2.T TRANSISTOR PLANAR Search Results

Contextual Info: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm

AF4505

Abstract: transistor BF 502 Q U 31U transistor s250
Contextual Info: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .

BLY89A

Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
Contextual Info: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every

1B marking transistor

Abstract: 33T4 CMBT2369
Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60

transistor 2n3053

Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
Contextual Info: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.

Contextual Info: N amer philips /di^ crete ~ □bE~p 86D 0 1 1 2 4 00133L2 □ • D T * -" 3 3 " ^ B L U 5 T “ ~ _ { _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband

Contextual Info: BF199 N AMER PHILIPS/DISCRETE DbE D bbS3T31 DOlSHbD T T-3/-2. V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm

2n3966

Abstract: transistor 2sk CRS15
Contextual Info: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

2SB1064

Abstract: 2SD1505
Contextual Info: 2SB1064 h 7 > y ^ 5 / T ransistors 2SB1064 fill /Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor i ->£m /D im ension s U n it: mm) 1) VCE(s a t) = 0 .5 V (T y p.) t-fft t 'o a t Ic / I b = - 2 A / - 0 . 2 A 2) A S C W 'J k l'o 3) 2 S D 1 5 0 5 t = l > 7 PU

2SD1878

Abstract: 2SD187 TV horizontal Deflection Systems transistor 2sd1878 NPN POWER TRANSISTOR 2SD1878
Contextual Info: Ordering number: EN 2 4 2 5 2 S DM 8 7 8 NPN Triple Diffused Planar Type Silicon Transistor Co l o r TV Ho r i z o n t a l D efle c t i o n Ou t p u t Applications Applications . Color TV horizontal deflection output . Color display horizontal deflection output

Contextual Info: PHOTO TRANSISTOR lflE D MARKTECH INTERNATIONAL STITtiSS QQQD40Ô 1 T-MI-W MTD6010A SILICON NPN EPITAXIAL PLANAR SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR APPLICATIONS • O P T IC A L SW IT C H • TAPE, C A R D R E A D E R S 1. E M IT T E R 2. C O L L E C T O R

2n5449

Abstract: 2N5450
Contextual Info: 2 N 5449 • 2 N 5450 Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar A F Transistor Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Besondere Merkmale: • Verlustleistung 360 m W Features: • Power dissipation 360 m W

Contextual Info: ' , > CL146 I ; NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G E N E R A L D E S C R IP T IO N T 0 -9 2 B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment

BLX91A

Abstract: BLX91 J 3305 transistor 936 transistor 931 D057 G027 IEC134 transistor 3305
Contextual Info: PHI L IP S IN TE R N A T I O N A L MAINTENANCE TYPE MIE J> 7 1 10 â 2 b 0 0 27 0 2 3 □ B i PHIN B LX 91A . m T '3 3 'O S U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C w ith a

Contextual Info: 2SC D B A23SbDS □ ÜQH'iÜfc» S « S I E G _ „ _ , , J ~ i ' r — t '- S NPN Silicon Planar Transistor 2 N 3019 _ SIEMENS A K T I E N G E S E L L S C H A F -2 N 3019 is an epitaxial NPN silicon planar transistor in TO 39 case 5 C 3 DIN 41873 .

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

Contextual Info: ROHM CO LTD •4DE 7 ô 2 f l cH cl D DGGSSTB T •RH M 2SB1286 h "7 > y X $ / I ransistors - 7 ^ 3 3 - 3 1 2SB12. pnp Epitaxial Planar PNP Silicon Darlington Transistor # —U> h hFE t f ’r a t ' o 2 K rtM o

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 2 6 3 0 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band m obile radio applications. Dimensions in mm FU

cd 1191 cb

Abstract: CD 1691 CB
Contextual Info: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­

Contextual Info: 40E ROHM CO L T D » 7 8 2 6 ^ □QQS'IBt. / T ransistors 3 HRHN 2SD1665AM — 2 S D 1 6 6 5 A M — — T -2 7 -Z I Pow er Amp. Epitaxial Planar NPN Silicon Transistor • ^ JfiTf^ H /D innensions Unit : mm • « * . 1 ) i t « E T ' & 3 (B V Ce o = 1 6 0 V ) o