200FJS Search Results

Contextual Info: Quad 150 MHz Rail-to-Rail Amplifier AD8044 ANALOG DEVICES FEATURES Single AD8041 and Dual AD8042 Also Available Fully Specified at +3 V, +5 V, and ±5 V Supplies Output Swings to Within 25 mV of Either Rail Input Voltage Range Extends 200 mV Below Ground No Phase Reversal with Inputs 1 V Beyond Supplies

DC-361

Contextual Info: KMM372V213BK ELECTRONICS DRAM Module KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification - KMM372V213BK 2048 cycles/Q2ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) • Fast Page Mode Operation

29V640

Contextual Info: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

TCA 720

Abstract: m59400 KM41C4000BJ
Contextual Info: KMM594000B DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAc *RC KMM594000B-6 60ns 15ns 110ns KMM594000B-7 70ns 20ns 130ns KMM594000B-8 80ns 20ns 150ns Fast Page Mode operation CAS-before-RAS refresh capability

ee1625

Abstract: C254D 3D47T
Contextual Info: KM416C254DT ELECTRONICS CMOS DRAM 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

M514402

Abstract: 20-PIN 26-PIN ZIP20-P-400-W1 M514402B
Contextual Info: O K I Semiconductor MSM5 1 4402B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402B/BL is a new generation dynam ic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the MSM514402B/BL is OKI's CMOS silicon gate process technology.

mcac

Contextual Info: KM41 6C256DT ELECTRONICS CMOS D R A M 2 5 6 K x 1 6 B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KMM5321200AW D RAM Module ELECTRONICS KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS

Contextual Info: KMM5321204AW ELECTRONICS DRAM Module KMM5321204AW/AWG EDO Mode 1Mx32 DRAM SIM M , 5V, 1K Refresh using 1M x 16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321204AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321204AW consists of two CMOS

U18 524

Contextual Info: KMM372F3200AK/AS KMM372F3280AK/AS DRAM MODULE KMM372F3200AK/AS & KMM372F3280AK/AS Fast Page with EDO Mode 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V G ENER AL D ES C R IPTIO N FEATURES The Samsung KMM372F320 8 0A is a 32M bit X 72 Dynamic RAM high density memory module. The

Contextual Info: KM41C1002C CMOS DRAM s 1,048,576x1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • P erform ance range: The S am sung KM41C1002C is a CMOS high speed 1,048,576 x 1 D ynam ic Random A ccess M em ory. Its de­ sign is op tim ize d fo r high perform ance ap p lica tio n s

52C50

Abstract: ibm52
Contextual Info: STANDARD MICROSYSTEMS CORPORATION COM52C50 PRELIMINARY TWINAX Interface Circuit TIC P IN C O N F IG U R A T IO N FEATURES □ Conforms to IBM 5250 Standard used in IBM System /36 and /38. d 2 C ~1 d3 □ Operates at 1 Mbps Data Rate Wr □ Transmits and Receives M anchester II Encoded Data

Contextual Info: KM416V256DT CMOS D R A M ELECTRO NICS 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: K M 44C4005BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.

Contextual Info: D f f lT D ^ L [ R iE L E ^ f > E Final Electrical Specifications r j i LTC1096L/LTC1098L m TECHNOLOGY Low Voltage, Micropower Sampling 8-Bit Serial I/O A/D Converters December 1995 FCRTURCS D C S C R IP T IO n • Specified at 2.65V Minimum Supply ■ Maximum Supply Current: 80jjA

GG3C

Abstract: KM44V16100AK
Contextual Info: KMM372V3200AK2 D R A M Modul e ELECTRONICS KMM372V3200AK2/AS2 & KMM372V3280AK2/AS2 Fast Page Mode 32Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V320 8 OA is a 32M bit x 72 Dynamic RAM high density memory module. The

C254D

Contextual Info: KM416V254DT ELECTRONICS CMOS DR AM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,

KM29V64001T

Abstract: v6400
Contextual Info: KM29 V 6 4 0 0 1 T Fl ash ELECTRONICS 8 M x 8 B i t NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The KM29V64001T/R is a 8M 8,388,608 x8 bit NAND Flash memory with a spare 256K(262,144)x8 bit. Its NAND cell provides the most cost-effective solution for

AX851

Abstract: 4.5V TO 100V INPUT REGULATOR max853esa MAX850ISA
Contextual Info: y k i y j x i y i / i Low-Noise, Regulated, Negative C h a r g e - P u m p P o w e r S u p p l i e s f or G a A s F E T Bi as Description The M A X 8 5 0 -M A X 8 5 2 o ffe r b o th p re s e t -4.1V and a d ju s ta b le (-0 .5 V to -9 .0 V ) o u tp u t v o lta g e s . T h e