2007V Search Results

1020 mosfet

Abstract: LTP50N06
Contextual Info: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 22mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V

Dual N-Channel MOSFET SOP8

Abstract: LT4936
Contextual Info: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high

P-Channel mosfet 40V

Abstract: Vgs 40V mosfet
Contextual Info: LT4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)

1020 mosfet

Abstract: LTP50N06
Contextual Info: LTP50N06 N-Channel 60V Power MOSFET VDS=60V Vgs@10V, RDS ON ≦ 20mΩ FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)

20107

Contextual Info: LT4544 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544 is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)

mosfet tv lcd

Contextual Info: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)

LT4542C

Contextual Info: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)

Marking Code k72

Abstract: code k72 k72 diode K72 marking diode LT2N7002D
Contextual Info: LT2N7002D N-Channel Power MOSFET – ESD GENERAL DESCRIPTION FEATURES The LT2N7002D is the N-Channel logic enhancement mode power ● Simple Drive Requirement field effect transistors are produced using high cell density , DMOS ● Small Package Outline trench technology. This high density process is especially tailored to

Contextual Info: LT4544C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4544C is the N- and P-Channel logic enhancement mode ● RDS ON ≦28mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦42mΩ@VGS=4.5V (N-Ch)

sep 67a

Abstract: sep 61a LT4542C
Contextual Info: LT4542C N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542C is the N- and P-Channel logic enhancement mode ● 30V/6.7A,RDS ON =25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● 30V/5.0A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)

LT4936

Contextual Info: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high

ME4565

Abstract: p-channel DMOS
Contextual Info: ME4565 N- and P-Channel 40-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4565 is the N- and P-Channel logic enhancement mode ● RDS ON ≦40mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦45mΩ@VGS=4.5V (N-Ch)

LT4946

Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet inverter ccfl
Contextual Info: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V

telemecanique contactor catalogue

Abstract: LC1 D12 wiring diagram LC1 K12 Schneider telemecanique contactor lc1 d65 Telemecanique LC1 D12 Telemecanique LC1 D38 LC1 D18 wiring diagram LC1 D09 10 wiring diagram ATS01N232QN Schneider contactor catalogue
Contextual Info: Soft starters ATS 01 Catalogue May 07 General contents Soft starters for asynchronous motors 1 – Altistart 01 2 – Altistart U01 1 Contents 1 - Altistart 01 soft starters for asynchronous motors b Presentation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . pages 1/2 and 1/3

LR6209B

Contextual Info: LESHAN RADIO COMPANY, LTD. High PSRR Low Dropout Voltage 250mA CMOS LDO Regulator LR6209 Series INTRODUCTION FEATURE The LR6209 Series are a group of positive voltage regulators manufactured by CMOS technologies with high ripple rejection, extremely low power consumption and low

Contextual Info: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V

LT4542

Contextual Info: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)

LT4946

Abstract: 60V dual N-Channel trench mosfet LT-494 Dual N-Channel MOSFET SOP8
Contextual Info: LT4946 Dual N-Channel 60-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4946 is the Dual N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V

Ta7070

Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V

LT4542

Contextual Info: LT4542 N- and P-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4542 is the N- and P-Channel logic enhancement mode ● RDS ON ≦25mΩ@VGS=10V (N-Ch) power field effect transistors are produced using high cell density , ● RDS(ON)≦40mΩ@VGS=4.5V (N-Ch)

LT2302

Contextual Info: LT2302 N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2302 is the N-Channel logic enhancement mode power field ● RDS ON ≦85mΩ@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON) ≦115mΩ@VGS=2.5V