210A Search Results

Contextual Info: BCM Bus Converter BCM48B x 030 y 210A00 S C NRTL US Unregulated DC-DC Converter FEATURES DESCRIPTION The VI Chip® bus converter is a high efficiency >94% Sine Amplitude Converter (SAC™) operating from a 38 to 55 Vdc primary bus to deliver an isolated, unregulated 2.4 to 3.4

HFA210NJ60D

Abstract: IRFP250 PD-2515
Contextual Info: PD -2.515 rev. A 02/99 HFA210NJ60D HEXFRED Ultrafast, Soft Recovery Diode TM Anode 1 Features Cathode 2 • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Base AC V R = 600V V F typ. ƒ = 1.2V IF(AV) = 210A Qrr (typ.) = 450nC

lineage 2000 power plant ECS

Abstract: KS20289 lineage 2000 ecs power plant controller 847307410 BL2W ECS CONTROLLER T-82673-30 resistor ks20289 KS20289L6C lineage 2000 power plant controller
Contextual Info: Product Manual J85501X-1 Lists K1, K2, K3 Select Code 157-010-200 Comcode 107224446 Issue 5 March 1998 Lucent Technologies Lineage 2000 Battery Thermal Protection 210A Control Module Notice: Every effort was made to ensure that the information in this document was complete and accurate at the time of printing.

Contextual Info: BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GB 120 DN2 1200V 210A IC Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter

vfc 1200

Abstract: BSM150GAL120DN2E3166 C67076-A2112-A70 dc chopper circuit
Contextual Info: BSM150GAL120DN2E3166 IGBT Power Module • Single switch with chopper diode • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC BSM150GAL120DN2E31661200V 210A Package Ordering Code HALF BRIDGE GAL 2 C67076-A2112-A70

Contextual Info: BSM 150 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GAL 120 DN2 1200V 210A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70

BU 4520

Abstract: 2N6962 TO210AC
Contextual Info: IflE D SILICONIX INC • ÖSS47BS GOISCH? 1 ■ f 2N6962 N-Channel Enhancement Mode Transistor QPL product is in accordance with MIL-S-19500/568 T0-210AC TO-61 Isolated Case TOP VIEW This device contains beryllium oxide PRODUCT SUMMARY ■d V (BRJDSS 100

Contextual Info: D465_TLA6T 1/2 LAN Components TLA-6T207A/208A/209A/210A 10/100BASE-TX Pulse Transformers FEATURES • Low profile(H=2.1mm max.) for PCMCIA(PC card). • 2 pulse transformers and 2 common-mode chokes are integrated into 14-pin SMD package. • Greater than 350µH[100kHz] at DC current bias 8mA.

IRFP3703

Contextual Info: PD - 93917A IRFP3703 SMPS MOSFET HEXFET Power MOSFET Applications l Synchronous Rectification l Active ORing VDSS RDS on max ID 30V 0.0028Ω 210A† Benefits l Ultra Low On-Resistance l Low Gate Impedance to Reduce Switching Losses l Fully Avalanche Rated

IXGX320N60A3

Contextual Info: IXGK320N60A3 IXGX320N60A3 GenX3TM 600V IGBT VCES = 600V IC110 = 210A VCE sat  1.30V Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M

Contextual Info: Preliminary Technical Information IXFB210N30P3 Polar3TM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = =   300V 210A  14.5m 250ns PLUS264TM Symbol Test Conditions Maximum Ratings

KAQY210A

Abstract: KAQY210
Contextual Info: High Voltage, Photo DEMos Relay KAQY210/210A UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQY210 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA 5. Low ON-Resistance

KAQV210AB

Abstract: KAQV210B
Contextual Info: High Voltage, Photo DEMos Relay KAQV210B/210AB UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQV210B 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA 5. Low ON-Resistance

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: euoec F BSM 150 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VbE Package Ordering Code BSM 150 GB 120 DN2 1200V 210A HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings Parameter

BSM150GAL120DN2

Abstract: C67076-A2013-A70
Contextual Info: BSM 150 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE BSM 150 GAL 120 DN2 1200V 210A IC Package Ordering Code HALF BRIDGE GAL 2 C67076-A2013-A70

2N986

Abstract: schematic diagram RPM meter transistor T K 2056 diak
Contextual Info: M 1 L - S - 1 9 5 0 0 / 210I3 NAV Y 21 m a r c h 1969 _ S U P E R S E D IN G M1L-S-19500/210A(NAV Y) 20 September 1961 M IL IT A R Y S P E C IF IC A T IO N SEM IC O N D U C T O R D E V IC E , 1. T R A N S IS T O R , N PN , S IL IC O N , PH O T O -rypp 2N9§6

Contextual Info: DB LECTRO Inc. High Voltage, Photo Mos Relay KAQW210/210A E D UL 1577/ UL 508 File No.E108430 , FI EN60950 (File No.FI13698) Features KAQW210 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA

TLA-6T207A

Abstract: TDK Pulse Transformers 6T210A smd PULSE TRANSFORMER TDK common mode choke 78Q2120 ICS1890 ML6673 QS6611 QS6612
Contextual Info: D465_TLA6T 1/2 LAN Components TLA-6T207A/208A/209A/210A 10/100BASE-TX Pulse Transformers FEATURES • Low profile(H=2.1mm max.) for PCMCIA(PC card). • 2 pulse transformers and 2 common-mode chokes are integrated into 14-pin SMD package. • Greater than 350µH[100kHz] at DC current bias 8mA.

LVDT to Digital

Abstract: lvdt 210A200 lvdt and information 10 bit Controlled Oscillator
Contextual Info: resolver excitation oscillator 150mA programmable series 210A200 FEATURES • 2.0" x 2.0" x 0.4" micro-module ■ Up to 15Vrms output ■ 10 bit amplitude control ■ Eight frequency ranges, 400Hz to 5000Hz ■ Short circuit and overload protection ■ Thermal cut-off protection

IXTK210P10T

Contextual Info: Advance Technical Information IXTK210P10T IXTX210P10T TrenchPTM Power MOSFETs VDSS ID25 = = ≤ ≤ RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier - 100V - 210A Ω 7.5mΩ 200ns TO-264 (IXTK) Symbol Test Conditions Maximum Ratings

d0109

Abstract: sanken power transistor FMEN-210A 210A
Contextual Info: Schottky Barrier Diode FMEN-210A March, 2006 •General Description ■Package-TO220F FMEN-210A is a High Voltage 100V Schottky Barrier Diode, and has achieved low leakage current and low VF by selecting the best barrier metal. ■Applications • DC-DC converters

b061

Abstract: 25CC B062 KAQW210 KAQW210A
Contextual Info: cosmo High Voltage, Solid State Relay-MOSFET Output KAQW210/210A UL 1577/ UL 508 File NO.E108430 , Fl EN60950 (File NO.FI13698) Features KAQW210 1. Normally Open, Single Pole Single Throw 2. Control 350VAC or DC Voltage 3. Switch 130mA Loads 4. LED control Current, 5mA

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 100 gb siemens igbt BSM 300 siemens igbt chip a2108 C67076-A2108-A70 siemens igbt
Contextual Info: SIEMENS BSM 150 GB 120 DN2 CT=> 3SS IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 150 GB 120 DN2 VCE lc 1200V 210A Package Ordering Code HALF-BRIDGE 2 C67076-A2108-A70 Maximum Ratings