2SC4524 Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2 S C 4 5 2 4 is a silicon N P N epitaxial planar type transistor specifically designed for R F power amplifiers applications Dimensions in mm

25C45

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR T Y P E D IS C R IP T IO N O U T L IN E D R A W IN G 2SC 4524 is a silicon NPN epitaxial planar type transistor specifically designed for R F power amplifiers applications in 1.65GHz. Dimensions in mm

7w RF POWER TRANSISTOR NPN

Abstract: 2SC4524 2sc4524 mitsubishi
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC4524 NPN EPITAXIAL PLANAR TYPE D IS C R E T IO N 2SC4524 is a silicon NPN epitaxial planar type transistor specifically designed for RF power amplifiers applications in 1.65GHz. O U T L IN E D R A W IN G Dimensions in mm FEATURES

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION

2SC4515

Abstract: 2SC4536 2SC4561 2SC4550 c455 2SC4516 2SC4519 2SC4520 2SC4521 2SC4523
Contextual Info: - 206 - m X Ë f à <Ta=25,C 1*EPÍ¿Tc=25'C 2SC4515 föT HF LN A n VcBO Vc e o IcCDO Pc Pc* V) (V) (A) (W) (W) 15 10 0.05 "(max) (/¿A) 0.2 VcB (V) 1 10 % (min) ft 4# (max) iê (Ta=25<C ) (max) (V) ic/ÏE (A) Vc e (V) [*EP(atypffi] 50 300 8 0.01 (max) (V)