21083 Search Results

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

Contextual Info: Part Details for P/N: 210832-4 Products | Catalog | Brands | Industries | Commerce | Supplier | Contact Us | About | Home Home Part Number Search Document Search Sockets PGA Sockets AMP 210832-4 Active Active Tyco Electronics P/N: 210832-4 Not Reviewed for ELV/RoHS Compliance

MURB1620CT

Abstract: IRFP250 MURB1620CT-1 SMD-220 21083 smd code marking pd
Contextual Info: Bulletin PD-21083 08/05 MURB1620CTPbF MURB1620CT-1PbF Ultrafast Rectifier Features • • • • • trr = 25ns IF AV = 16Amp VR = 200V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Lead-Free ("PbF" suffix)

Contextual Info: Bulletin PD-21083 rev. A 04/07 MURB1620CTPbF MURB1620CT-1PbF Ultrafast Rectifier Features • • • • • trr = 25ns IF AV = 16Amp VR = 200V Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature Lead-Free ("PbF" suffix)

ba 5937 fp

Contextual Info: PRODUCT PREVIEW in te l FAST BOOT BLOCK FLASH MEMORY FAMILY 8 AND 16 MBIT 28F800F3, 28F160F3 Includes Extended and Automotive Temperature Specifications • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads

Contextual Info: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms

"NOR Flash" intel 28f

Abstract: 29060
Contextual Info: PRELIMINARY intei 5 VOLT INTEL StrataFlash MEMORY 28F320J5 and 28F640J5 x8/x16 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

F1H16

Abstract: 29060
Contextual Info: PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

Contextual Info: PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V Vpp Fast Programming ■ 2.7V or 1.8V I/O Option

28F800F3T

Abstract: te28f800f3t120 B3T125
Contextual Info: intei PRELIMINARY 3 VOLT FAST BOOT BLOCK FLASH MEMORY 28F800F3 and 28F160F3 x16 • High Performance — 54 MHz Effective Zero Wait-State Performance — Synchronous Burst-Mode Reads — Asynchronous Page-Mode Reads ■ Supports Code Plus Data Storage — Optimized for Flash Data Integrator

29064

Contextual Info: in te l PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C3, 28F160C3, 28F320C3 x16 • ■ Improved 12 V Production Programming — Faster Production Programming — No Additional System Logic ■ 128-bit Protection Register — 64-bit Unique Device Identifier

5 PEN PC TECHNOLOGY free

Contextual Info: ADVANCE INFORMATION INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 a n d 28F640J5 High-Density Sym m etrically-Blocked A rchitecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Com patible Command Support

DIP-10

Abstract: optotriac
Contextual Info: VO3526 Vishay Semiconductors Power Phototriac FEATURES • Maximum trigger current IFT : 10 mA Pin 2 3 4 5 6 7 9, 13 11 15 Function LED anode LED cathode N/C N/C N/C N/C Triac T2 Triac T1 Triac gate 15 2 3 • Isolation test voltage 5300 VRMS • Peak off-state voltage 600 V

28F160C2

Abstract: 28F800C2 AP-657 TE28F160C2TA100
Contextual Info: E PRELIMINARY 2.4 VOLT ADVANCED+ BOOT BLOCK FLASH MEMORY 28F800C2, 28F160C2 x16 n n n n n n Flexible SmartVoltage Technology  2.4 V–3.0 V Read/Program/Erase  12 V for Fast Production Programming High Performance  2.4 V–3.0 V: 100 ns Max Access

Contextual Info: Product Number: 2108-3-00-01-00-00-07-0 Description: 2108 - Turret Terminal Pin Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 2108-3-00-01-00-00-07-0 200 - 300 " Tin/Lead over Nickel 00 RoHS Compliant SHELL MATERIAL:

sense amplifier bitline memory device

Abstract: Intel nor flash AP-644 AP-646 AP-647 29785
Contextual Info: E TECHNICAL PAPER Intel StrataFlash Memory Technology September 1997 Order Number: 297859-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

28F320J5

Abstract: 28F640J5 intel DOC N15H
Contextual Info: E PRODUCT PREVIEW SERIES 200 FLASH MEMORY MINIATURE CARD 4, 8, 16 MBYTES iFM004G, iFM008G and iFM016G n Low-Cost Linear Flash Card  Intel StrataFlash TM Memory Flash Technology n n n n n Fast Read Performance  150 ns Max Access Time High-Performance Writes

la-2151

Abstract: 21172-BA 21172-CA FDC37C935 MAPS A42 DS1287 led bulb circuit diagram free tag 8518 giga MOTHERBOARD schematic diagram
Contextual Info: Digital Semiconductor AlphaPC 164 Motherboard Technical Reference Manual Order Number: EC–QPFYB–TE Revision/Update Information: This manual supersedes the Digital Semiconductor AlphaPC 164 Motherboard Technical Reference Manual EC–QPFYA–TE . Preliminary

28F008C3

Abstract: 28F016C3 28F032C3 28F160C3 28F320C3 28F800C3 sr5 diode
Contextual Info: E PRELIMINARY 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 28F008C3, 28F016C3, 28F032C3 28F800C3, 28F160C3, 28F320C3 n n n n n n Flexible SmartVoltage Technology  2.7 V–3.6 V Read/Program/Erase  2.7 V or 1.65 V I/O Option Reduces

k30206

Abstract: SENSOR HALL 946 s 452 kd 2060 transistor
Contextual Info: Complete Catalogue 4/2015 Residual current monitoring in grounded power supply systems with residual current relay type RCM1000V and current transformers type STWA3D Meas uring, C ontr olling, Moni t o r i n g o n h i g h e s t l e v e l Editorial Besser, schneller, innovativer, das ist unsere Maxime bei

MC 9080

Abstract: hp image point hx 210830 EP80960 auto changing in/out indicator doorbell project i960 MC Programmers Reference Manual MON960 seven segment quad digit display red input pci9080 53c87
Contextual Info: MON960 Debug Monitor User’s Guide Order Number: 484290-008 Revision Revision History Date -001 Original Issue. 01/93 -002 Updated for V1.1 release. 02/93 -003 Revised for MON960 release 2.0. 05/94 -004 Revised for MON960 release 2.1. 11/94 -005 Revised for MON960 release 3.0.

C17300

Contextual Info: REVISIONS DESCRIPTION 1.229 ±.010 REV 02q ECN 93-0005 DATE APPROVED 2/8/93 "EC»*«-2/22/93 V DIA x 3.2mm 4 PLACES SQ DIA OSM^v JACK \ .250-36 UNS-2A .625-24 UNEF-2A REF PLANE ELECTRICAL Nominal Impedance (Ohms) MECHANICAL 50 Frequency Range (GHz) DC to 18_

Contextual Info: High Current Toroid Inductors Special Features 2100 Series • DC-DC converter, EMI filter applications • Low radiation • Low core loss • High current capacity • Horizontal or vertical mount • Low cost • Operating temperature -55 to +105°C • Current to cause 30°C maximum

MOTOROLA 13003

Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER