20KIJ Search Results

microtran t9311

Abstract: SC11044CN low pass filter TL062 SC11091 CA3041 "sierra semiconductor" modem LM386 dgg2 1 phase SCR TRIGGER PULSE TRANSFORMER CCITTV21
Contextual Info: SIERRA SEMICONDUCTOR CORP 54E D • □ □ □ □ □ Sendfax is a registered trademark of Sierra Semiconductor Corporation. 28-PIN DIP PACKAQE □ □ □ □ □ □ □ 2225/2100 Hz tone detector Contains an on-chip hybrid Analog, digital, and remote

Contextual Info: Octal Sample-and-Hold with Multiplexed Input SNIP-08 A N A LO G D E V IC E S □ FEATURES • • • • • • • fast acquisition time. The SMP-08 has a typical linearity error of only 0.01% and can accurately acquire a 10-bit input signal to ±1/2 LSB in less than seven microseconds. The SMP-08's out­

Contextual Info: PU J1 2SK2470-01 MR N-channel MOS-FET tìU tìlE L T te U K FAP-II Series 300V > Features - 0,53ß 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Avalanche Proof

ti486

Abstract: TI-486
Contextual Info: Chapter 5 Electrical Specifications Electrical specifications for the T I486 are provided in this chapter. The specifications include electrical connection requirements for all package pins, maximum ratings, recommended operating conditions, dc electrical, and ac

Contextual Info: HARRIS SEMICOND SECTOR bflE D HARRIS SEMI CONDUCT OR REGISTRATION PENDING Currently Available as FRS9240 D, R, H • L»30EE71 0051200 TMT ■ 2N7319D, 2N7319H 2N7319H Radiation Hardened P-Channel Power MOSFETs November 1993 Package Features • HAS 7A, -200V, RDS(on) = 0.735Q

2wl1

Abstract: 2wl1 voltage 2wl1 IC OP177ap OP177 op177g pmi pmi op177 OP177AZ IFT01 4560N
Contextual Info: OP-177 ULTRA-PRECISION OPERATIONAL AMPLIFIER drift TCVo s of 0.1(jV /°C MAX, to elim inate the need for exte r­ nal VQS adjustm ent and increases system accuracy over te m ­ perature. FEATURES • U ltra-Low O ffset Voltage T a = 2 5 °C . 10|jV Max

52_0 ATAC

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR- BROWNd E ADS7809 1 www.burr-brown.com/databoolt/ADS7809.html 16-Bit 10 is Serial C M O S Sampling ANALOG-to-DIGITAL CO N VERTER FEATURES D ESCRIPTIO N • 100kHz SA M PLIN G RATE The ADS7809 is a complete 16-bit sampling analogto-digital using state-of-the-art CMOS structures. It

76137s

Abstract: 76137P TA7613
Contextual Info: interdi HUF76137P3, HUF76137S3S D atti S h e e t 75A, 30V, 0.009 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,

Contextual Info: ì li h a r r is U U I S E M IC O N D U C T O R FRE260D, FRE260R, FFÌE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 31 A, 200V, RDS on = 0.0800 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: JANSR2N7396 33 HÄf^as? Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.46012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

75639p

Abstract: 75639s 75639G HUF75639P3 HUF75639S3ST TA75639
Contextual Info: in te r« ! HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet O ctober 1999 S6A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs 4477.7 Features • 56A, 100 V These N-Channel power M O SFETs UWaBfr Fite N u m b e r are manufactured using the • Simulation Models

TDM 5510

Abstract: POWER MOSFET Rise Time 1000V NS v85 diode OM1N100SA OM1N100ST OM3N100SA OM3N100ST OM5N100SA OM6N100SA diode 35 a
Contextual Info: OM1N-IOOSA O M 5N 100S A O M 1N 100S T 0M 3N1OOSA O M 6 NIOOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • • • • Isolated Hermetic Metal Package Fast Switching

Contextual Info: O M 1N 100S A O M 5N 100S A O M 1N 100S T OM3N1QOSA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • Isolated Hermetic Metal Package Fast Switching • • •

XR2567CP

Abstract: XR-2567CP XR2567M XR-2567M XR2567CN 2567CP ob 2269 XR-2567 xr2567
Contextual Info: EX4R XR-2567 Dual Monolithic Tone Decoder PIN ASSIGNMENT GENERAL DESCRIPTION The XR-2567 is a dual monolithic tone decoder of the 567type that is ideally suited for tone or frequency decoding in multiple-tone communication systems. Each decoder of the XR-2567 can be used independently or both sec­

1000WV

Abstract: "Pressure Transducers" dynisco AC1222 IR Half-bridge 1000V
Contextual Info: AN ALO G D E V IC E S Wide Bandwidth Strain Gage Signal Conditioner 1B31 FEATURES Low Cost Complete Signal-Conditioning Solution Small Package: 28-Pin Double DIP Internal Half-Bridge Completion Resistors Remote Sensing High Accuracy Low Drift: ±0.25|iV/"C

cs453th

Contextual Info: CS-453 4.4A Injector Solenoid Driver D escription T h e C S -4 5 3 is a m o n o lith ic in te g ra t­ ed circu it d e sig n ed for m ed iu m cu r­ re n t solen oid d riv er ap p lica tio n s. Its ty p ica l fu n ctio n is to su p p ly full b a ttery v o lta g e to fu el in jecto r s for

Contextual Info: 7 vkiyjxivM 9-3786, Rev 2, 10/94 H ig h -S p e e d , L o w -V o lta g e , M ic ro p o w e r Op A m p s The MAX402/M AX403/MAX438/MAX439 micropower op amps combine high-speed performance with low-power operation. The MAX402/MAX403 are compensated for unity-gain stability, while the MAX438/MAX439 are com­

circuit am modulation XR2206

Abstract: XR-2206cp XR2206CN 2206cp XR2206CP XR-2206 CIRCUIT xr 2206 FM modulation pin diagram of XR 2206 EXAR 2206 XR2206 monolithic function generator
Contextual Info: EXAR CORP SDE » • 3MS5blfi 000 5 b0 7 007 * E X R XR-2206 T - 50- Of Monolithic Function Generator PIN ASSIGNMENT GENERAL DESCRIPTION The XR-2206 is a monolithic function generator inte­ grated circuit capable of producing high quality sine, square, triangle, ramp, and pulse waveforms of highstability and accuracy. The output waveforms can be

sc11006

Abstract: sc11006cn SC11006CV SC11019CN QPSK telephone modem schematic ic lm324 st make EM-188 This AGC application requires one LM324 carrier recovery PSK 1800 Hz
Contextual Info: SI ER RA S E M I C O N D U C T O R CORP V SIERRA SEMICONDUCTOR S4E I> • 0 2 4 2 0 1 0 0 0 0 1 Ö2 Ö ÔT4 " T ^ v □ Integrated DTMF/Guard Tone Generators, call progress monitor □ All loopback diagnostics □ Programmable audio port 28-PIN DIP PACKAGE

3055L

Abstract: TA49158
Contextual Info: integrai RFT3055LE D ata S hee t 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those ot LSI circuits, gives

Ast1 11 relay

Abstract: Voltage Output LOW-Side Measurement Current Shunt Monitor IC5010
Contextual Info: MIC5010 Full-Featured High- or Low-Side MOSFET Driver General Description Features 7V to 32V operation Less than 1|iA standby current in the “OFF” state Internal charge pump to drive the gate of an N-channel power FET above supply MIL-STD-883 Method 5004/5005 version available

0255Q

Contextual Info: H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 12A.200V, RDS(on) = 0.255Q TO-257AA • Second Generation Rad Hard MOSFET Result*'From New Design Concepts

Contextual Info: FU JI 2SK2469-01 MR N-channel MOS-FET l â 'U M s u t J c U K FAP-II Series 300V > Features - in 5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications

2SK1112

Abstract: S2-5V relay transistor 2sk1112
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1112 Field Effect Transistor Silicon N Channel MOSType L2-t>MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Fe a tu re s • 4-Volt Gate Drive • Low Drain-Source ON Resistance