SMD1210P020TF
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SUNMATE electronic Co., LTD
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Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices, featuring low resistance, fast response, and high voltage surge capability.Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices requiring low resistance and high surge capability.Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices requiring low resistance and high surge capability.Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices, featuring low resistance, fast fault response, and compatibility with lead-free soldering processes.Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices, featuring low resistance, fast fault response, and high voltage surge capability.SMD1210P series surface mount PTC resettable fuse with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronics, featuring low resistance, fast response, high voltage surge capability, and compliance with RoHS, lead-free, and halogen-free standards.Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices, featuring low resistance, fast fault response, and compatibility with lead-free soldering processes.Surface mount PTC resettable fuse in 1210 size with holding current from 0.05A to 2.60A, designed for over-current protection in compact electronic devices, featuring low resistance, fast fault response, and compatibility with lead-free soldering processes. |
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JMTG030P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -20 V drain-source voltage, -85 A continuous drain current, and low on-resistance of 2.6 mΩ typical at VGS = -4.5 V, housed in a PDFN5x6-8L package. |
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JMTJ250P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -20V drain-source voltage, -5A continuous drain current, and RDS(on) less than 26mΩ at VGS=-4.5V, available in SOT-23-3L package. |
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JMTV210P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTV210P02A in DFN2020-6L package, -20V, -15A, RDS(ON) < 15.1mΩ at VGS = -4.5V, featuring advanced trench technology, low gate charge, and lead-free design. |
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HSBB60P02
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Huashuo Semiconductor
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P-Ch 20V Fast Switching MOSFET HSBB60P02 with -60A continuous drain current, 4.3mΩ typical RDS(ON), low gate charge, and advanced high cell density trench technology for synchronous buck converter applications. |
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JMTJ210P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTJ210P02A with -20V drain-source voltage, -7A continuous drain current, and low on-resistance of 18.7mΩ at VGS = -4.5V, available in SOT-23-3L package. |
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SLN50P02T
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Maplesemi
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P-Channel MOSFET with -20V drain-source voltage, -50A continuous drain current, 5.4 mΩ typical RDS(on) at VGS = -4.5V, in DFN3x3 package, featuring low on-resistance, fast switching, and 100% avalanche tested performance. |
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SKQ40P02AD
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Shikues Semiconductor
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20V P-Channel MOSFET, RDS(ON)=6mΩ@VGS=-4.5V, 7.5mΩ@VGS=-2.5V, Power Management in Notebooks, Portable Equipment, Battery Systems. |
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HSU60P02
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Huashuo Semiconductor
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P-Ch 20V Fast Switching MOSFET with -60A continuous drain current, 6.6 mΩ typical RDS(ON), low gate charge, and advanced trench technology for high-density power applications. |
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NCE60P02Y
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -2A continuous drain current, 160mΩ typical RDS(ON) at VGS=-10V, and low gate charge, suitable for load switch and PWM applications. |
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JMTK50P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel MOSFET with -20V drain-source voltage, -60A continuous drain current, RDS(on) less than 8.5mΩ at VGS = -4.5V, TO-252 surface mount package, suitable for PWM and load switch applications. |
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HSBA90P02
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Huashuo Semiconductor
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HSBA90P02 is a P-channel 20V -90A MOSFET in PRPAK5x6 package, featuring 1.9mΩ RDS(ON), advanced trench technology, low gate charge, and 100% EAS tested for synchronous buck converter applications. |
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JMTV250P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel enhancement mode power MOSFET with -20V drain-source voltage, -10A continuous drain current, and RDS(on) less than 19.2mΩ at VGS=-4.5V, available in DFN2020-6L package. |
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AK60P02Y
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AK Semiconductor
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AK60P02Y is a P-Channel Enhancement Mode Power MOSFET with -60V drain-source voltage, -2A continuous drain current, and low RDS(ON) of 160mΩ at VGS=-10V, suitable for load switch and PWM applications. |
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JMTI210P02A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTI210P02A with -20V drain-source voltage, -20A continuous drain current, and RDS(on) less than 16mΩ at VGS=-4.5V, available in TO-251-3L package. |
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SMD1210P020TF
