220 600 Search Results

220-14N1

Abstract: 220-12n1 220-16n1
Contextual Info: MDD 220 IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 800-1600 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 1 2 2 1 MDD 220-08N1 MDD 220-12N1 MDD 220-14N1 MDD 220-16N1 Symbol IFRMS IFAVM Test Conditions TVJ = TVJM TC = 100°C; 180° sine

GP10NB60SD

Abstract: STGP10NB60SD JESD97 SCHEMATIC dimmer igbt
Contextual Info: STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features Type VCES VCE sat (Max)@ 25°C IC @100°C STGP10NB60SD 600V < 1.7V 10A • HIGH CURRENT CAPABILITY ■ HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) 3 1 2 TO-220 Description Using the latest high voltage technology based on

SSM02N60P

Contextual Info: SSM02N60P N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive-avalanche rated BV DSS 600V Fast-switching RDS ON 8Ω Simple drive requirement ID 2A G D Description TO-220 S The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is well suited for DC/DC and AC/DC

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

ic 277

Abstract: 2SC4056 ITO-220 transistor Ic 4A NPN
Contextual Info: Inchange Semiconductor Product Specification 2SC4056 Silicon NPN Power Transistors DESCRIPTION ・With ITO-220 package ・Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline ITO-220 and symbol Absolute maximum ratings(Ta=25℃)

IMC060

Abstract: IMC-0603
Contextual Info: IMC-0603 Vishay Dale High Frequency, Surface Mount, Laser Spiral Coated Inductors FEATURES • • • • • • • • ELECTRICAL SPECIFICATIONS Inductance Range: 1.0 nH to 220 nH Inductance Tolerance: ± 0.3 nH for 1.0 - 3.3 nH ± 5 % for 3.9 nH to 220 nH

9290 diode

Contextual Info: VS-8S2TH06I-M Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES • • • • • • • • 2 1 2L TO-220 Hyperfast recovery time, extremely low Qrr Isolated TO-220 2 pin High frequency PFC CCM operation 175 °C maximum operating junction temperature

SIL-PAD 1000 TO 247

Abstract: Tgon 800 SIL-PAD to-264 C1260-40 C126 C264-058 SIL-PAD density TO220 land pattern "Tgon 800" TO220 SMALL heatsink
Contextual Info: HEATSINK C Series TO-126, TO-247, TO-220 and TO-264 Package Heatsinks Ohmite introduces the C series Pat. Pending . This series offers high performance, low cost and a compact heat sink with an integrated camming clip system for TO-126, TO-220, TO-247 and TO-264

PH1214-220M

Abstract: Radar transistor 220
Contextual Info: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

D3L60

Abstract: ITO-220
Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS D3L60 Case : ITO-220 Unit : mm 600V 3A FEATURES High Voltage trr50ns Fully Isolated Molding Dielectric strength 1.5kV guaranteed APPLICATION PFC Switching power supply Free Wheel CTV+B output, lighting

GP14NC60

Abstract: GF14NC60KD STGF14NC60KD STGP14NC60 JESD97 STGB14NC60KD STGP14NC60KD
Contextual Info: STGB14NC60KD STGF14NC60KD - STGP14NC60KD N-channel 14A - 600V - TO-220 - TO-220FP - D2PAK Short circuit rated PowerMESH IGBT General features Type VCES VCE sat (Max)@ 25°C IC @100°C STGB14NC60KD 600V <2.5V 14A STGF14NC60KD 600V <2.5V 7A STGP14NC60KD

F21NM60

Abstract: w21nm60 stp 520 f21nm60n P21NM60 w21nm60n W21NM p21nm60n MOSFET MARKING STP B21NM60N
Contextual Info: STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK I2PAK - TO-247 second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) max ID STB21NM60N STB21NM60N-1 STF21NM60N STP21NM60N

SF3650

Abstract: SF32 SF33 SF34 SF35 SF36 SF37
Contextual Info: SF31 THRU SF37 3.0 AMP SUPER FAST RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Good for switching mode application DO-27 .220 5.6

SF51

Abstract: SF52 SF53 SF54 SF55 SF56 SF57
Contextual Info: SF51 THRU SF57 5.0 AMP SUPER FAST RECTIFIERS VOLTAGE RANGE 50 to 600 Volts CURRENT 5.0 Amperes FEATURES * Low forward voltage drop * High current capability * High reliability * High surge current capability * Good for switching mode application DO-27 .220 5.6

D4NK6

Abstract: D4NK60Z P4NK60ZFP P4NK60 P4NK60Z b4NK60Z STP4NK60ZFP d4nk mosfet P4NK60Z i-pak Package zener diode
Contextual Info: STB4NK60Z, STB4NK60Z-1, STD4NK60Z STD4NK60Z-1, STP4NK60Z,STP4NK60ZFP N-channel 600 V, 1.76 Ω, 4 A SuperMESH Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP Features Type VDSS STB4NK60Z STB4NK60Z-1 STD4NK60Z STD4NK60Z-1 STP4NK60Z STP4NK60ZFP

MG50Q6es41

Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
Contextual Info: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752

GP10NC60H

Abstract: JESD97 STGP10NC60H RG 2006 10A 600V
Contextual Info: STGP10NC60H N-channel 10A - 600V - TO-220 Very fast PowerMESH IGBT General features Type VCES STGP10NC60H 600V IC VCE sat (Max)@ 25°C @100°C < 2.5V 10A • Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■

stp26nm60

Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Contextual Info: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

30nm60

Abstract: 30nm60n equivalent M 393 STF30 30NM6
Contextual Info: STB30NM60N,STI30NM60N,STF30NM60N STP30NM60N, STW30NM60N N-channel 600 V, 0.1 Ω, 25 A, MDmesh II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK Features Type VDSS @ TJmax RDS on max ID PW STB30NM60N 650 V <0.13Ω 25A 190 W STI30NM60N 650 V <0.13Ω

STGP12NB60HD

Contextual Info: STGP12NB60HD N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT TYPE VCES VCE sat IC STGP12NB60HD 600 V < 2.8 V 12 A • ■ ■ ■ ■ ■ ■ ■ HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

STD9NM60

Abstract: STD9NM60-1 STD9NM60T4 STP9NM60
Contextual Info: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω

STGP12NB60K

Contextual Info: STGP12NB60K N-CHANNEL 12A - 600V TO-220 SHORT CIRCUIT PROOF PowerMESH IGBT TYPE STGP12NB60K • ■ ■ ■ ■ ■ ■ VCES 600 V VCE sat IC (Max) @25°C @ 100°C < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-LOSSES LOW GATE CHARGE HIGH CURRENT CAPABILITY

STP13NM60

Abstract: 13NM60 STD13NM60 STF13NM60 STU13NM60 stb13nm60 13nm60n STW1 STB13NM60N MJ430
Contextual Info: STx13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh II Power MOSFET in D²PAK, DPAK, TO-220FP, I²PAK, TO-220, IPAK, TO-247 Features TAB Order codes VDSS @Tjmax RDS(on) max TAB 3 ID 1 3 1 STB13NM60N STD13NM60N STF13NM60N STI13NM60N STP13NM60N STU13NM60N