220FN Search Results

T220AB

Abstract: PRSS0003AA-A PRSS0003AA-B PRSS0004AA-A PRSS0004AB-A PRSS0004AD-A PRSS0003AB-A TO-220FN
Contextual Info: Magazine code T0-220S Magazine material Package name Renesas code Previous code PVC TO-220 PRSS0004AA-A T220AB Polyvinyl chloride TO-220F PRSS0003AA-A T220F TO-220F (2) PRSS0003AA-B T220F(2) TO-220FN PRSS0003AB-A 220FN TO-220C PRSS0004AD-A T220C TO-220S

RJK6014DPP

Abstract: RJK6014DPP-00-T2
Contextual Info: RJK6014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1531-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

RJK5012DPP

Abstract: RJK5012DPP-00-T2
Contextual Info: RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1545-0100 Rev.1.00 May 10, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

RDN050N20

Contextual Info: RDN050N20 Transistors 10V Drive Nch MOS FET RDN050N20 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

RDN120N25

Contextual Info: RDN120N25 Transistors 10V Drive Nch MOS FET RDN120N25 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TO-220FN 4.5 φ3.2 2.8 1.2 1.3 14.0 5.0 8.0 15.0 zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity.

SB1335A

Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
Contextual Info: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

2SB1674

Abstract: 2SD2615
Contextual Info: 2SD2615 Transistors For Motor / Relay drive 120V, 6A 2SD2615 zStructure NPN Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection , high hFE.

2SB1668

Abstract: 2SD2607
Contextual Info: 2SB1668 Transistors For Power amplification −100V, −8A 2SB1668 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) High hFE by darlington connection.

RDN100N20

Contextual Info: RDN100N20 Transistors Switching 200V, 10A RDN100N20 !External dimensions (Unit : mm) TO-220FN 4.5 +0.3 −0.1 10.0 +0.3 −0.1 5.0±0.2 8.0±0.2 15.0 +0.4 −0.2 14.0±0.5 !Application Switching 1.2 +0.2 2.8 −0.1 3.2±0.2 12.0±0.2 !Features 1) Low on-resistance.

Contextual Info: FS20KM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0257-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS ON (max) : 0.19 Ω ID : 20 A Outline TO-220FN 2 1. Gate 2. Drain 3. Source 1 1 2 3 3 Applications PDP, lamp ballast, DC-DC converters

RJK5014DPP

Abstract: RJK5014DPP-00-T2
Contextual Info: RJK5014DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G1530-0100 Rev.1.00 Apr 17, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

2SB1566

Abstract: 2SD2395 TO220FN
Contextual Info: 2SB1566 Transistors For Power Amplification −60V, −3A 2SB1566 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Wide SOA. 12.0 10.0 0.8

TO-220FN

Contextual Info: Magazine 220FN code Magazine PVC material Polyvinyl chloride Package name Renesas code TO-220FN PRSS0003AB-A Previous code 220FN Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box

2sa2005

Abstract: 2SC5511 transistor 160v 1.5a pnp velosity
Contextual Info: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation −160V, −1.5A 2SA2005 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.

Contextual Info: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.

RDN080N25

Contextual Info: RDN080N25 Transistors Switching 250V, 8A RDN080N25 zExternal dimensions (Units : mm) TO-220FN 4.5 +0.3 −0.1 10.0 +0.3 −0.1 5.0±0.2 8.0±0.2 15.0 +0.4 −0.2 14.0±0.5 zApplication Switching 1.2 +0.2 2.8 −0.1 3.2±0.2 12.0±0.2 zFeatures 1) Low on-resistance.

RDN100N20

Contextual Info: RDN100N20 Transistors Switching 200V, 10A RDN100N20 !External dimensions (Unit : mm) TO-220FN 4.5 +0.3 −0.1 10.0 +0.3 −0.1 5.0±0.2 8.0±0.2 15.0 +0.4 −0.2 14.0±0.5 !Application Switching 1.2 +0.2 2.8 −0.1 3.2±0.2 12.0±0.2 !Features 1) Low on-resistance.

RJK4007DPP

Abstract: RJK4007DPP-00-T2
Contextual Info: RJK4007DPP Silicon N Channel MOS FET High Speed Power Switching REJ03G0581-0200 Rev.2.00 Jan 05, 2009 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A Package name: TO-220FN D 1. Gate

CT40km

Abstract: CT40KM-8H trigger speed control
Contextual Info: CT40KM-8H Nch IGBT for Strobe Flasher REJ03G0286-0100 Product under development Rev.1.00 Aug.20.2004 Features • VCES : 400 V • TO-220FN package • High Speed Switching Outline TO-220FN 2 1 : Gate 2 : Collector 3 : Emitter 1 1 2 3 3 Applications Strobe flashers

2SD2399

Abstract: 2SD 438
Contextual Info: 2SD2399 Transistor, NPN, Darlington Features Dimensions Units : mm • available in TO-220FN package • Darlington connection provides high dc current gain (hFE) • • • • 2SD2399 (TO-220FN) damper diode is incorporated built-in resistors between base and

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

2SB1674

Abstract: 2SD2615
Contextual Info: 2SB1674 Transistors For Motor / Relay drive −120V, −6A 2SB1674 zStructure PNP Silicon Epitaxial Planar Transistor (Darlington connection) zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 15.0 1.2 1.3 14.0 5.0 zFeatures 1) Darlington connection, high hFE.

Contextual Info: MITSUBISHI Neh POWER MOSFET FS10KMA-4A HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 TO-220FN APPLICATION Cs Sw itch for CRT D isplay m onitor, Sw itch mode power supply, etc. MAXIMUM RATINGS Symbol Tc = 2 5°C Ratings

Contextual Info: Transistors hFE rankings codes hFE rankings codes FThe hFE values of ROHM transistors are classified as shown below, and the hFE code is marked on each product. The hFE of the TO-220FP and TO-220FN are classified as shown below, and the hFE code is marked on each product.