 237 ÜÜ35DS0 fi • Æ T SCS-TMOMSON ' T : ?Z-( s G S-THOMSON THBT 200 D TRISIL DESCRIPTIO N This protection device has been especially designed for subscriber line-card and terminal protection. By itself, it enables to protect integrated SLIC against

Contextual Info: m BOE D " T 7^ l'\S 7^2^237 QG3D'^S T • BFX89 BFY90 SGS-THOMSON tLiOTOOiOOS S-THOMSON WIDE BAND VHF/UHF AMPLIFIER a SILICON PLANAR EPITAXIAL TRANSISTORS ■ TO-72 METAL CASE ■ VERY LOW NOISE APPLICATIONS : ■ TELECOMMUNICATIONS ■ WIDE BAND UHF AMPLIFIER

Contextual Info: 3DE » • 7^237 □QBÜ'iaS S ■ T i• V°| / r : SCS-THOM SON ^_ 7# 5 C L l ^ g « S _ B C 3 9 4 S G S-THOMSON HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon planar epitaxial NPN trans­

Contextual Info: 7^2^237 0045434 725 • SGTH SGS-THOMSON MK5027 SS7 SIGNALLING LINK CONTROLLER ■ CMOS ■ FULLY COMPATIBLE WITH BOTH 8 OR 16 BIT SYSTEMS ■ SYSTEM CLOCK RATE TO 10MHz ■ DATA RATE UP TO 2.5Mbps FOR SS7 PROTO­ COL PROCESSING , 7Mbps FOR TRANSPAR­ ENT HDLC MODE

200B

Abstract: 400B 600B 700B 800B BTB24
Contextual Info: 30E D • 7^237 DQ3175b ö SGS-THOMSON "T -Z S -1 7 BTB 24 B S G S-THOMSON TRIACS GLASS PASSIVATED CHIP Igt SPECIFIED IN FOUR QUADRANTS DESCRIPTIO N New range suited for applications such as phase control and static switching. ABSO LU TE RATINGS limiting values

Contextual Info: .152^237 ooaTabi a • " IT - 3 3 - 1 3 SCS-THOMSON RfflDOœHLIÛTri^OKlDOi S G S-THOMSON 2N5875-2N5876 2N5877-2N5878 3DE D SILICON HIGH POWER TRANSISTORS D ESCRIPTIO N The 2N5877 and 2N5878 are silicon epitaxial-base NPN power transistors in Jedec TO-3 metal case.

ST5420

Abstract: ST5451 br b2d
Contextual Info: • 7^2^237 0D4S212 2TT ■S6TH _ SGS-THOMSON ST5420 SID-iiW : S/T INTERFACE DEVICE WITH MICROWIRE/DSI ADVA N C E DATA As specified in I.430, full-duplex transmission at 192kb/s is provided on separate transmit and receive twisted wire pairs using inverted Alternate Mark In­

Crystal Oscillator 12MHz

Abstract: Z86E21 xtal 12MHz 12MHZ program for uart Xtal 8Mhz crystal
Contextual Info: 7^2^237 rzT DG2bfl37 S SGS-THOMSON ^7# 5 _ Z86E21 S G S- T HOMSON 30E D 8K EPROM MICROCOMPUTERS • COMPLETE MICROCOMPUTER, 8K BYTES OF EPROM 240 BYTES OF RAM 32 I/O LINES, AND UP TO 56K BYTES ADDRESSABLE EX­ TERNAL SPACE EACH FOR PROGRAM AND

stk audio power amplifiers

Abstract: D556 stk 013
Contextual Info: ¿57 7=12^237 G G H b llG • S G T H _ SGS-THOMSON ¡OJOTO «! STK18N05 STK18N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RdS oii Id STK18N05 50 V < 0.085 a 18 A STK18N06 60 V < 0.085 £2 18 A ■ . ■ ■

2N3964

Abstract: 2N3963 2N3965 3964-2N 2N3962 3963-2N
Contextual Info: 3GE D • 7^237 DÜ311TS S ■ _ f Z 7 SCS-THOM SON ^T # ¡ ^ V l > \ ~ \ ù[ 2N3962/2N3963 2N3964/2N3965 S G S-THOMSON LOW NOISE, LOW LEVEL AMPLIFIERS DESCRIPTION The 2N3962, 2N3963, 2N3964 and 2N3965 are si­ licon planar epitaxial PNP transistors in Jedec

UL02003

Abstract: ulq2003 ULQ2001R ULQ2002R ULQ2003R ULQ2004R T432 72kn T-43-25
Contextual Info: 7^2^237 D022472 M • ¡ " T ;ttV'L5> SGS-THOMSON ULQ2001R/2R _ ULQ2003R/4R S G S-THOMSON 3DE D SEVEN DARLINGTON ARRAYS ■ SEVEN DARLINGTONS PER PACKAGE ■ OUTPUT CURRENT 500 mA PER DRIVER 600 mA PEAK ■ OUTPUT VOLTAGE 50 V ■ INTEGRAL SUPPRESSION DIODES FOR IN­

tda7374

Abstract: TDA 7374 V ap 7302 b transistor ap 7302 b
Contextual Info: M2E 7=12^237 » Q03bb42 s SCS-THOMSON 7 BISÛTH G S - TH OM SO N TDA7374 ¡y ~ 7 # -0 S -0 \ DUAL BRIDGE AUDIO AMPLIFIER FOR CAR RADIO ' ; ADVANCE DATA • MINIMUM EXTERNAL COMPONENT COUNT ■ NO BOOTSTRAP CAPACITORS a NO BOUCHEROT CELLS ■ CLIP DETECTOR OUTPUT

Contextual Info: 3QE D 7^237 0031101 3 T ' Z \ - \ 1 Gl SCS-THOMSON 2N930 me S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N930 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case, designed for use in high performance, low-level, low-noise am­

Contextual Info: 7*^237 ¡üi DOMbSES SRñ • SGTH SCS-THOMSON STP55N05L STP55N05LFI ilL IO T «! N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP55N05L STP55N05LFI V dss R dS OTI Id 50 V 50 V < 0.023 n < 0.023 £2 55 A 30 A . TYPICAL RDS(on) = 0.02 Q.

Contextual Info: un 7^5^237 0020741 2 • SGS-THOMSON [»[H ] »gC T(g«S 13 BUV46/FI BUV46A/AFI S G S-TH0MS0N 3QE ]> HIGH VOLTAGE POWER SWITCH DESCRIPTION The BUV46/A and BUV46FI/AFI are silicon multiepitaxial mesa NPN transistors in the jedecTO-220 plastic package and ISOWATT22C fully isolated