20 A BJT Search Results
20 A BJT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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L17DM53745217 |
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High Current Power Pin male, 15u\\ Gold, crimping, 20A | |||
L17DM537447 |
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Dsub, Straight, Power Contact, Socket, 0.38m(15 in) Gold, 10~20A, Soldercup | |||
8638PPC2006LF |
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D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Pin Crimp 20A, >500 Cycles | |||
8638PPC2005LF |
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D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Pin Crimp 20A, >200 Cycles | |||
8638PPS2006LF |
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D-Sub Cable Connectors, Input Output Connectors, Power Contacts 8638 Pin Solder Bucket 20A, >500 Cycles |
20 A BJT Price and Stock
ams OSRAM Group GB JTLPS1.13-FVG6-23-1Single Color LEDs GB JTLPS1.13 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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GB JTLPS1.13-FVG6-23-1 | 63,805 |
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Broadcom Limited ASCB-JTC2-0A308Multi-Color LEDs 1615 Tricolor PLCC-4 LED |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ASCB-JTC2-0A308 | 11,222 |
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Citizen Finedevice Co Ltd HCM4949152000ABJTCrystals 49.152MHz HC49S SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HCM4949152000ABJT | 3,237 |
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Citizen Finedevice Co Ltd HCM494915200ABJTCrystals 4.9152MHz 18pF HC49S SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HCM494915200ABJT | 1,455 |
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Citizen Finedevice Co Ltd HCM4911059200ABJTCrystals 11.0592MHz 18pF HC49S SMD |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HCM4911059200ABJT | 1,181 |
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Buy Now |
20 A BJT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2N2246 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)1.0m |
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2N2246 Freq60M | |
Contextual Info: 2N2245 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)1.0m |
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2N2245 Freq60M | |
Contextual Info: 2N2244 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)1.0m |
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2N2244 Freq60M | |
Contextual Info: 2N3412 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20â V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)60m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)3.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.175 |
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2N3412 Freq100M | |
Contextual Info: 2N602 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)8.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.20 h(FE) Max. Current gain.80 |
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2N602 Freq10MÂ | |
Contextual Info: 2N377 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)25 I(C) Max. (A)200m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)20u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.20 h(FE) Max. Current gain.60 |
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2N377 | |
Contextual Info: PG1438 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)65 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20 |
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PG1438 Freq40M | |
Contextual Info: MMBT6561 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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MMBT6561 Freq60M | |
Contextual Info: PG1466 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)20 |
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PG1466 Freq40M | |
Contextual Info: PG1469 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)20 |
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PG1469 Freq40M | |
Contextual Info: PG1473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20 |
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PG1473 Freq40M | |
Contextual Info: TP5142 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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TP5142 Freq100M | |
Contextual Info: 2N6257 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)20 |
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2N6257 Freq200k | |
Contextual Info: 2N2560 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.5 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0 |
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2N2560 Freq250k StyleStR-10 | |
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Contextual Info: 2N5959 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)20 |
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2N5959 Freq10M | |
Contextual Info: 2SA772-2 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SA772-2 Freq80M | |
Contextual Info: 2SC3267 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).5 @I(C) (A) (Test Condition)2.0 |
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2SC3267 Freq120M | |
Contextual Info: GFT3408/20 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)75õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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GFT3408/20 Freq400k time20u | |
Contextual Info: 2N2556 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)100# I(CBO) Max. (A)125u @V(CBO) (V) (Test Condition)20 V(CE)sat Max. (V).25 @I(C) (A) (Test Condition)1.0 |
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2N2556 Freq225k | |
Contextual Info: CIL463A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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CIL463A Freq60M | |
Contextual Info: 2N5958 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)20 |
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2N5958 Freq20M | |
Contextual Info: 163-20 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)215 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)30m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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Freq500k | |
Contextual Info: BC146-03 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)50mê Maximum Operating Temp (øC)125õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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BC146-03 Freq150M | |
Contextual Info: 2SA1296 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)20 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2SA1296 Freq120M |