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    Dual N-Channel MOSFET SOP8

    Abstract: LT4936
    Contextual Info: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high


    Original     		LT4936 LT4936 2007-Ver4 Dual N-Channel MOSFET SOP8 PDF

    LT4936

    Contextual Info: LT4936 Dual N-Channel 30-V Power MOSFET GENERAL DESCRIPTION FEATURES The LT4936 is the Dual N-Channel logic enhancement ● RDS ON ≦36mΩ@VGS=10V mode power field effect transistors are produced using ● RDS(ON)≦45mΩ@VGS=4.5V high cell density, DMOS trench technology. This high


    Original     		LT4936 LT4936 300us, 2007-Ver4 PDF