VJ1206Y224KXB Search Results

BLF6G10LS-200RN

Abstract: BLF6G10-200RN RF35 A1118
Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLF10M6200; BLF10M6LS200 Power LDMOS transistor Rev. 1 — 1 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF6G10-200RN

Abstract: BLF6G10LS-200RN RF35 vj1206y224kxb
Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 01 — 19 January 2009 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 688 MHz to 1000 MHz. Table 1. Typical performance

Contextual Info: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance

vj1206y224kxb

Abstract: BLF6G10LS-200R RF35
Contextual Info: BLF6G10LS-200R Power LDMOS transistor Rev. 01 — 21 January 2008 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance