19E1 Search Results
19E1 Price and Stock
Vishay Intertechnologies M55342K06B19E1RS3Resistor: thick film; 19.1kΩ; 150mW; 2.03x1.27x0.51mm |
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M55342K06B19E1RS3 | 894 | 175 |
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Lanberg CA-C19E-10CC-0018-BKCable; IEC C19 female,IEC C20 male; PVC; Len: 1.8m; black |
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CA-C19E-10CC-0018-BK | 46 | 1 |
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KEMET Corporation ESD-R-19E-1Ferrite: toroidal; Øint: 10.7mm; Øout: 19mm; Ni-Zn ferromagnetic |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ESD-R-19E-1 | 80 |
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ESD-R-19E-1 | 603 |
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ESD-R-19E-1 | Bulk | 98 | 1 |
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ESD-R-19E-1 | 24 Weeks | 800 |
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Advanced Thermal Solutions Inc ATS-19E-107-C3-R1PUSH PIN HS ASMBLY,SUPER FINE-PITCH,XCUT - Trays (Alt: ATS-19E-107-C3-R1) |
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ATS-19E-107-C3-R1 | Tray | 8 Weeks | 25 |
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ATS-19E-107-C3-R1 | 25 |
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Advanced Thermal Solutions Inc ATS-19E-144-C3-R0PUSH PIN HS ASMBLY,COARSE-PITCH,STRAIGHT - Trays (Alt: ATS-19E-144-C3-R0) |
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ATS-19E-144-C3-R0 | Tray | 8 Weeks | 25 |
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ATS-19E-144-C3-R0 | 25 |
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19E1 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 19E12A Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 19 Load Current Max. (A)120m P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A |
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19e12a | |
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Contextual Info: 19E12A230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 19 Load Current Max. (A)120m P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A |
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19e12a230 | |
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Contextual Info: TECHNICAL DATA SHEET SMP 19K203-270L5 RIGHT ANGLE JACK All dimensions are in mm; tolerances acc. ISO 2768 m-H Interface According to MIL-STD-348A, Fig. 326 Documents Assembly instruction 19E11 Material and plating RF_35/12.04/3.0 Connector parts Center contact |
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19k203-270l5mil-std-348a19e11d-84526+1 | |
1S537
Abstract: Scans-0017320 xray philips Geiger-muller tube 1j5
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OCR Scan |
1s537scans-0017320xray philipsgeiger-muller+1 | |
01E16
Abstract: 02A16 08D16 08C16 09A16 02a16 021 03A16 04B16 V18Z1 DA16
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m35074-xxxsp20-pinm35074m35074-002sp+13 | |
75639p
Abstract: 75639g 75639 75639S 19E1 HUFA75639G3 HUFA75639P3 HUFA75639S3S HUFA75639S3ST TB334
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hufa75639g3hufa75639p3hufa75639s3s75639p+6 | |
AN9321
Abstract: AN9322 HUFA75639S3R4851 TB334 TC217
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hufa75639s3r4851115opmentan9321an9322+2 | |
Acopian Power Supply Model A24H1200
Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
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acopian power supply model a24h1200acopian db12-30acopian power suppliestransistor marking code wm9+6 | |
RAS 0510 SUN HOLD
Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
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mid-1990sras 0510 sun holdrelay ras 1210sun hold ras 0510+7 | |
TN-58-11Contextual Info: ADVANCE l^ ld R O N 64K X MT58LC64K16/18E1 16/18 SYNCBURST SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • Fast access times: 8.5, 9,10 and Tins Fast OE# access time: 5ns |
OCR Scan |
mt58lc64k16/18e1100-leadmt5slc64k1tn-58-11 | |
OPA671M
Abstract: R924
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opa671m724e31204e-69526e-6+5 | |
SLG8SP587V
Abstract: SLG8SP587 LA5511P 216-0729042 BCM57780 ALC669X LA-5511P TPS51125 hm55 9LRS3199
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a5511max17028slg8sp587vslg8sp587+8 | |
ALC271X
Abstract: alc271x audio rt8205e RT8205EGQW KB930 kb930qf KB930QF A1 ENE KB930QF A1 LA-6901P RTM890N-631-VB-GRT
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la-6901palc271xalc271x audiort8205e+6 | |
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Contextual Info: 48 AM S/UNI 12xJET ASSP Telecom Standard Product Data Sheet Register Description Released be r, 20 04 07 :3 1: PM5383 y, 14 Se pt em S/UNI® 12xJET in er In co n Tu es da Saturn® User Network Interface Device for J2/E3/T3 Proprietary and Confidential Released |
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12xjetpm5383pmc-2012190 | |
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CORE i3 ARCHITECTURE
Abstract: Cpu Core i7 1186D core i3 core i7 alu I3 CPU IA15 S1C63000 jrc 1001b x0s7
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mf855-03as1c63000e-08190core i3 architecture+8 | |
ksd 9700
Abstract: 9F56 5A0B 579a CXD2724Q 7AA4 diode 36b3 e32f CXD2724AQ-1 F32D
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cxd2724aq-180pinqfp-80p-l01qfp080-p-1420+10 | |
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Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet N-Channel UltraFET Power MOSFET 100 V, 56 A, 25 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding |
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huf75639g3huf75639p3huf75639s3shuf75639s3 | |
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Contextual Info: ADVANCE M IC R O N I 128K TECHUOLOCV INC SYNCHRONOUS SRAM X M T58LC128K16/18E1 16/18 SYNCBURST SRAM 128Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • Fast access times: 8 .5 ,9 ,1 0 and 11ns |
OCR Scan |
t58lc128k16/18e1100-leadmt58lc120k16/18610q227flh | |
ksd 9700
Abstract: 5A0B e729 D2B2 ne5522 E93D CP 8113 5b1c 7900 80pin diode 36b3
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cxd2719q80pinqfp-80p-l01qfp080-p-1420+11 | |
ECH84 tube
Abstract: ECH84 Ech-84 rs tube liaj
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OCR Scan |
ech84ech84 tubeech-84rs tube+1 | |
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Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S Semiconductor Data Sheet June 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs F ile N u m b er 4477.6 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. |
OCR Scan |
huf75639g3huf75639p3huf75639s3s54e-2+6 | |
ksd 9700
Abstract: CXD2724Q SQC06 SQD15 5b1c ne5522 5A0B CXD2724AQ-1 SQC14 2F18
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cxd2724aq-180pinqfp-80p-l01qfp080-p-1420+10 | |
0C81
Abstract: 01B16 0F216 1A31 1E71 DA16 M35074-002SP M35074-XXXSP 12A16 05C16
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16-bit24-bit0c8101b16+8 | |
1N44H
Abstract: 1a5ah 1178H 1N60H 1171H 1A86H 0m02 1b7ah 19C1H 1N14H
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spectra-4x155pm53164x155pmc-1990822+11 | |