200V 3A MOSFET Search Results

Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FRL9230D FRL9230H FRL9230R
Contextual Info: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
Contextual Info: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF

1E14

Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

integrated circuits equivalents list

Abstract: Rad Hard in Fairchild for MOSFET
Contextual Info: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

40842

Contextual Info: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IRF9622

Abstract: IRF9620 IRF9623 IRF9621 TB334
Contextual Info: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate

Contextual Info: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q

irf610 mosfet

Abstract: IRF610 power MOSFET IRF610 4V801
Contextual Info: IRF610 Data Sheet Title F61 bt 3A, 0V, 00 m, June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

2SK2887

Contextual Info: Transistors Switching 200V, 3A 2SK2887 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel

2E12

Abstract: 2N7311D 2N7311H 2N7311R
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9230 D, R, H 2N7311D, 2N7311R 2N7311H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 3A, -200V, RDS(on) = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

40841

Abstract: 40841 MOSFET fsl9230 MIL-S-19500 1E14 2E12 FSL9230D FSL9230R Rad hard MOSFETS in Harris
Contextual Info: S E M I C O N D U C T O R FSL9230D, FSL9230R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 3A, -200V, rDS ON = 1.50Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

F9622

Abstract: IRF9622 NP-Q40 F962
Contextual Info: HARRIS IR F9620, IRF9621 IR F9622, IRF9623 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 F e a tu re s Package T 0 -2 2 0 A B • -3A and -3.5A , -1 5 0 V and -200V • r D S O N TOP VIEW = 1 -5 0 and 2 .4 Cl • Single Pulse Avalanche Energy Rated

251C

Abstract: 2SK2715 2SK2887
Contextual Info: Transistors Small switching 200V, 3A 2SK2887 •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1 ) Low on-res¡stance. 2) High-speed switching. 6) Easy to use in parallel. 0.5±0.1 V CO-»i? at V gss = ± 3 0 V . Easily designed drive circuits. - 0.1

Contextual Info: ill H a r r is U U S E M I C O N D U C T O R 2N7311D, 2N7311R 2N731 1H REGISTRATION PENDING Currently Available as FRL9230 D, R, H . • Radiation Hardened P-Channel Power MOSFETs Decem ber 1992 Package Features • 3A, -200V, RDS(on) > 1.300 TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: Transistors Small switching 200V, 3A 2SK2887 •E x te rn a l dim ensions (Units: mm) •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 6 .5 ± 0.2 4) 2.3 2 ,+ o .a 3) W ide SOA (safe operating area). Gate-source voltage guaranteed at V gss= ± 3 0 V .

40841

Abstract: 40841 MOSFET
Contextual Info: m U J H a r r is S E M I C O N D U C T O R FSL9230D, FSL9230R w ' — v ^ W ^ Radiation Hardened, SEGR Resistant P-ChannelPowerMOSFETs June 1997 Features Package • 3A,-200V, rDS oN = 1-500 Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single Event

Contextual Info: h a r r i s F S L 9 2 3 S E M I C O N D U C T O R D , 7 F S L 9 2 3 R Radiation Hardened, SEGR Résistant P-Channel Power MOSFETs Ju n e 1 9 9 7 Features Package • 3A, -200V, rDS ON = 1.50S1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si)

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .

k1445

Abstract: ITR01407 K144 2SK1445LS ITR01406 ITR01408 ITR01409 ITR01410 TA-3431
Contextual Info: Ordering number : ENN3448B 2SK1445LS N-Channel Silicon MOSFET 2SK1445LS Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. Micaless package facilitating mounting. unit : mm 2078C [2SK1445LS]