75639p
Abstract: 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UFA 639 , UFA 639 UFA 639 S bt A, 0V, 25 m, anraF wer OSTs) utho 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the
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AN9321
Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
Contextual Info: HUFA75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding
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Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
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R4851
Abstract: AN9321 AN9322 HUFA75639S3R4851 TB334
Contextual Info: HUFA75639S3R4851 Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UFA 639 R48 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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75639p
Abstract: 75639s 75639G HUF75639P3 HUF75639S3ST TA75639
Contextual Info: in te r« ! HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet O ctober 1999 S6A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs 4477.7 Features • 56A, 100 V These N-Channel power M O SFETs UWaBfr Fite N u m b e r are manufactured using the • Simulation Models
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AN7254
Abstract: AN7260 AN9321 AN9322 HAF70009 TB334
Contextual Info: HAF70009 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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75639p
Abstract: 75639s 75639G 75639 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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Contextual Info: HUFA75639S3R4851 TM Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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75639p
Abstract: 75639g 75639 HUF75639S3S equivalent 75639S HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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75639s
Abstract: 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 39G UF75 9P3, UF75 9S3 bt A, 0V, 25 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
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75639p
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.3 Features 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
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huf75639g3huf75639p3huf75639s3huf75639s3s+21-800-4-harr75639p
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75639p
Abstract: 75639G
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3, HUF75639S3S Semiconductor October 1998 Data Sheet 53A, 100 V, 0.028 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.3 Features • 53A,100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
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75639p
Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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AN7254
Abstract: AN9321 AN9322 HUF75639S3R4851 TB334
Contextual Info: HUF75639S3R4851 Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET Title UF7 39S 485 bt A, 0V, 25 m, This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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75639p
Abstract: 75639g
Contextual Info: HUFA75639G3, HUFA75639P3, HUFA75639S3S TM Data Sheet November 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4961 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology
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75639P
Abstract: HUF75639P3 75639G 75639S HUF75639G3 HUF75639S3S HUF75639S3ST TB334
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet April 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.5 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process.
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75639s
Abstract: 75639P 75639 75639G HUF75639G3 HUF75639P3 HUF75639S3 HUF75639S3S HUF75639S3ST TB334
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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AN7254
Abstract: AN9321 AN9322 HUF75639S3R4851 TB334
Contextual Info: HUF75639S3R4851 Data Sheet December 2001 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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75639p
Abstract: 30E2 75639g
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor January 1999 53A, 100 V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Num ber 4477.4 Features • 5 3 A ,1 0 0 V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This
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AN7254
Abstract: AN7260 AN9321 AN9322 HUF75639S3R4851 TB334
Contextual Info: HUF75639S3R4851 TM Data Sheet April 2000 File Number 4854 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per
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75639s
Abstract: 75639p
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 TM Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,
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