200MBS Search Results
200MBS Price and Stock
TXC Corporation QTT325-19.200MBS-TTCXO Oscillators 3.2x2.5 Quartz Clipped Sine VCTCXO / Ceramic, 3.3V, +/-2.0ppm (-30 85C), AFC 1.4V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
QTT325-19.200MBS-T |
|
Get Quote | ||||||||
TXC Corporation QTT252-19.200MBS-TTCXO Oscillators 2.5x2.0 Quartz Clipped Sine VCTCXO / Ceramic, 3.3V, +/-2.0ppm (-30-85C), AFC 1.4V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
QTT252-19.200MBS-T |
|
Get Quote | ||||||||
TXC Corporation QTT216-19.200MBS-TTCXO Oscillators 2.0x1.6 Quartz Clipped Sine VCTCXO / Ceramic, 3.3V, +/-2.0ppm (-30-85C), AFC 0.9V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
QTT216-19.200MBS-T |
|
Get Quote | ||||||||
TXC Corporation QTT161-19.200MBS-TTCXO Oscillators 2.0x1.6 Quartz Clipped Sine VCTCXO / Ceramic, 3.3V, +/-2.0ppm (-30-85C), AFC 0.9V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
QTT161-19.200MBS-T |
|
Get Quote | ||||||||
TXC Corporation 7L-19.200MBS-TTCXO Oscillators 19.200MHz SMD TCXO 2.5 x 2.0 x 0.8mm |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
7L-19.200MBS-T |
|
Get Quote | ||||||||
|
7L-19.200MBS-T | Cut Tape | 3,000 |
|
Buy Now | ||||||
| 7L-19.200MBS-T | Tape & Reel | 3,000 |
|
Buy Now | |||||||
200MBS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
Fairchild part numbering
Abstract: GTLP16612 GTLP16616 GTLP16617 GTLP16T1655 GTLP17T616 GTLP18T612 GTLP6C816 GTLP6C816A GTLP6C817
|
Original |
200mbs30gbs24-leadgtlp16612+9 | |
ARM7 SPECIFICATIONS
Abstract: common features of ARM9 ARM7 pin diagram ARM7DMI atmel utopia 11 5643as algorith for watchdog timer ARM7 pin configuration ARM9 AES ARM946 PIN
|
Original |
arm946estm10/100t-base200mbs11a/b/g+11 | |
Sony IMX 183
Abstract: Sony sony cmos sensor imx 178 Sony imx 214 Sony ImX 252 sony cmos sensor imx 226 Sony IMX 219 CMOS Sony "IMX 219" CMOS sony IMX 322 cmos sony cmos sensor imx 185
|
Original |
sony imx 183sonysony cmos sensor imx 178sony imx 214+6 | |
W3E64M72S-XBXContextual Info: White Electronic Designs W3E64M72S-XBX ADVANCED* 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP 2.5V ±0.2V core power supply |
Original |
w3e64m72s-xbx64mx72333mbs512mbyte+1 | |
|
Contextual Info: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA , |
Original |
w3e32m64s-xbx32mx64266mb/s625mm2+1 | |
|
Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP |
Original |
w3e64m72s-xsbx64mx72333mbs512mbyte | |
|
Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM FEATURES BENEFITS Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP |
Original |
64mx72333mbsw3e64m72s-xsbx | |
VCCQ15Contextual Info: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* Package: • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply |
Original |
64mx16512mbw3e64m16s-xsbxvccq15 | |
W3E32M64S-XBXContextual Info: White Electronic Designs W3E32M64S-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA , |
Original |
w3e32m64s-xbx32mx64333mb/s625mm2+2 | |
W3E32M72S-XBXContextual Info: White Electronic Designs W3E32M72S-XBX 32Mx72 DDR SDRAM FEATURES Data rate = 200, 250, 266, 333Mbs Package: BENEFITS • 219 Plastic Ball Grid Array PBGA , 32 x 25mm 2.5V ±0.2V core power supply 2.5V I/O (SSTL_2 compatible) Differential clock inputs (CK and CK#) |
Original |
w3e32m72s-xbx32mx72333mbs | |
|
Contextual Info: INTEGRATED CIRCUITS NOTICE: SEE ATTACHED ERRATA WHICH FOLLOWS THIS DOCUMENT FOR INFORMATION REGARDING CHANGED SPECIFICATIONS PDI1394L21 1394 full duplex AV link layer controller Preliminary specification Supersedes data of 1998 Dec 16 Philips Semiconductors |
Original |
pdi1394l21iec61883 | |
transistor 2Fn
Abstract: Phychip IEC61883 LQFP144 PDI11394L40 PDI1394L40 PDI1394L40BE EIR25 PDI1394L40 1394
|
Original |
pdi1394l40transistor 2fnphychipiec61883+5 | |
16M x 16 DDR TSOP-66Contextual Info: White Electronic Designs W3E32M64SA-XBX 32Mx64 DDR SDRAM BENEFITS FEATURES DDR SDRAM rate = 200, 250, 266, 333Mb/s 41% SPACE SAVINGS vs. TSOP Package: Reduced part count • Reduced trace lengths for lower parasitic capacitance 219 Plastic Ball Grid Array PBGA , |
Original |
32mx64333mb/s625mm2w3e32m64sa-xbx+3 | |
PDI1394L40BE
Abstract: Phychip IEC61883 LQFP144 PDI11394L40 PDI1394L40
|
Original |
pdi1394l40pdi1394l40bephychipiec61883+2 | |
|
|
|||
|
Contextual Info: W3E32M72S-XB3X 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM. |
Original |
w3e32m72s-xb3x32mx72333mbs256mbyte+1 | |
|
Contextual Info: W3E64M16S-XSBX 64Mx16 DDR SDRAM FEATURES GENERAL DESCRIPTION DDR SDRAM rate = 200, 250, 266, 333* The 128MByte 1Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 2 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM. |
Original |
w3e64m16s-xsbx64mx16128mbyte512mb+3 | |
|
Contextual Info: W3E64M72S-XBX 64Mx72 DDR SDRAM GENERAL DESCRIPTION FEATURES The 512MByte 4Gb DDR SDRAM is a high-speed CMOS, dynamic random-access, memory using 9 chips containing 536,870,912 bits. Each chip is internally configured as a quad-bank DRAM. Data rate = 200, 250, 266 and 333Mbs* |
Original |
w3e64m72s-xbx64mx72512mbyte333mbs+1 | |
|
Contextual Info: W3E32M72S-XSBX 32Mx72 DDR SDRAM FEATURES GENERAL DESCRIPTION Data rate = 200, 250, 266, 333Mbs* The 256MByte 2Gb DDR SDRAM is a high-speed CMOS, dy nam ic ran dom-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a quadbank DRAM. |
Original |
w3e32m72s-xsbx32mx72333mbs256mbyte+1 | |
|
Contextual Info: White Electronic Designs W3E64M72S-XSBX 64Mx72 DDR SDRAM BENEFITS FEATURES Data rate = 200, 250, 266 and 333Mbs* 66% Space Savings vs. TSOP Package: Reduced part count • 219 Plastic Ball Grid Array PBGA , 25 x 32mm 55% I/O reduction vs TSOP |
Original |
64mx72333mbs | |
|
Contextual Info: IBM21S650PFA 1394 Serial Bus Link Layer PCI Controller Features • • • • • Fully IEEE 1394-1995 compatible General purpose IEEE 1394 Host Controller Asynchronous and isochronous capability Data rates: S100, S200, or S400Mb/s Standard Link-PHY protocol and an Isolation |
Original |
ibm21s650pfas400mb/s33mhz | |
EN61326-1
Abstract: EN-61326-1 100Mbs
|
Original |
rj-45dw200206en61326-1en-61326-1+1 | |
|
Contextual Info: White Electronic Designs W3E64M16S-XNBX 64Mx16 DDR SDRAM FEATURES DDR SDRAM rate = 200, 250, 266, 333* Package: BENEFITS • 60 Plastic Ball Grid Array PBGA , 10mm x 12.5mm x 1.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply |
Original |
64mx16512mb200mbs250mbs+3 | |
Sn63pB37 tds
Abstract: W3E32M64S-XSBX TSOP66
|
Original |
w3e32m64s-xsbx32mx64sn63pb37 tdstsop66 | |
PDI1394L40BE
Abstract: PDI1394L40 1394
|
Original |
pdi1394l40pdi1394l40bepdi1394l40 1394 | |