20VPI Search Results

PMN32UN

Abstract: PMN34UN PMN23UN PMN27UN PMN28UN PMN34LN PMN40LN
Contextual Info: iT r e n c h M O S TSOP6î!t*tKJ30V ' 20VPI12V NSSMOSFETS «HISfflKJfrflif1?! m m m m \ ’ ÎIJ f f lf R ÎIJ « f f i|IJ f f W T r e n c h g « f f lîÎS Îi/ jN { b ^ f f l0 ^ M ^ 't g t i . m m m » 'm ° (iT iw ic h M o s s f R fiM W f fM a m îm

Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

CGH40006P-TB

Abstract: RO5880 006P CGH40006P JESD22 CGH40006
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

P02DP

Contextual Info: General Purpose Operational Amplifier CORPORATION 0P-02 FEATURES DESCRIPTION • • • • The OP-02 is a general purpose, internally frequency compensated, high-performance operational amplifier. The device is pin-for-pin compatible with the industry standard 741

CGH40006

Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

2SC5069

Abstract: VEBO-15V 2038a
Contextual Info: Ordering n u m b e r:E N 4 5 0 9 No.4509 _ 2SC5069 NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver Applications I F e a tu re s •High C urrent Capacity. • Adoption of MBIT process. • High DC current gain.

Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

LM373

Abstract: pin for lm 339 ic LM1805 LM375 LM566 equivalent LX1604G LM3066 lm374 lm567 equivalent LM1820
Contextual Info: Introduction Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

2N2369 AVALANCHE PULSE GENERATOR

Abstract: 2n3054 JEC 600 watts amplifier schematic diagram Germanium drift transistor LM373 AN6311 germanium transistor transitron LM304 AN2918
Contextual Info: National PREFACE The purpose of this handbook is to provide a fully indexed and cross-referenced collection of linear in­ tegrated circuit applications using both monolithic and hybrid circuits from National Semiconductor. Individual application notes are normally written to ex­

Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

CGH40006P

Abstract: 1878 TRANSISTOR RO5880 CGH4000 CGH40006P-TB
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

2VN 211

Abstract: MAX502Bcng
Contextual Info: 19-4011; R e v ft 9/91 A A Æ A X J V K Voltage-Output, 12-B it M ultiplying DACs T he M AX501/M AX502 are 12-bit, 4 -q u a d ran t, voltageo u tp u t, m u ltip ly in g d ig ita l-to -a n a lo g converters DACs w ith an o u tp u t am plifier. T h in -film resistors, laser

cgh40006p

Abstract: RO5880 J427 CGH40006P-TB Cree Microwave 006P JESD22 1878 TRANSISTOR
Contextual Info: CGH40006P 6 W, RF Power GaN HEMT Cree’s CGH40006P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and