0D31B Search Results

800T

Contextual Info: 30E » • 715^37 0D31b3D » ■ £ ÿ j SGS-THOMSON HOMSON UHCTB BJ®8 S - p 2 -S -IS BTA/BTB 06 T G S - THOMSON SENSITIVE GATE TRIACS ■ GLASS PASSIVATED CHIP ■ Ig t SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION -> BTA SERIES INSULATING VOLTAGE

bta 600b

Abstract: BTB 12 BTA 12 400 B 200B 400B 600B 700B 800B T2515 12537
Contextual Info: 3DE D • 7^2^237 0D31b7b T S G S -T H O M S O N [i^DOœitLI^Tr^OlMOOS ^t -z s - i s B T A /B T B 1 2 B S G S-THOMSON TR IA C S ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 10 V/|is ■ Igt SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION ->

DSP101

Abstract: DSP202 74HC163
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - BROW N i E DSP101 DSP102 1 DSP-Compatible Sampling Single/Dual ANALOG-TO-DIGITAL CONVERTERS FEATURES DESCRIPTION • ZERO-CHIP INTERFACE TO STANDARD DSP ICs: AD, AT&T, MOTOROLA, Tl The DSP101 and DSP102 are high performance sam­

mc 79L

Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N S E SDM862 SDM863 SDM872 SDM873 1 16 Single Ended/8 Differential Input 12-BIT DATA ACQUISITION SYSTEMS FEATURES • POWER PLANT MONITORING • COMPLETE 12-BIT DATA ACQUISITION SYSTEM IN A MINIATURE PACKAGE

Contextual Info: HB56SW464DB -6B/7B 4,194,304-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-583B Z Rev. 2.0 Jan. 10, 1997 Description The HB56SW464DB is a 4M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 16 pieces of 16-Mbit DRAM (HM51W16405B) sealed in TCP package and 1

b1l3

Abstract: CV7C136 CY7C1361V25 CY7C1363V25 CY7C1365V25 7C1361-133
Contextual Info: ^ _ 5r^ C Y P R F .S S CY7C1361V25 CY7C1363V25 CY7C1365V25 PBEUm m m 256K x36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32/512K x 18 common I/O » Fast clock-to-output times — 7.5 ns lor 117-MHz device

ge 8513

Contextual Info: 5 b E *57 7 D ^ 2 3 ? Q G a ^ S 'ib SCS-THOMSON S G T ? *! • S G T H S -T H O M S O N TSG8513 iL O T -¿ ¥ -¿ > 5 ~ SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ CHEBYCHEVTYPE ■ 8TH ORDER ■ STOPBAND ATTENUATION : 69dB typ AT 2 x Fc ■ PASSBAND RIPPLE : 0.15dB (typ)

Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

29V640

Contextual Info: KM29 V 64000 R Flash ELECTR ONICS 8Mx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 8M +128K bit x 8bit - Data Register : (512+ 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: bb 5 3 *i31 ttOSlbflH ODD P hilips Sem iconducto APX Product specification NPN 1 GHz video transistor ^ BFQ161 N AUER PHILIPS/MSCRETE b'JE » PINNING FEATURES • Low output capacitance 1 DESCRIPTION PIN • High gain bandwidth product 1 base • High current applicability

TRIAC BTA-SERIES

Abstract: bta 700 BTA 18 800
Contextual Info: _ m 3DE D r z 7 Ä T # _ ~T'-'ZS?'\5 7 C12CJ237 OÜBlbCm 7 • S C S - T H O M S O N M û Iï t L iig T m « ! B T A /B T B 0 6 A S G S-THOMSON SENSITIVE GATE TRIACS GLASS PASSIVATED CHIP I g t SPECIFIED IN FOUR QUADRANTS AVAILABLE IN INSULATED VERSION ->

24MHZ

Abstract: 48MHZ PC11 W48S111 W48S111-14
Contextual Info: W CYPRESS PRELIMINARY W48S111-14 Spread Spectrum Desktop/Notebook System Frequency Generator Features Key Specifications • Maximized EMI suppression using Cypress’s Spread Spectrum Technology • Reduces measured EMI by as much as 10 dB • l2C programmable to 133 MHz

btb 400c

Abstract: BTA SERIES triacs BTA TRIAC BTa 12 600c 400C 600C
Contextual Info: 30E D m 7^2^237 DG31b l2 b • fZ 7 ^ 7 # _ S G S -T H O M S O N IL IIO T M D ! B B T A /B T B 0 6 C s G S-TH0MS0N TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 5 V/^s ■ Igt SPECIFIED IN FOUR QUADFiANTS ■ AVAILABLE IN INSULATED VERSION ->

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only B U R R -B R O W N t! DAC650 1 E DEMO BOARD AVAILABLE See Appendix A in CD O < Q 12-Bit 500MHz DIGITAL-TO-ANALOG CONVERTER FEATURES APPLICATIONS • 12-BIT RESOLUTION • DIRECT DIGITAL SYNTHESIS • 500MHz UPDATE RATE

CHN 517

Abstract: CH8F chn 248 Burr-Brown IC appendix c chn 442 68-PIN CH10 SDM516 SDM517 LSBC
Contextual Info: SDM516/517 PRELIMINARY INFORMATION SUBJECT TO CHANGE WITHOUT NOTICE DESCRIPTION • 16-BIT RESOLUTION TheSDM 516/517 are 16-channel, single-ended and 8chaimel differential data acquistion systems with 16-bit resolution, parallel outputs and programmable gains of

Contextual Info: m 3GE T> T^sa? DÜ31b7b T • f= 7 SGS-THOMSON ^ 7 # B _ s ¡LKSTTiMOOS_ B T A /B T B 1 2 B S G S-THOMSON TRIACS ■ GLASS PASSIVATED CHIP ■ EXCELLENT dv/dt c > 10 V/ns ■ I g t SPECIFIED IN FOUR QUADRANTS ■ AVAILABLE IN INSULATED VERSION ->

AW 55 IC

Contextual Info: N E C ELECTRONICS INC 3ÖE D • b427S25 ODBlbMM T ■ NECE M C -4 2 1 0 0 0 A 9 1 ,0 4 8 ,5 7 6 X 9 -B it CMOS Dynam ic RAM M odule NEC Electronics Inc. r ~ Description w ~ i 3 - i 7 Pin Configurations The MC-421000A9 is a fast-page, 1,048,576-word by 9-bit C M O S dynamic R A M module, designed to operate

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

Contextual Info: Advance Data Sheet February 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.110 Interface andTime-Slot Interchanger 1 Product Overview Programmable switching between local time-slots and H.100 bus, up to 256 connections

QML-38535

Abstract: 320C80-50 17306A TIL Display SMD AH MRI circuit xxmx
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA REV SHEET 55 56 57 58 59 60 61 62 63 64 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 REV SHEET REV

JHE-BTL70

Abstract: LH28F160BJHE-BTL70
Contextual Info: P r e l im i n a r y P r o d u c t S p f c ip ic a t io n s m x i-a m i a Integrated Circuits Group LH28F160BJHE-BTL70 Flash Memory 1 6 M 1 M x 1 6 / 2 M x 8 (Model No.: LHF16J07) Spec No.: FM996003 Issue Date: June 22, 1999 aia a ? cia a t m b s a te 3 •

BTA SERIES

Contextual Info: 3DE D f Z Ä T m 7 C12CJ237 OÜBlbCm 7 • 7 S G S -T H O M S O N # M û Iï t L iig T m _ ~ T ' - ' Z S ? ' \ 5 « ! B T A /B T B 0 6 A S G S-THOMSON SENSITIVE GATE TRIACS GLASS PASSIVATED CHIP I g t SPECIFIED IN FOUR QUADRANTS AVAILABLE IN INSULATED VERSION ->

2SB 731

Abstract: TSG8511 tup 631 TSG85
Contextual Info: SbE D • 7121237 0 G 3 lì204 157 ■ SGTH SCS-THOMSON S G S -T H O N S O N T S G 8511 IL iO T @ « S T - é V - O ? S W ITC H ED CAPACITOR MASK PROGRAMMABLE FILTER ■ ■ ■ ■ ■ ■ ■ CAUER TYPE 7TH ORDER STOPBAND ATTENUATION : 55dB typ PASSBAND RIPPLE : 0.1 dB (typ)

Contextual Info: HB56G164EJ Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-698A Z Rev. 1.0 Dec. 27, 1996 Description The HB56G164EJ belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The