22JUN200 Search Results

RAM IC

Contextual Info: 4 THIS DRAWING 7 IS COPYRIGHT 3 UNPUBLISHED. 19 RELEASED BY A MP INCORPORATED. FOR ALL PUBLICATION RIGHTS 2 ,19 LOC RESERVED. DIST CE REVISIONS 6 DESCRIPTION LTR REVISED PER 0UB0-0301-01 DATE DWN A P VD 22JUN200’ TA 5 B D D C C M8 X o CO XT m o un TWO

l7912

Contextual Info: L79xxAC 2 % negative voltage regulators Features • Output current to 1.5 A ■ Output voltages of -5; -12; -15 V ■ Thermal overload protection ■ Short circuit protection ■ Output transition SOA protection Description TO-220 D²PAK The L79xxAC series of three-terminal negative

10n62k3

Abstract: STF10N62K3 STI10N62K3 STF10N62K3 ST 10N6 10n62
Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 3.8 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3

M29W320DT

Abstract: M29W320D M29W320DB TFBGA48
Contextual Info: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns

QFN16L

Abstract: ST2349A ST2349AQTR
Contextual Info: ST2349A 4-bit dual supply level translator without direction control pin Features • 18 Mbps max data rate when driven by a totem pole driver ■ 6.8 Mbps (max) data rate when driven by an open drain pole driver ■ Bi-directional level translation without

JESD97

Abstract: L50NH3LL STL50NH3LL
Contextual Info: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■

l7905ct

Abstract: L7912C L7905 L7800 L7900 L7905C L7906C L7908C L7915CV l7924
Contextual Info: L7900 series Negative voltage regulators Feature summary • Output current up to 1.5A ■ Output voltages of -5; -6; -8; -12; -15; -18; -20; -24V ■ Thermal overload protection ■ Short circuit protection ■ Output transition SOA protection TO-220 TO-220FP

JESD97

Abstract: L100NH3LL STL100NH3LL
Contextual Info: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)

ST2329AQTRQTR

Abstract: QFN10 ST2329A QFN-10
Contextual Info: ST2329A 2-bit dual supply level translator without direction control pin Features • 18 Mbps max. data rate when driven by a totem pole driver ■ 6.8 Mbps (max.) data rate when driven by an open drain pole driver ■ Bidirectional level translation without

do-41 footprint

Abstract: marking U12 u12 smb JESD97 STTH112 STTH112A STTH112RL STTH112U ST U12 smb ST U12 sma
Contextual Info: STTH112 High voltage ultrafast rectifier Main product characteristics IF AV 1A VRRM 1200 V Tj (max) 175° C VF (max) 1.65 V Features and benefits DO-41 STTH112 • Low forwarded voltage drop ■ High reliability ■ High surge current capability ■ Soft switching for reduced EMI disturbances

LSI 9240

Abstract: WD1600JS 9690SA-414E 9590SE-4ME bbu 9500 installation ST3750640AS WD1600JS-22NCB1 3ware 9500s bbu installation 9650SE-4 3dm 5000
Contextual Info: Command Line Interface Version 10.0—Supports the 9750 and 9000 Series 9750, 9690SA, and 9650SE PN: 45413-00, Rev. A November 2009 CLI Guide 3ware SATA+SAS RAID Controller Card Document Description Document 45413-00, Rev. A. November 2009. This document will remain the official reference source for all revisions and

seagate hard disks st373455ss

Abstract: seagate hard disk 2000 gb 2tb bbu 9500 installation ST3750640AS seagate 123-GB hard disk 1TB CIRCUIT 9500S ST373455 9650SE-16ML
Contextual Info: Command Line Interface Version 10.2 – Supports the 9750, 9690SA, and 9650SE Models PN: 45413-00, Rev. A May 2010 CLI Guide 3ware SATA+SAS RAID Controller Card Document Description Document 45413-01, Rev. A. May 2010. This document will remain the official reference source for all revisions and

284158-1

Abstract: BARBER FTEC174 284159-2
Contextual Info: Packaging Specification 107-20215 Rev. B Description SPECIFICA DI CONFEZIONAMENTO 6+6 POS. 070/JPT REC. HOUSING 1 SCOPO La presente specifica riguarda i materiali ed il metodo di imballo da utilizzare per il confezionamento dei KIT P/Ns : 284159-1 284159-2 284159-3 284159-4 284159-5

10N62K3

Contextual Info: STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS on max Pw ID 3 STF10N62K3 STFI10N62K3 STI10N62K3

Contextual Info: VNQ5E050K-E Quad channel high side driver for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max on-state resistance per ch. RON Current limitation (typ) ILIMH 27 A Off-state supply current IS

A65A

Contextual Info: LMH6642/6643/6644 3V, Low Power, 130MHz, 75mA Rail-to-Rail Output Amplifiers General Description The LMH664X family true single supply voltage feedback amplifiers offer high speed 130MHz , low distortion (−62dBc), and exceptionally high output current (approximately 75mA) at low cost and with reduced power consumption when compared against existing devices with similar

STM32F103VC

Abstract: STM32F103RC STM32F103xE STM32F10* I2C errata 548-72 STM32F103ZD USART STM32F101RC STM32F101RD stm32f103ve errata
Contextual Info: STM32F101xC/D/E and STM32F103xC/D/E Errata sheet STM32F101xC/D/E and STM32F103xC/D/E high-density device limitations Silicon identification This errata sheet applies to the revisions Z and Y of the STMicroelectronics STM32F101xC/D/E access line and STM32F103xC/D/E performance line high-density

FB300

Abstract: M50FW080 PLCC32 TSOP32
Contextual Info: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)

M29F016D

Contextual Info: M29F016D 16 Mbit 2Mb x8, Uniform Block 5V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 5V ±10% for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55, 70, 90ns ■ PROGRAMMING TIME – 10µs per Byte typical

Contextual Info: ADS5463 ADS54RF63 AD S5 463 www.ti.com . SLAS515E – NOVEMBER 2006 – REVISED JULY 2009 12-Bit, 500-/550-MSPS Analog-to-Digital Converters

138f

Abstract: M32R transistor manual substitution FREE DOWNLOAD renesas product naming rule B0435 d9423 HFC0100 M32RLIB H1356
Contextual Info: M3T-CC32R V.4.20 Cross Tool Kit for M32R Family User’s Manual <Assembler> Rev. 1.01 November 16, 2003 REJ10J0384-0100Z l Microsoft, MS-DOS, Windows, and Windows NT are registered trademarks of Microsoft Corporation in the U.S. and other countries. l Sun, Java and all Java-based trademarks and logos are trademarks or registered trademarks of Sun Microsystems, Inc. in the U.S. or

ISD12A

Abstract: JESD97 S12NH3LL STS12NH3LL
Contextual Info: STS12NH3LL N-channel 30V - 0.008Ω - 12A - SO-8 Ultra low gate charge STripFET Power MOSFET Features Type VDSS RDS on ID STS12NH3LL 30V <0.0105Ω 12A • Optimal RDS(on) x Qg trade-off @ 4.5V ■ Switching losses reduced ■ Low input capacitance ■

stm32f103z

Abstract: STM32F103VC STMICROELECTRONICS TOP making STM32F101VD STM32F103RC stm32f103vd STM32F103Ve STM32F103xE STM32F101RC ARM Cortex core
Contextual Info: STM32F101xC/D/E and STM32F103xC/D/E Errata sheet STM32F101xC/D/E and STM32F103xC/D/E revision Z high-density device limitations Silicon identification This errata sheet applies to the revision Z of the STMicroelectronics STM32F101xC/D/E access line and STM32F103xC/D/E performance line high-density products. These families

block diagram for RF transmitter AND RECEIVER doc

Abstract: BPSK ST19NR66 AES-128 iso 3309 eeprom st
Contextual Info: ST19NR66 Dual contactless smartcard MCU with 66 Kbytes high density EEPROM, enhanced RF performances and dedicated packages Features Hardware features • Enhanced 8-bit CPU core with extended addressing modes ■ 224 Kbytes User ROM ■ 6 Kbytes User RAM