LT2306A Search Results
LT2306A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V |
Original |
LT2306A LT2306A 2007-Ver4 | |
Ta7070Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON =30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)=35mΩ@VGS=4.5V |
Original |
LT2306A LT2306A 380us, 2007-Ver4 OT-23 Ta7070 | |
|
Contextual Info: LT2306A N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES The LT2306A is the N-Channel logic enhancement mode power field ● RDS ON ≦30mΩ@VGS=10V effect transistors, using high cell density, DMOS trench technology. ● RDS(ON)≦35mΩ@VGS=4.5V |
Original |
LT2306A LT2306A 380us, OT-23 |