220A8 Search Results

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

MTP8N10

Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

MTH8P20

Abstract: MTH13N50 MTH7N50 MTH30N20 MTH25N10 MTH15N20 MTH35N15 MTH20N15 MTH40N06 MTP2P45
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

Contextual Info: HITACHI 2SB861-SILICON PNP TRIPLE DIFFUSED LOW F R E Q u S ^ Y P^WER W «*URER COLOR TV VERTICAL DEFLECTION OUTPUT COMPLEMENTARY PAIR WITH 2SD1138 « I " T 1. Base 2. Coilcctur f-hng«> 3. Umiucr in mm (JEDEC TO-220A8) • ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

MTP4N20

Abstract: MTP8N18 MTP5N40 mtp8n20 mtp4n35 IRF612 MTH8P20 power mosfets to 204aa T0-204AE MTM2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 MTM2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5 MTM5P20

Contextual Info: I HITACHI 2SD1601, 2SD1602 SILICON NPN TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER COMPLEMENTARY PAIR WITH 2S81101, 2SB1102 -, Î 1» T Í 1. B*« 1 1 i 2. C o l i e « « Î-3T7- .V E m itte r 3Q*w* gOimamon* if» mtr» JEDEC TO-220A8) • ABSOLUTE MAXIMUM RATINGS (Ta«:.rC)

mtp15n06

Abstract: MTP12P05 mtp25n06 MTP3055A MTP14N05A BUZ10 MTP12p06 MTA6N10 T0-225AA MTP2P50
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1

LM3661TL-1.40

Abstract: motorola MJ480 PN3054 2SC756 PN30 acrian inc MJE2482 MJE2480 MJE5190J MJ480
Contextual Info: POWER SILICON NPN Item Number Part Number I C . 5 10 20 25 30 044C3 80461 044C2 40621 80435 80735 80735 2N6205 2N6205 2N6205 S30•28 40310 40324 80463 SK3041 SK3041 S15·12 AP15·12 ~f~j:A 35 40 80X24 40316 1571·0420 80163 MJE2480 MJE2482 40250Vl 40250Vl

CLC220

Abstract: CLC220AI
Contextual Info: ÜFlComlinear üLd Corporation Fast Settling, Wideband Operational Amplifiers APPLICATIONS: FEATURES: • very high speed D to A, A to D conversion • high speed fiber optics systems • baseband and video communications • radar and IF processors • very fast risetime pulse amplifiers

IRF250a

Abstract: MTH8P20 MTM20N10 MTM45N15 MTP2P45 IRF240 IRF250 IRF252 MTM12N18 MTM15N20
Contextual Info: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 V b R(DSS) (Volts) Min (Ohms) Max (Amp) 200 0.18 10 0.16 7.5 0.12 16 Pd <“•T c = 25°C (Wans) Max IRF240 • 18 125 M TM 15N 20 • 15

2X20

Abstract: GMR40H100C GMR40H100CTB3T GMR40H100CTBF3T GMR40H100CTP3T GMR40H100CTPF3T CHL02 40H10 Diode, Dual Schottky, 20A, 100-V
Contextual Info: i GAM M A n G M R 40H 1O O C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER P o w e r D is c r e te DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies. M ajor R atings and C h a racte ristics Characteristics

2S8834 NEC

Abstract: 2S8834 2S8941 B0180 B0936 2S8505 S570G 2s87 2S8906 2SB834Y
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 '. 10 >= 20 80936 B0936 B0936F B0936F 2SB507 2S8508 2S81094M 043C8 ~1r~~ 25 30 35 40 BUY90 BUY90 MJE171 2N302S 2S81015 2S88340 2SB834 2S8834 2SB834 2S890S0 2SB994 2SB1187 2SB1187 2SB1033 2SB1033 2SB1094L 2S8744A

tip320

Abstract: MJ032C 9t18 80586 MJ032 4050gg diode hitachi MJE-371 BOT32 MJE371
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 80582 80940 80940 80940 80940F 80940F 2N6419 2N6419 ~~~~~7 25 30 2S81215 80T30DF 80T320F TIP320 80942 80942 80942 80942F ~~~~~~5 35 40 80X16 80X16 TIP32E TIP32E TIP32E TIP32F TIP32F TIP32F +~~~~;~g

MTO thyristor

Abstract: MAC228A10 221A-04 MAC223 MAC228 MAC228A MAC228A4 MAC228A6 MAC228A8 11CTC
Contextual Info: Triacs S ilic o n B id irec tio n al T rio d e T h y risto rs . . d e s ig n e d p rim a rily fo r in d u s tria l a n d c o n s u m e r a p p lic a tio n s f o r fu ll w a v e c o n ­ tro l o f lo a d s such as a p p lia n c e c o n tro ls , h e a te r c o n tro is . m o to r c o n tro ls , and

PTC160

Abstract: 2S8857 045C8 2sa768 sanken 2s87 SU44 2N6021
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 2S8986S 2S8986T 2S8986U 80X14 80X14 NKT4054 2N6049 80440 2N5194 2N6125 80536 80588 045C7 MJE235 2N6025 2N6026 MJ491 2S8566AK 2~I:S'tj2 35 40 2S8930 2S8942 80190 80274 2SA489 2S8509 2SA768 045C8