2020 MOSFET Search Results

ovc Bluetooth

Abstract: marking po3 mosfet UHC124 hcfs mosfet 434h mosfet Transdimension 400H AT43312A 800-FFFH 95000
Contextual Info: UHC124 USB Host Controller Data Sheet TransDimension Inc. 2 Venture Irvine, CA 92618 www.transdimension.com Phone: 949 727-2020 Fax: (949) 727-3232 sales@transdimension.com techsupport@transdimension.com TransDimension Document Number: MU1002 Rev. 1.05, February, 2002

SLUP230

Abstract: DESIGN RULE CHECK PCB AN-2020 JESD51-1 double sided pcb, thermal via ca jt JESD51-11
Contextual Info: National Semiconductor Application Note 2020 Marc Davis-Marsh April 15, 2010 Introduction can then be used to analyze the design in more detail. The listed reference material is home to additional data and many useful thermal calculators, covering material that is beyond

SLUP230

Abstract: JESD51-1
Contextual Info: National Semiconductor Application Note 2020 Marc Davis-Marsh June 14, 2010 Introduction can then be used to analyze the design in more detail. The listed reference material is home to additional data and many useful thermal calculators, covering material that is beyond

IRFB22

Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
Contextual Info: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E

600B

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S18100N MRF6S18100NBR1 MRF6S18100NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d

ATC100B0R5BT500XT

Abstract: MRF6S18100N multicomp chip resistor 12065C104KAT MRF6S18100NBR1 MRF6S18100NR1 A113 A114 A115 AN1955
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequenc ies from 1800 to 2000 MHz . S u i t a b l e f o r T D M A , C D M A a n d

T491C105K0

Abstract: mcr63v470m8x11 MRF6S19120H
Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MRF6S19120H

Contextual Info: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

C4532X5R1H475MT

Abstract: ATC100B0R5BT500XT C4532X5R1H TRANSISTORS J427 MRF6S18100N
Contextual Info: Document Number: MRF6S18100N Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

A114

Abstract: A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 2, 12/2008 N-Channel Enhancement-Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier

MRF6S19120H

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs LIFETIME BUY LAST ORDER 4 APR 09 LAST SHIP 3 OCT 09 MRF6S19120HR3 MRF6S19120HSR3 Designed for N - CDMA base station applications with frequencies from 1930

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and

T491X106K035AT

Abstract: A114 A115 AN1955 C101 JESD22 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors Nippon chemi
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19120HR3 MRF6S19120HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

*J532

Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

MRF8P20100HR3

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

NIPPON CAPACITORS

Abstract: MRF6S19140HR3 GRM55DR61H106KA88B Nippon chemi z9b1 GRM55DR61H106KA88B 10 uF
Contextual Info: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

A113

Abstract: A114 A115 AN1955 C101 JESD22 MRF7S19120N MRF7S19120NR1 T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 0, 9/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

J1112

Abstract: transistor J1112 MRF7S19120N A113 A114 A115 AN1955 C101 JESD22 MRF7S19120NR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 1, 1/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base

AN1955

Abstract: j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to

murata process

Abstract: CRCW12061001FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 3, 3/2011 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base

AN1955

Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to

0119A

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to

V10513

Abstract: 250GX-0300-55-22 AN1955 C1825C103J1GAC JESD22-A113 JESD22-A114 MRF7S19120N MRF7S19120NR1 T491D106K035AT
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19120N Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF7S19120NR1 Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base