20-100 GENERAL SEMICONDUCTOR Search Results

Contextual Info: SB3H90 & SB3H100 New Product Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance Major Ratings and Characteristics IF AV 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 µA Tj max.

Contextual Info: SS3H9 & SS3H10 New Product Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Tecnology for improved high temperature performance Major Ratings and Characteristics IF AV 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 µA

Contextual Info: SB3H90 & SB3H100 New Product Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance Major Ratings and Characteristics IF AV 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 µA Tj max.

Contextual Info: SS3H9 & SS3H10 New Product Vishay General Semiconductor High-Voltage Surface Mount Schottky Rectifier High Barrier Tecnology for improved high temperature performance Major Ratings and Characteristics IF AV 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 µA

Contextual Info: SB3H90 & SB3H100 New Product Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance Major Ratings and Characteristics IF AV 3.0 A VRRM 90 V, 100 V IFSM 100 A VF 0.65 V IR 20 µA Tj max.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MV1620 THRU MV1650 Silicon Epicap Diodes . . . epitaxial passivated tuning diodes designed for AFC applications in radio, TV, and general electronic-tuning. VOLTAGE-VARIANCE CAPACITANCE DIODES 6.8-100 pF 20 VOLTS • M aximum Working Voltage of 20 V

BCX70

Abstract: BCX71 BCX71H BCX71J BCX71K
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BCX71 series PNP general purpose transistors Product data sheet Supersedes data of 1999 Apr 20 2004 Feb 16 NXP Semiconductors Product data sheet PNP general purpose transistors BCX71 series FEATURES PINNING • Low current max. 100 mA

BC847 smd

Abstract: bc847b nxp V6 SC70 SMD code marking v8 sot323 45V100 BC847 nxp
Contextual Info: BC847 series 45 V, 100 mA NPN general-purpose transistors Rev. 8 — 20 August 2012 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors in Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number[1]

2N3565

Abstract: 2N5137 2N5381 2N5136 2N5172 2N4967 2N3565 to-106 2N5371 2N4275 2N5220
Contextual Info: 0000211 a h l 1989963 CENTRAL SEMICONDUCTOR 61C 0 0 21 1 T -J L s V / NPN EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. Ul o > V min max mA V 20 20 25 15 15 3 3 5 3 3 20 20 100 35 30 400 400 500 350 600 150 150 10 2 50 1 1 10 10 10 .25 .25 .25 0.4 0.5 15

2N4265

Abstract: 2N3565 2N5856 2N3565 to-106 2N5381 2N5136 2N5858 2N3692 2N5137 2N5172
Contextual Info: 0000211 a h l 61C 0 0 21 1 T -J L s V / 1989963 CENTRAL SEMICONDUCTOR NPN EPOXY - SWITCHING AND GENERAL PURPOSE Cont'd. 111 o > V min max mA V 20 20 25 15 15 3 3 5 3 3 20 20 100 35 30 400 400 500 350 600 150 150 10 2 50 1 1 10 10 10 .25 .25 .25 0.4 0.5 15

Contextual Info: ADC08100 ADC08100 8-Bit, 20 Msps to 100 Msps, 1.3 mW/Msps A/D Converter Texa s In s t r u m e n t s Literature Number: SNAS060H Semiconductor ADC08100 8-Bit, 20 Msps to 100 Msps, 1.3 mW/Msps A/D Converter General Description Features The ADC08100 is a low-power, 8-bit, monolithic analog-todigital converter with an on-chip track-and-hold circuit. Opti­

VTS40100CT

Abstract: JESD22-B102D J-STD-002B
Contextual Info: VTS40100CT New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Ultra Low VF = 0.375 V at IF = 5 A Major Ratings and Characteristics IF AV 2 x 20 A VRRM 100 V IFSM 250 A 3 2 VF at IF = 20 A 0.61 V TJ max.

V40100P

Abstract: JESD22-B102D J-STD-002B
Contextual Info: V40100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A TO-247AD TO-3P Major Ratings and Characteristics IF(AV) 2 x 20 A VRRM 100 V IFSM 250 A VF at IF = 20 A 0.60 V TJ max.

TRANSISTOR SMD CODE PACKAGE SOT363

Abstract: TRANSISTOR SMD MARKING CODES FT 2010-01-20 CHINA 2010-01-20 PUMX1 NXP SOT363
Contextual Info: PUMX1 40 V, 100 mA NPN/NPN general-purpose transistor Rev. 04 — 20 January 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor with two independently operating transistors in a SOT363 SC-88 very small Surface-Mounted Device (SMD) plastic package.

1N916

Abstract: BCW33LT1 MPS3904
Contextual Info: ON Semiconductort BCW33LT1 General Purpose Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 20 Vdc Collector–Base Voltage VCBO 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc IC 100 mAdc Symbol Max Unit PD 225 mW

BYV32E

Abstract: BYV32E-100 BYV32EB
Contextual Info: BYV32E-100 Dual rugged ultrafast rectifier diode, 20 A, 100 V Rev. 04 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Ultrafast dual epitaxial rectifier diode in a SOT78 TO-220AB plastic package. 1.2 Features and benefits „ High reverse voltage surge capability

Contextual Info: FDMD84100 Dual N-Channel PowerTrench MOSFET 100 V, 21 A, 20 mΩ Features General Description „ Max rDS on = 20 mΩ at VGS = 10 V, ID = 7 A „ Ideal for flexible layout in secondary side synchronous rectification This package integrates two N-Channel devices connected

K1150PG

Abstract: K1150Pg Opto Coupler opto coupler 4n35 datasheet Opto Coupler 4N33 darlington opto coupler opto coupler 4n35 purpose of opto coupler 4n35 4 channel triac opto x1 transistor K1150P
Contextual Info: Vishay Semiconductors Classification Chart for Opto Couplers General purpose 4N27/28 CTR>10% Standard 4N25/26 CTR>20% Transistor output 4N35–37 CTR>100% 6 Pin-Series Base n.c. TCDT1110 Transistor output CTR>50% High CTR 4N32/33 Darlington output CTR>500%

tip120tip122

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features

Silicon Power Transistor DPAK MJD42c

Abstract: data sheet tip41 file type 369D MJD41C MJD41CRL MJD41CT4 MJD42C MJD42C1 TIP41 TIP42
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS

MJD127T4

Abstract: npn darlington transistor 150 watts 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125
Contextual Info: MJD122 NPN MJD127 (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS Features

Silicon Power Transistor DPAK MJD42c

Abstract: 369D
Contextual Info: MJD41C NPN MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS

transistor MJE3055T

Abstract: transistor Ic 4A NPN MJE3055T equivalent MJE2955T MJE3055T MJE2955
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE3055T DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 60V(Min) ·High DC Current Gain: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T APPLICATIONS ·Designed for use in general-purpose amplifier and switching

MJD127T4G

Abstract: 2N6040 2N6045 MJD122 MJD122G MJD127 TIP120 TIP122 TIP125 TIP127
Contextual Info: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS, 20 WATTS