2.T TRANSISTOR PLANAR Search Results

G33S

Abstract: I10KQ
Contextual Info: UMG9N/FMG9A b ÿ > !s7>. £ /Transistors FMG9A S7 t /Dual Mini-Mold Transistor Epitaxal Planar NPN Silicon Transistor < —£ F ÿ ' f M/Inverter Driver 1 U M T SC-70), SM T (SC-59) t W i — FMG9A UMG9N Z .9 ± 0 .2 z.o±o.z 2 m < V T -'y $ Jis h ? > 9 * $

BLV21

Abstract: RF POWER TRANSISTOR NPN vhf
Contextual Info: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran­

Contextual Info: rZ 7 SGS-THOMSON Ä T# R [L IS T O « 2 N5339 SILICON NPN TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5339 is a silicon epitaxial planar NPN transistor in Jedec TO-39 metal case. It is intended for high switching applications up to 5A.

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4526 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 6 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifier applications in Dimensions in mm

AF4505

Abstract: transistor BF 502 Q U 31U transistor s250
Contextual Info: ESC D • 023SbOS ÛQQ45GS T BISIEG ; 7^-5/' 2 / NPN Silicon RF Transistor SIEMENS BF502 A K T I E N G E S E L L S C H A F >4505 0 - | BF 5 0 2 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 D I N 4 1 86 8 .

BLY89A

Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
Contextual Info: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every

1B marking transistor

Abstract: 33T4 CMBT2369
Contextual Info: CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N -P N transistor Marking CMBT2369 = 1J PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0 2.8 0.48 0.38 0.14 opérés 3 Pin configuration 2.6 t = BASE 2 = EMITTER 3 = COLLECTOR 2.4 _1 .0 2 _ 0.89 0.60

bly87a

Abstract: transistor c 1974
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D H 73,1002b 0 0 2 7 ^ 3 T B P H I N BLY87A T-33-07 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to

transistor 2n3053

Abstract: 2N3053 NPN transistor 2N3053 SILICON TRANSISTOR 2N3053
Contextual Info: 2N3053 PH IL I P S I N T E R N A T I O N A L 5bE ]> A 7 H 0 0 2 b G042Li44 T14 • IPHIN ■ T = 3 ir- t ? SILICON PLANAR TRANSISTOR N-P-N transistor in a TO -39 metal envelope designed fo r medium speed, saturated and non-saturated switching applications for industrial service.

Contextual Info: N amer philips /di^ crete ~ □bE~p 86D 0 1 1 2 4 00133L2 □ • D T * -" 3 3 " ^ B L U 5 T “ ~ _ { _ V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed for use in military and professional wideband

2N2297

Abstract: LB 124 transistor
Contextual Info: N AMER PHILIPS/DISCRETE t.'ìE ]> m □□200^1 2=50 2N2297 I SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor intended fo r large signal h.f. and v.h.f. am plifier applications. Q UICK REFERENCE D A T A Collector-base voltage open em itter v CBO max.

Contextual Info: BF199 N AMER PHILIPS/DISCRETE DbE D bbS3T31 DOlSHbD T T-3/-2. V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision

Contextual Info: h7 / T ransistors UMG10N h-7 > V ^ ^ / D u a l Mini-Mold Transistor 7 i7 /R - i- ^ K 7 J l ' J l ' - t M N P N y lJ 3 > h 7 > y * $ Epitaxal Planar NPN Silicon Transistor < > / \ ' - 2 H y 'f / ’v/Inverter Driver • 1 U M T S C -7 0 ) /Dimensions (Unit : mm)

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed for R F power amplifiers in V H F band mobile radio applications. Dimensions in mm

2n3966

Abstract: transistor 2sk CRS15
Contextual Info: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f

H7 RF

Contextual Info: h7 y UMW11N/FMW 11 £ /Transistors 7 a 7 / ^ - î - ^ K h"7 > V > ^ /D iia l Mini-Mold Transistor Epitaxial Planar NPN Silicon Transistor liiJià&JStiffl/RF Amplifier ' • W ft 1 U M T SC-70), SM T (SC-59) 2 m<r> f- v > V X 2 tfâ — if A 0 / Dimensions (Unit : mm)

k0303

Contextual Info: Central Semiconductor Corp. C X T 2 90 7A PNP SILICON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C T O R CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and

Contextual Info: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband

zt751

Abstract: TRANSISTOR zt751 zt75
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Planar E pitaxial Transistor PZT751T1 M otorola Preferred D evice This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the S O T -2 2 3 package which is designed for

2SC2094

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2094 NPN EPITAXIAL PLANAR T Y P E D ESC R IPT IO N O U T LIN E D R A W IN G 2 S C 2 0 9 4 is a silicon N P N epitaxial planar type transistor designed Dimensions in mm for R F power amplifiers in V H F band mobile radio applications.

118-136 mhz

Abstract: THOMSON-CSF, RF TRANSISTOR RF Amplifiers Thomson-CSF amplifier
Contextual Info: S G S-THOMSON OMC D | 7 ^ 2 3 7 OOaOlll 5 D T ~ ?-*f SOLID STATE MICROWAVE SD1224-2 i THOMSON-CSF COMPONENTS CORPORATION I Montgomeryville, PA 18936• 215 362-8500■ TWX 510-661-7299 _ . ' _; VHF COMMUNICATIONS TRANSISTOR DESCRIPTION The SD1224-2 is an epitaxial silicon NPN-planar transistor designed

TRANSISTOR D 570

Abstract: BF 145 transistor transistor bf
Contextual Info: 2SC D • Ö23SLQS 0GQ4S23 Q H S I E G r - 3 t-rs ~ BF 568 PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF BF 5 6 8 is a PNP silicon planar transistor with passivated surface in TO 2 3 6 plastic package 2 3 A 3 DIN 4.1869 . The transistor is particularly suitable for use in low-noise gain-controlled

BLX93A

Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Contextual Info: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bbS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe