21APR2000 Search Results

02APR

Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

M48T35AY

Abstract: M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845
Contextual Info: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1

EIGHT MOSFET ARRAY

Abstract: 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44
Contextual Info: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset

M48Z35

Abstract: M48Z35Y SOH28 PCDIP28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:

M48T35AY

Abstract: STMicroelectronics M4T32-BR12SH6
Contextual Info: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

TSOP32 Package

Abstract: FDIP32WC JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
Contextual Info: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ■ Pin compatible with M27C801 ■ Low power consumption:

FDIP32WC

Abstract: JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
Contextual Info: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 32 ■ Pin compatible with M27C801 ■ Low power consumption:

M27C801

Abstract: M27W801 PDIP32 PLCC32 TSOP32
Contextual Info: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1

Contextual Info: 4 TH 1S DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC R E V 1S 1ONS D I ST BY TYCO ELECTRONICS CORPORAT 1ON. ALL RIGHTS RESERVED. COPYRIGHT - p LTR 3 0 , 5 . 5 4 > 1 9 ,7 ^ 6x2,54=15,24 2, 54 DESCR1PTION DATE issue. DWN APVD B First C E CR- 06 - 0 2 3 7 4 4

k 2608

Abstract: M48Z35 M48Z35Y SOH28
Contextual Info: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:

M48T35AV

Abstract: M48T35AY SOH28
Contextual Info: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: 4 TH 1S DRAWING IS UNPUBLI S HED. RELEASED FOR PUBLI CATI ON BY TYCO ELECTRONI CS COR POR AT I ON©11- RI GHT S COPYRIGHT - 3 0 , 5 _ q 20 LOC R E V 1S 1ONS DI S T RESERVED. p LTR DESCR1PTI ON B C D E ED 6 X 2 , 5 4 = 1 5 , 2 4 MI 2,54 I First DATE

1N5817

Abstract: M48T212V M4TXX-BR12SH MTD20P06HDL SOH44 diode EB 24
Contextual Info: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset

M27C801

Abstract: M27W801 PDIP32 PLCC32 TSOP32
Contextual Info: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1

Contextual Info: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • ■ ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access BCD coded year, month, day, date, hours, minutes, and seconds

M48T35AY

Abstract: M48T35AV SOH28
Contextual Info: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset

M27C8

Abstract: M27C80
Contextual Info: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P

DB3 C640

Abstract: ST7920a WDG1603P A940 A970 S149 AAB0 DB3 C540 a950 AB70
Contextual Info: ST Sitronix ST7920A ㆗文字型點矩陣 LCD 控制/驅動器 PRELIMINARY 主要特色 z 配合外部 Segment 驅動器可以擴充顯示區 域到達15x2個㆗文字 z 內建振盪器由外部電阻調整 z 低功率省電設計 z VLCD V0~ Vss : 最大 7V

M48T35AV

Abstract: M48T35AY SOH28
Contextual Info: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultralow power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds