200A 300V MOSFET Search Results
200A 300V MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TCK424G |
|
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK423G |
|
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK401G |
|
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E | Datasheet | ||
| TCK420G |
|
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet | ||
| TCK425G |
|
MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G | Datasheet |
200A 300V MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
200a 300v mosfetContextual Info: Provisional Dd.tsi Sh ôt PD*9.1198 1°R Rectifier IRGTDN200K06 "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail“ losses •Short circuit rated |
OCR Scan |
IRGTDN200K06 C-460 200a 300v mosfet | |
|
Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR |
Original |
MMIX1X200N60B3H1 IC110 110ns 10-30kHz IF110 MMIX1X200N60B3 | |
|
Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings |
Original |
MMIX1X200N60B3H1 IC110 110ns 10-30kHz IF110 MMIX1X200N60B3 | |
|
Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR |
Original |
IXXN200N60B3H1 IC110 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3 | |
ixxn200n60b3h1
Abstract: IXXN200N60B3 200n60
|
Original |
10-30kHz IXXN200N60B3H1 IC110 110ns OT-227B, E153432 IF110 50/60Hz 200N60B3 ixxn200n60b3h1 IXXN200N60B3 200n60 | |
|
Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode VCES IC110 VCE sat tfi(typ) IXXN200N60B3H1 = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
Original |
IC110 IXXN200N60B3H1 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3 | |
MMIX1X200N60B3H1Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings |
Original |
10-30kHz IC110 IF110 MMIX1X200N60B3H1 110ns MMIX1X200N60B3 MMIX1X200N60B3H1 | |
IXGN200N60B3
Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
|
Original |
IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16 | |
|
Contextual Info: GenX3TM 600V IGBT IXGB200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES |
Original |
IXGB200N60B3 IC110 183ns PLUS264TM 200N60B3 8-08-A | |
SOT-227B
Abstract: ixxn200n60 ixxn200n60c3h1 DS100511
|
Original |
20-60kHz IXXN200N60C3H1 IC110 OT-227B E153432 IF110 50/60Hz 200N60C3 1-05-12-A SOT-227B ixxn200n60 ixxn200n60c3h1 DS100511 | |
|
Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Sonic IXXN200N60C3H1 VCES IC110 VCE sat tfi(typ) Diode Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 600V 98A 2.1V 80ns E SOT-227B E153432 Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C |
Original |
IXXN200N60C3H1 IC110 20-60kHz OT-227B E153432 IF110 200N60C3 1-05-12-A | |
|
Contextual Info: VCES = 600V IC110 = 200A VCE sat ≤ 1.50V IXGN200N60B3 GenX3TM 600V IGBT Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E¦ Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IC110 IXGN200N60B3 5-40kHz OT-227B, E153432 200N60B3 8-08-A | |
200N60B3
Abstract: IXGN200N60B
|
Original |
IC110 IXGN200N60B3 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B | |
|
Contextual Info: Advance Technical Information PolarTM IGBT IXGQ 100N60PCD1 VCES IC25 With Anti-Parallel Diode For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VGES Continuous ±20 V VGEM Transient ±30 V 100 A 75 A 188 A 75 A ICM = 100 A = = Maximum Ratings |
Original |
100N60PCD1 | |
|
|
|||
C1019
Abstract: 200a 300v mosfet
|
OCR Scan |
IRGTDN200K06 C-1020 C1019 200a 300v mosfet | |
IXGQ100N60PBD
Abstract: IXGQ100N60PBD1 IXGQ100N60PB
|
Original |
100N60PBD1 IXGQ100N60PBD IXGQ100N60PBD1 IXGQ100N60PB | |
200N60B3Contextual Info: GenX3TM 600V IGBT IXGL200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient ±20 ±30 |
Original |
IXGL200N60B3 IC110 183ns 200N60B3 8-08-A | |
200n60
Abstract: IXGL200N60B3 200N60B3 100-A45
|
Original |
IXGL200N60B3 IC110 183ns 200N60B3 8-08-A 200n60 IXGL200N60B3 100-A45 | |
|
Contextual Info: Advance Technical Information XPTTM 650V GenX3TM w/ Sonic Diode IXYN100N65C3H1 VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 90A 2.30V 50ns SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings |
Original |
IXYN100N65C3H1 IC110 20-60kHz OT-227B, E153432 IF110 100N65C3 0-24-13-A | |
200a 300v mosfetContextual Info: bitemational Km Rectifier Provisional Data Sheet PD-9.1198 IRGTDN200K06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK V CE = 600V lc = 200A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses •Short circuit rated |
OCR Scan |
IRGTDN200K06 C-460 GD2025D 200a 300v mosfet | |
95A 640Contextual Info: APTC60AM242G Phase leg Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • CoolMOS |
Original |
APTC60AM242G 95A 640 | |
|
Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXR110N65B4H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 650V 70A 2.20V 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C |
Original |
IXXR110N65B4H1 IC110 10-30kHz ISOPLUS247TM IF110 110N65B4H1 02-04-13-B | |
|
Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
Original |
IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B | |
|
Contextual Info: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65C4H1 Extreme Light Punch Through IGBT for 20-60kHz Switching VCES IC110 VCE sat tfi(typ) = = ≤ = 650V 110A 2.35V 30ns E SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
Original |
IXXN110N65C4H1 20-60kHz IC110 OT-227B, E153432 IF110 110N65C4 1-30-13-A | |