220D Search Results

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

Contextual Info: Panasonic S chottky B arrier D iodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply I Features T O -220D p ack ag e I f (AV)= 5 A rectification p o ssib le V r = 100V guaranteed S in g le type Absolute Maximum Ratings (Ta=25°C)

28f1000

Abstract: M-Systems pcmcia pcm210 fdd power connector tffs PCM-211 EMM386 pcmcia ethernet TRUEFFS EPROM M-Systems
Contextual Info: PCM-3110C/3112 PCM-220D1 User Manual P/N: 2006311001 Copyright Notice This document is copyrighted, 1997. All rights are reserved. The original manufacturer reserves the right to make improvements to the products described in this manual at any time without notice.

Contextual Info: Fast Recovery Diodes FRD MA3D690 (MA6D90) Silicon planar type Unit: mm For high-frequency rectification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip +0 1.5 −0.4 • Low forward voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown

MA3D756

Abstract: MA7D56
Contextual Info: Schottky Barrier Diodes SBD MA3D756 (MA7D56) Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV

MA3D690

Abstract: MA6D90
Contextual Info: Fast Recovery Diodes FRD MA3D690 (MA6D90) Silicon planar type Unit : mm For high-frequency rectification 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 13.7±0.2 4.2±0.2 Solder Dip +0 1.5-0.4 • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown

MA10799

Abstract: MA3D799
Contextual Info: Schottky Barrier Diodes SBD MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 4.6 ± 0.2 9.9 ± 0.3 3.0 ± 0.5 15.0 ± 0.5 • Features φ 3.2 ± 0.1 1.4 ± 0.2 13.7 ± 0.2 4.2 ± 0.2 • TO-220D package

MA3D756

Contextual Info: Schottky Barrier Diodes SBD MA3D756 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 • Low forward rise voltage VF • TO-220D (Full-pack package) with high dielectric breakdown voltage > 5.0 kV

MA2D760

Contextual Info: Schottky Barrier Diodes SBD MA2D760 Silicon epitaxial planar type Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 • Features +0 1.5 − 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • TO-220D Package •Allowing to rectify under (IF(AV) = 5 A) condition

Contextual Info: Extract from the online catalog PLC-OSC-220DC/300DC/ 1 Order No.: 2980704 The illustration shows the version PLC-OSC-24DC/300DC/1 PLC relay, integrated optocoupler, with screw connection, for

220DC

Abstract: 19V-6
Contextual Info: Extract from the online catalog ST-OV3-110DC/220DC/1 Order No.: 2903189 The illustration shows version ST-OV 3- 5 DC/220 DC/1 Pluggable power optocoupler, with light indicator and protection

Contextual Info: Extract from the online catalog EMG 10-OE-220DC/ 48DC/100 Order No.: 2948937 The illustration shows version EMG 10-OE, with DC voltage output, max.100 mA Input optocoupler, with light indicator and protection circuits in the

Contextual Info: Extract from the online catalog ST-OV3- 24DC/220DC/1 Order No.: 2903202 The illustration shows version ST-OV 3- 5 DC/220 DC/1 Pluggable power optocoupler, with light indicator and protection

MA6D50

Contextual Info: MA111 Fast Recovery Diodes FRD MA6D50 Silicon planer type (cathode common) Unit : mm For high-frequency rectification 4.6±0.2 9.9±0.3 2.9±0.2 3.0±0.5 • Features Low forward voltage V F ● Fast reverse recovery time trr ● TO-220D (full-pack package) with high dielectric strength > 5.0kV

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Appli­ cation VcBO VcEO (V) (V) lc VcE (A) (V) (sai) Package (No.) lc (A) Ib tf (i*s) MT3 (D43) (mA) MT4 (D46) TO r 0 -220(a) T 0 2 2 0 E T0-220D N T ype

Contextual Info: 1. Mechanical Dimensions: 2. S c h e m a t i c : O - 0 .9 0 0 Max o- 0 .0 3 2 Typ 1.00 Min 3. E l e c t r i c a l S p e c ific atio n s: In d u c ta n c e : 220D uH ±10% Rated C u rre n t: 0 .5 0 0 A d c S a tu ra tio n I.O K H z , 1.0V 40*C T e m p Rise

Contextual Info: Panasonic Schottk y Barrier Diodes SBD MA10798 Silicon epitaxial planer type (cathode co m m on ) U nit : mm For switching power supply 4 .6 + 0 .2 , 9 .9 + 0 .3 . I Features ► TO-220D package 0 3 . 2 + 0.1 > I f (a v ) = 2 0 A rectification possible ►

ma3df30

Abstract: MA3Df3
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode

MA3D689

Abstract: MA6D89 c406
Contextual Info: Fast Recovery Diodes FRD MA3D689 (MA6D89) Silicon planar type Unit : mm 4.6 ± 0.2 9.9 ± 0.3 +0 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown

MA3D653

Abstract: MA6D53
Contextual Info: Fast Recovery Diodes FRD MA3D653 (MA6D53) Silicon planar type (cathode common) Unit : mm For high-frequency rectification 4.6 ± 0.2 9.9 ± 0.3 3.0 ± 0.5 • Features 15.0 ± 0.5 • Low forward rise voltage VF • Fast reverse recovery time trr • TO-220D (Full-pack package) with high dielectric breakdown

MA2D755

Contextual Info: Schottky Barrier Diodes SBD MA2D755 Silicon epitaxial planar type Unit : mm For switching power supply 4.6 ± 0.2 15.0 ± 0.5 • Features +0 1.5 − 0.4 φ 3.2 ± 0.1 13.7 ± 0.2 4.2 ± 0.2 • TO-220D Package • Allowing to rectify under (IF(AV) = 5 A) condition

HL6722G

Contextual Info: HL6722G AlGaInP Laser Diode ODE-208-220D Z Rev.4 Jan. 2003 Description The HL6722G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for bercode scanner, and various other types of optical equipment.

MA3DF46

Abstract: MA3df MA3df4
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF46 Silicon mesa type For high frequency recification For plasma display panel drive • Package  Features  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode

MA3DF40

Abstract: MA3df MA3df4
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF40 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package  Code TO-220D-A1  Pin Name 1: Anode 2: Cathode 3: Anode M Di ain