20DEG. Search Results

GLC2518T4R7M

Abstract: GLC2518T220K GLC2518 TDK 47uh GLC2518T100K GLC2518T470K GLC2518T4 GLC2518T101K GLC2518T1R0M GLC2518T2R2M
Contextual Info: Electrical Characteristics [GLC2518Type] Inductance ITEM Rdc[ohm] Idc[mA] & L:10%Down L:20%Down temp. has to 20Deg.C Tolerance Max. Max. Max. GLC2518T1R0M 1.0µH±20% 0.08±30% 850 - 980 GLC2518T2R2M 2.2µH±20% 0.13±30% 650 - 750 GLC2518T4R7M 4.7µH±20%

LR82A

Contextual Info: SMD Type Large-Current Power Inductors MPLC Series [RoHS [RoHS Compliant] Compliant] ･ Precautions see page 83 Inductance at 100kHz, 1mA （ H） 1.0±20% 1.5±20% 2.2±20% 3.3±20% 4.7±20% 1.0±20% 1.5±20% 2.2±20% 3.3±20% 4.7±20% Model MPLC0730L1R0

VD F1 SMD

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm

SMM5845V1

Abstract: MMIC marking code U
Contextual Info: SMM5845V1B K-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=22.0dB (typ.) Broad Band:21.2 to 23.6GHz Impedance Matched Zin/Zout=50ohm Small Hermetic Metal-Ceramic SMT Package(V1B) DESCRIPTION The SMM5845V1B is a MMIC amplifier that contains a four-stage

MGF0951P

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:

42AA

Abstract: MGF0952P mgf09
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:

MGF0951P

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:

c id

Abstract: 42AA MGF0952P
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history:

Contextual Info: VCO specification preliminary 1/2 1.APPLICATION LAN 2.PART No. SV2.5WL0001 3.DIMENSIONS G G OUT SV2.5 WL0001 ● SE 371 VC G G VB Max 2.0 G SIDE VIEW 7.8 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NOTE:There is no mark of terminals on the case.

SV259

Abstract: SV259PH0010
Contextual Info: VCO 1.APPLICATION PHS specification preliminary 1/2 IF 2.PART No. SV259PH0010 3.DIMENSIONS NC G OUT SV259 PH0010 ● SE 371 G VB max3.5 VC SIDE VIEW 10.0 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NC : GROUND NOTE : There is no mark of

c5201

Abstract: VOLTAGE DEPENDENT RESISTOR Resistor R002 R003
Contextual Info: Subject Spec. No. 151-RJM-E01MM Low Resistance Value Chip Resistor Part No. ERJM1W 10 - 1 1.Dimension ERJM1WT type ERJM1WS type a a W W L L T 1 3) 2) T 1) 4) 1) Protective Coating 2) Resistive Element Resin Alloy Metal L ERJM1WT ERJM1WS 3) Terminal Metal

60Ghz

Abstract: MGF0915A a4013
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm

4 pin 9v

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm

balun 50 ohm 100 ohm

Abstract: CBA4711 E507 LTCC X band
Contextual Info: LTCC BALUN PRODUCTS 5 GHz Multilayer Ceramic Balun 2012 29th 2012/5GHz 50-100ohm Multilayer Ceramic Balun BY / 製定者 CHECK ` S.U.Hong C.T. Lee SUPER / 原圖編號 J.S. Hsieh , Dec. 2004 Rev.3 CBA4711714015004K, TLL.SH / 共頁 12 DATE / 日期 PAGE/

CFL4111

Abstract: LTCC X band LTCC GHz
Contextual Info: LTCC FILTER PRODUCTS 2.45 GHz Multilayer Ceramic Band Pass Filter 2520 7th, Jul.2004 Rev.1 2520/2.45GHz Multilayer Ceramic Band Pass Filter BY / 製定者 CHECK ` J.S. Hsieh SUPER / 原圖編號 C.T. Lee CFL4111 713 05 2453K TLL.SH/ 共頁 10 DATE / 日期

0951P

Abstract: MGF0951P 60Ghz mitsubishi mgf
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm

MPLCG0530

Abstract: nec 2012 MPLCG0530L1R5 50/PLT-02, NEC Tokin
Contextual Info: 03 Vol. Large-Current Power Inductor MPLCG Series [RoHS Compliant] Inductance ȐH at 100kHz Model DC resistance RDC(mȑ)max. Irms ※1 (Ref.) Rated Current(A) Isat ※2 (Ref.) MPLCG0530LR22 0.22±20% 3.7 14.1 10.2 MPLCG0530LR33 0.33±20% 7.3 10.3 8.9 MPLCG0530L1R0

MGF0921A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0921A － － Sample history:

SV245

Contextual Info: VCO specification preliminary 1/2 1.APPLICATION RF-ID Japan 2.PART No. SV2.45ER0002 3.DIMENSIONS G G OUT SV2.45 ER0002 ● SE 371 VC G G VB Max 2.0 G SIDE VIEW 7.8 OUT : RF OUTPUT VB : POWER SUPPLY VC : CONTROL VOLT. G : GROUND NOTE:There is no mark of terminals on the case.

lcd inverter 7 pin diagram

Abstract: sx19v001 inverter circuit diagram Wiring Diagram of CN1 in inverter FLUKE 75 sx19v001 hitachi inverter board LCD cfl circuit diagram cfl lamp inverter circuit fluke 75 meter
Contextual Info: M/S HEU DATE: 31.May.2007 Design Department Ome Manufacturing Operation Hitachi Lighting,Ltd 16-2,shinmachi 6-chome,Ome-Shi Tokyo 198-8611,JAPAN TEL.0428-31-1204 FAX.0428-31-1224 CUSTOMER’S ACCEPTANCE SPECIFICATIONS (Backlight Inverters for cold cathode

cfl Inverter

Abstract: fluorescent wiring diagram FLUORESCENT LIGHTING Inverter lcd inverter 7 pin diagram INVC818 28w cfl inverter board LCD cfl circuit diagram inverter dc to ac wind inverter
Contextual Info: M/S HEU DATE: 31.May.2007 Design Department Ome Manufacturing Operation Hitachi Lighting,Ltd 16-2,shinmachi 6-chome,Ome-Shi Tokyo 198-8611,JAPAN TEL.0428-31-1204 FAX.0428-31-1224 CUSTOMER’S ACCEPTANCE SPECIFICATIONS (Backlight Inverters for cold cathode

MGF0915A

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:

MGF0951P

Abstract: dsae001680
Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0951P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0951P － － Sample history:

MGF0952P

Contextual Info: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0952P for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0952P － － Sample history: