200RN Search Results
200RN Price and Stock
Quectel Wireless Solutions Co Ltd SC200RNANB-E53-UGNDA- Tape and Reel (Alt: SC200RNANB-E53-UGNDA) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SC200RNANB-E53-UGNDA | Tape & Reel | 53 Weeks, 1 Days | 500 |
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SC200RNANB-E53-UGNDA | 22 Weeks | 500 |
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Quectel Wireless Solutions Co Ltd SC200RNANA-E51-TA0AA- Boxed Product (Development Kits) (Alt: SC200RNANA-E51-TA0AA) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SC200RNANA-E51-TA0AA | Box | 5 Weeks | 1 |
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Quectel Wireless Solutions Co Ltd SC200RNANA-E51-UGNDA- Tape and Reel (Alt: SC200RNANA-E51-UGNDA) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SC200RNANA-E51-UGNDA | Tape & Reel | 53 Weeks, 1 Days | 500 |
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Eaton Corporation TCF200RNClass CF Non-Indicating Fuse Time Delay 200A - Bulk (Alt: TCF200RN) |
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TCF200RN | Bulk | 11 Weeks, 3 Days | 1 |
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Flip Electronics BLF6G10LS-200RN:11LDMOS POWER TRANSISTOR - Trays (Alt: BLF6G10LS-200RN:11) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BLF6G10LS-200RN:11 | Tray | 13 Weeks | 60 |
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200RN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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1n3600
Abstract: 1N4150 1n3600 chip
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200rna1n36001n41501n4150-1+4 | |
BLF6G10LS-200RN
Abstract: BLF6G10-200RN RF35 A1118
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blf6g10-200rnblf6g10ls-200rn10ls-200rnrf35+1 | |
BLF6G10-200RN
Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb
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blf6g10-200rnblf6g10ls-200rn10ls-200rnrf35+1 | |
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Contextual Info: BLF6G05LS-200RN Power LDMOS transistor Rev. 1 — 11 May 2011 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. |
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blf6g05ls-200rn | |
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Contextual Info: BLF6G05LS-200RN Power LDMOS transistor Rev. 2 — 8 November 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 460 MHz to 470 MHz. Table 1. Typical performance |
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blf6g05ls-200rn | |
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Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance |
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blf6g10-200rnblf6g10ls-200rn10ls-200rn | |
AD1317
Abstract: AD1317KZ ADI317
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ad1317200mv/naadi3171470pf+2 | |
mj15052
Abstract: mj-15052 CFL UPS 45 W circuit schematic diagram MJ15052 Motorola schematic diagram UPS ica MJ15003 internal diagram power supply tester schematic diagram pulse generator MC14001 AT330 transistor MJ11032
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an930an930/dhull111111mj15052+9 | |
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Contextual Info: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win. |
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AD532D
Abstract: AD532H AD530 ADS30 ADS32 AD532 AD532J AD532K AD532S gilbert cell sum
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ad532kad532y2/10ad532d+7 | |
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Contextual Info: LM224/A, LM324/A, LM2902 LINEAR INTEGRATED CIRCUIT QUAD OPERATIONAL AMPLIFIERS The LM224 series c o n s is ts o f fo u r independent, high gain, inte rnally frequency com pensated operational am p lifie rs w hich were designed s p e c ific a lly to operate from a sin g le pow er s u p p ly over a w ide voltage |
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lm224/alm324/alm2902lm224+1 | |
MX536AJCWEContextual Info: y n y j x i y n 7Yue RMS-to-DC Converter _General Description _ _Features The MX536A and MX636 are true RMS-to-DC con verters. They feature low power and are designed to accept low level input signals from 0 to 7Vtros for the |
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mx536amx636200mvrm100mv+3 | |
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Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR IS S U E 3 - F E B R U A R Y 1995 FZT655 O m FEATURES * Low saturation voltage C O M P L E M E N T A R Y TY PE - FZT755 P A R T M A R K IN G D ET A IL - FZT655 B ABSOLUTE M A X IM U M RATINGS. SY M B O L |
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ot223fzt655fzt755500ma+4 | |
100ria
Abstract: 25V6K RN5305 2N4494
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2n3707mps37072n3708mps3708+10 | |
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hp 530 charging CIRCUIT diagramContextual Info: r r u r m TECHNOLOGY _ LTC1479 PowerPath C ontroller fo r Dual B attery Systems F€flTUft€S DCSCRICTIOn • Complete Power Path Management for Two Batteries, DC Power Source, Charger and Backup ■ Compatible with Li-Ion, NiCd, NiMH and Lead-Acid |
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ltc147936-leadltc1538-auxlt1620+7 | |
MX536AJCWEContextual Info: ykiyjxiyki 19-0824; Rev 1; 6/93 True RMS-to-DC Converter The MX536A and MX636 are true R M S -to-D C co n verters. T hey feature low pow er and are designed to a cce p t low level in p u t signals from 0 to 7Vrms fo r the MX536A and 0 to 200m Vrms fo r the MX636. Both |
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mx536amx636mx536ajcwe | |
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Contextual Info: HV21 S u p e r te x in c. 8-Channel High Voltage Analog Switch Ordering Information Package Options z z Q. CL > I > 24-pin ceramic* side-brazed DIP Die In waffle pack 24-pin plastic DIP 28-lead plastic chip carrier 140 V HV2114C HV2114X HV2114P HV2114PJ 160 V |
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24-pinhv2114chv2116chv2114x+5 | |
UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
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upc8236mrfe6vpm74 7 segment displaymounting and soldering of rf transistors+6 | |
CFW450
Abstract: S695 diode V4748 TUA4300P S695 Rectifier N4748 S695 csb456 AM2 Siemens metal detector diagram PI
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v66047-s695-a100-z1fl23sbosdd6d723v66047-s695-a30q-v1_+10 | |
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Contextual Info: HV22 Supertex inc. 8-Channel High Voltage Analog Switch Ordering Information_ Package Options V PP - V NN Die in waffle pack 28-pin plastic DIP 28-lead plastic chip carrier HV2216X HV2216P HV2216PJ 160V General Description Features |
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28-pin28-leadhv2216xhv2216p+4 | |
toko reel packaging SOT23
Abstract: diagram transistor tt 2140 internal diagram of ic 4017 toko reel packaging diode toko packaging specification SOT23 TOKO Packaging diode internal structure of ic 4017 tip 2905 transistor
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db4-k012toko reel packaging sot23diagram transistor tt 2140internal diagram of ic 4017+5 | |
MX536AJN
Abstract: TRUE RMS-TO-DC CONVERTER MX536AJCWE MX536AKCWE MX536A MX536AJD MX536AJH MX536AJQ MX536AKD MX636
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mx536amx636200mvrmsmx536ajn+7 | |
neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
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10khz13khz2x10khz-19khz3x13khz-38khz+14 | |
2N1103
Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
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buy56-4buy56-6buy56-10buy72-4+12 | |