21JUL08 Search Results

3414a

Abstract: 11SM7601-H4 TWZ4500 175020-1 R-092
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER PLASTIC PLUNGER REV DOCUMENT 9 0041782 CHANGED PK BY 21JUL08 CHECK ASD 11SM7601-H4 PRODUCT CODE TWZ4500 .0 2 0 296 1 .010 MAX .0 4 6 R B B 0 9 2 DIA .3 5 6 ± .010 1_ ,094 ±.0.0 -.030 MAX A -088 l.gg?—1 .0 9 8

X9327

Abstract: 341SM169-H252 T85 1e4 Switch
Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV DOCUMENT 3 0041782 CORROSION RESISTANTSTEEL ACTUATOR 341SM169-H252 C H A N G E D BY PK 21JUL08 CHECK ASD PRODUCT CODE TZA2939 POINT "A " /4\ .080 MAX PRETRAVEL / 4 B B .3564.010 1 .155 *.015 •088 ^ ' q q ^/1

SiHL640S

Abstract: SMD-220 s8143 smd e3a IRL640S S-81431-Rev vishay smd mosfet SMD DIODE marking AB SMD diode NC smd diode marking 12c
Contextual Info: IRL640S, SiHL640S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.18 Qg (Max.) (nC) 66 Qgs (nC) 9.0 Qgd (nC) 38 Configuration Single • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating

30CPH03

Abstract: IRFP250
Contextual Info: 30CPH03PbF Vishay High Power Products Ultrafast Rectifier, 2 x 15 A FRED PtTM FEATURES Base common cathode 2 • Ultrafast recovery time Pb-free • Low forward voltage drop Available RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature

SiHFP22N50A

Abstract: IRFP22N50A marking M3 IRFP22N50
Contextual Info: IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.23 Qg (Max.) (nC) 120 Qgs (nC) 32 Qgd (nC) 52 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

mcd 14

Contextual Info: VLMK/Y62. Vishay Semiconductors Power SMD LED CLCC-6 Flat FEATURES • Utilizing AlInGaP technology • Very low thermal resistance • Optical efficiency 35 lm/W e4 • Luminous intensity and color grouping • Luminous intensity ratio per package unit IVmax./IVmin. ≤ 1.6

IRLR024

Abstract: IRLU024 SiHLR024 SiHLR024-E3 SiHLU024 SiHLU024-E3
Contextual Info: IRLR024, IRLU024, SiHLR024, SiHLU024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 18 • Straight Lead (IRLU024/SiHLU024) Qgs (nC) 4.5 • Available in Tape and Reel 12 • Logic-Level Gate Drive

IRFB9N65A applications

Abstract: IRFB9N65A SiHFIB5N65A SiHFB9N65A SiHFB9N65A-E3 smps power
Contextual Info: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) (Ω) VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS*

IRFR110

Abstract: IRFU110 SiHFR110 SiHFR110-E3 SIHFU110
Contextual Info: IRFR110, IRFU110, SiHFR110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 8.3 • Surface Mount (IRFR110/SiHFR110) Qgs (nC)

IRFPS35N50L

Abstract: SiHFPS35N50L SiHFPS35N50L-E3
Contextual Info: IRFPS35N50L, SiHFPS35N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.125 Qg (Max.) (nC) 230 Qgs (nC) 65 Qgd (nC) 110 Configuration

70CRU02

Abstract: IRFP250
Contextual Info: 70CRU02PbF Vishay High Power Products Ultrafast Rectifier, 2 x 35 A FRED PtTM FEATURES • • • • • • Two common-cathode diodes Available Ultrafast reverse recovery Ultrafast reverse recovery current shape RoHS* COMPLIANT Low forward voltage drop

IRLIZ24G

Abstract: SiHLIZ24G-E3 SiHLIZ24G
Contextual Info: IRLIZ24G, SiHLIZ24G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V

IRFD220PBF

Abstract: IRFD220 SiHFD220 SiHFD220-E3
Contextual Info: IRFD220, SiHFD220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 0.80 Qg (Max.) (nC) 14 Qgs (nC) 3.0 Qgd (nC) 7.9 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated

16CTU04-1

Abstract: 16CTU04S IRFP250
Contextual Info: 16CTU04SPbF/16CTU04-1PbF Vishay High Power Products Ultrafast Rectifier, 2 x 8 A FRED PtTM FEATURES 16CTU04-1PbF 16CTU04SPbF • Ultrafast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature

Contextual Info: IRFBC30A, SiHFBC30A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 2.2 Qg (Max.) (nC) 23 Qgs (nC) 5.4 Qgd (nC) Ruggedness • Fully Characterized Capacitance and Avalanche Voltage

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

Contextual Info: SQV90N06-05 Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0052 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-262

Contextual Info: IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V • For Automatic Insertion 0.20 Available RoHS* Qg (Max.) (nC) 11 • End Stackable Qgs (nC) 3.1 • 175 °C Operating Temperature

inductor 1 mH

Contextual Info: IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 1.8 Available • Repetitive Avalanche Rated • Surface Mount (IRFR320/SiHFR320) 20 Qgs (nC)

4.5v to 100v input regulator

Contextual Info: IRFR1N60A, IRFU1N60A, SiHFR1N60A, SiHFU1N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Max.) (Ω) VGS = 10 V 7.0 Qg (Max.) (nC) 14 Qgs (nC) 2.7 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration Available • Logic-Level Gate Drive 0.050 • RDS(on) Specified at VGS = 4 V and 5 V

Contextual Info: IRFZ24S, IRFZ24L, SiHFZ24S, SiHFZ24S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Advanced Process Technology VDS V 60 RDS(on) (Ω) • Surface Mount (IRFZ24S/SiHFZ24S) VGS = 10 V 0.10 Qg (Max.) (nC) 25 Qgs (nC) 5.8 Qgd (nC) 11 Configuration

2160 transistor datasheet

Abstract: a 2160 216-0216
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2160 MHz 4.7 VDC 2160 MHz Tuning Voltage: 0.3 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +5.0 +7.0 +9.0 dBm 29 35 mA Harmonic Suppression 2 Harmonic :

600d sprague

Abstract: 600D157G030DG4 600D107G050DJ4 600D686G050DG4 600D126F250DJ4 600D225F sprague 600d kd 505 transistor 375 600D
Contextual Info: 600D Vishay Sprague Aluminum Capacitors Miniature, Axial Lead, High Reliability FEATURES • Wide temperature range • Foil tantalum replacement • Unique Teflon end seal for long life Fig.1 Component outline • High vibration capability • Life test 2000 hours at + 125 °C