MA3DF30
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package Features High switching speed trr Soft recovery Absolute Maximum Ratings Ta = 25°C
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MA3DF30
Abstract: MA3DF40 MA3df3 Switching Characteristics of Fast Recovery Diodes
Contextual Info: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These devices hold the
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00v/400vma3df30ma3df40o-220d+4m00737aem00737bema3df3switching characteristics of fast recovery diodes
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MA3DF30
Contextual Info: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These devices hold the
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ma3df30
Abstract: MA3Df3
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package Features Code TO-220D-A1 Pin Name 1: Anode 2: Cathode 3: Anode
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MA3DF30
Contextual Info: Ultrafast trr characteristics 15 ns, typical Newly-Developed 300V/400V Fast Recovery Diodes Overview The MA3DF30 and MA3DF40 are fast recovery diodes that achieve the ultrafast trr characteristic of 15 ns (typical) by the use of an ultrafast process and a new structural design. These
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MA3DF30
Abstract: MA3df3 MA3df
Contextual Info: This product complies with RoHS Directive EU 2002/95/EC . Fast Recovery Diodes (FRD) MA3DF30 Silicon Mesa type For high frequency rectification For plasma display panel drive • Package Code TO-220D-A1 Pin Name 1: Anode 2: Cathode 3: Anode M Di ain
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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pamp13-n1mip2f3mip2f4mip382+7mip2e7dmymip2f2mip291mip414smip2e5dmymip411mip3e3smy equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39o-220d-a1ma26p02maz3082j+152sc5779ma26p07maz30912sc5829ma27e020gma3df252pg011dd5x062jdg3d501dsktj04da3df50db2u308ssmini2-f5-bdsk3j02dsc3f01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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k11 zener diode
Abstract: zener diode k11 diode k6 MA3DD82 MA2B150 MA3DF40 MA3DF30 MA2B171 MA21D350 MA3df3
Contextual Info: Diodes Switching Diodes. K2 Switching Diodes . K2
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ma24d56ma24d58ma24d70ma24d74+16ma3d749ma3d749ama3d750ma3d750ama3d752ma3d752ak11 zener diodezener diode k11diode k6ma3dd82ma2b150ma3df40ma3df30ma2b171ma21d350ma3df3
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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MA3DF30
Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
Contextual Info: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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ma3df30mip2fmip2fxmip2kx panasonic+6sc107aic 4026 internal structuremip2kma3df46ma3df46* ma3df30ma2yd260g
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