2170 Search Results

R7730

Contextual Info: AP502 UMTS-band 4W HBT Amplifier Module Product Features Product Description • 2110 – 2170 MHz • +36 dBm P1dB • -55 dBc ACLR @ 25 dBm wCDMA linear power • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg

DIN 16901 130 plastic

Abstract: DIN 16901 150 DIN 16901 ISO 7045 DIN 16901 130 DIN 16901 110 DIN 16901 150 plastic M4x24 DIN 16901 140 Weidmu
Contextual Info: Polycarbonate 03 Polycarbonate 33 ABS 09 Standard Industrial Enclosure For Finishing Services, Product Support, or to Order Call 1-301-696-9800 Rose Enclosures • 7330 Executive Way • Frederick, MD 21704 • 301-696-9800 • www.Rose-Bopla.com • E-mail: RBinfo@pm-usa.com

2170sv005

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2170 Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A59551 b) Stranding Solid c) Diameter

Contextual Info: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. 2170 Construction 1) Conductor a) Material Tinned Copper, per ASTMB-33 and CID-A-A59551 b) Stranding Solid c) Diameter

MRF6S21140HR3

Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

siemens s7 em 223

Abstract: siemens EM 235 Siemens xl 532 siemens s7 em 214 cpu 222 siemens noise cancellation IC metal detector diagram PI TT 2170 cadence xa 125.2 LT 7238
Contextual Info: SIEMENS ICs for Communications Acoustic Echo Canceller ACE PSB 2170 Version 1.1 Preliminary Data Sheet 10.97 DS1 This Material Copyrighted By Its Respective Manufacturer PSB 2170 Revision History: Current Version: 10.97 Previous Version: None Page in previous

transistor 2120

Contextual Info: Preliminary Specifications Surface Mount Voltage Controlled Oscillator ISM 2120 - 2170 MHz MLO80100-02145 V1.00 Features 1.01 3.89 GND 4 2 1.57 VCC Description The MLO80100-02145 is a fundamental single ended oscillator designed for use in cost sensitive wireless and telemetry

AAN-232

Contextual Info: Model XDL21-6-117 Rev C Delay Line DESCRIPTION The XDL21-6-117 is a surface mount delay line that uses a slow wave coupling structure that maximizes the amount of delay per unit area over other distributed delay structures. The XDL21-6-117 can be used in amplifier linearization applications from 2110 – 2170MHz. The XDL21-6117 is ideal for use in the main loop of feed forward and in pre-distortion

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

Contextual Info: COMPONENTS MCX PLUG MCX PLUG RG188A/U IMPEDANCE 50 OHM 50 OHM 50 OHM Standard Lengths -12 12" -24 24" -36 36" -48 48" -60 60" •XXX Custom Length in inches LENGTH MEASURED FROM CONTACT TO CONTACT .2170 := MCX PLUG MCX PLUG PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623

PE4878

Abstract: RG188-DS RG316-DS
Contextual Info: BODY CONTACT INSULATOR MATERIALS BRASS NICKEL PLATED GOLD PLATED PTFE •. 9 1 5 - 2170 PASTERNACK ENTERPRISES, INC. P.O BOX 16759, IRVINE, CA 92623 PHONE {949 261-1920 FAX 949) 261-7451 100 WEB ADDRESS: www.pasternack.com E-MAIL ADDRESS: sales@pasternack.ccm

Contextual Info: IMPEDANCE 50 OHM 50 OHM 50 OHM COMPONENTS MCX PLUG RIGHT ANGLE MCX PLUG RG316/U Standard Lengths -12 12" -24 24" -36 36" -48 48" -60 60" •XXX Custom Length in inches LENGTH MEASURED FROM CONTACT TO CONTACT .340 n i =: .2170 M C X PLUG T M C X PLUG RIG H T A N G LE

SIM-43MH

Contextual Info: Frequency Mixer SIM-43MH+ Typical Performance Data RF IN (MHz) 670.0 770.0 870.0 970.0 1070.0 1170.0 1270.0 1370.0 1470.0 1570.0 1670.0 1770.0 1870.0 1970.0 2070.0 2170.0 2270.0 2370.0 2470.0 2570.0 2650.0 2750.0 2830.0 2930.0 3010.0 3110.0 3190.0 3290.0

LFCN-1800

Contextual Info: Ceramic Low Pass Filter LFCN-1800 Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 50 100 500 1500 1800 1930 2125 2170 2190 2265 2315 2350 2380 2410 2425 2440 2500 2580 2870 2940 3320 4000 4500 5100 5500 6000 6500 7200 7450 8000 8600 9500 10000 11000

VLF-1525

Contextual Info: Coaxial Low Pass Filter VLF-1525+ Typical Performance Data INSERTION LOSS dB FREQ. (MHz) 40 100 500 1000 1500 1525 1595 1750 1765 1815 1885 1940 1985 2000 2030 2075 2170 2220 2400 2670 3000 3830 4500 5000 5500 6000 6600 6650 6700 7010 7500 8000 9000 10000

MOS-2170-419

Contextual Info: Voltage Controlled Oscillator Typical Performance Data MOS-2170-419+ Frequency and Tuning Sensitivity Power Output 2300 FREQ. @ -55°C FREQ. @ +25°C 28 4.5 26 4.0 Output Power dBm Frequency (MHz) T.SENS @ +25°C 2240 24 2220 22 2200 20 2180 18 2160 16 2140

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

Contextual Info: FLL21E135IX L,S-band High Power GaAs FET FEATURES ・High Voltage Operation VDS=28V GaAs FET ・High Gain: 15.5dB(typ.) at Pout=44.8dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・High Reliability DESCRIPTION The FLL21E135IX is a high power GaAs FET that offers high efficiency,

LET21030C

Contextual Info: LET21030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • POUT = 30 W with 11 dB gain @ 2170 MHz • BeO FREE PACKAGE • INTERNAL INPUT MATCHING CASE 465E–03, STYLE 1

MAMXES0050

Abstract: diode 2140
Contextual Info: MAMXES0050 E-Series Surface Mount Mixer 2110 – 2170 MHz Features • • • • SM-87 Package LO Power +7 dBm Up to +1 dBm RF Surface Mount Low Profile Note: Non Hermetic Package Description M/A-COM’s MAMXES0050 is a Low Cost, Broadband, high performance Double Balanced Mixer designed for use in high

LGA marking code stmicroelectronics

Abstract: RAFTP98 STRAFT-P98L15 LQW15AN8N2C00 ST LGA marking code STHVDAC-303
Contextual Info: STRAFT-P98L15 Antenna tuner for cellular application Datasheet  production data Features • 50  nominal Input for a wide range of output impedances ■ Wide operating frequency range 824 MHz to 2170 MHz ■ Specifically optimized to match single antenna

BLF7G22LS-200

Abstract: BLF7G22L BLF7G
Contextual Info: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance

Contextual Info: plerowTM ALN2140BT Internally Matched LNA Module Features Description • S21 = 14.8 dB @ 2110 MHz = 14.2 dB @ 2170 MHz · NF of 0.8 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount

Contextual Info: plerowTM ALN2047 Internally Matched LNA Module Features Description • S21 = 25.6 dB @ 1920 MHz = 24.4 dB @ 2170 MHz · NF of 0.85 dB over Frequency · Unconditionally Stable · Single 5V Supply · High OIP3 @ Low Current C o u pl er C o u pl er The plerowTM ALN-series is the compactly designed surface-mount