2.7V 40F Search Results

TE28F160B3B120

Abstract: 29058
Contextual Info: intei PRELIMINARY SMART 3 ADVANCED BOOT BLOCK 4-MBIT, 8-MBIT, 16-MBIT FLASH MEMORY FAMILY 28F400B3, 28F800B3, 28F160B3 • Flexible SmartVoltage Technology — 2.7V-3.6V Program/Erase — 2.7V-3.6V Read Operation — 12V V pp Fast Programming ■ 2.7V or 1.8V I/O Option

A0-A21

Contextual Info: ISSI IS71VPCF64GS08 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 64 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.1V • High performance: FLASH FEATURES • Power Dissipation:

st m29w640gb

Abstract: M29W640GL Led matrix 8x8 M29W640GT 640g morocco M29W640GB M29W640GH TFBGA48 TSOP56 M29W640GT70
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

st m29w640gb

Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

A11-A21

Abstract: A0-A21 M29DW640D M29DW640DB 3A800
Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

AT26DF041

Abstract: AT26DF041-MU AT26F004 JEP106
Contextual Info: Features • • • • • • • • • • • • Single 3.0V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 33 MHz Max Clock Frequency Byte Program Operation Page Program Operation – 2048 Pages (256 Bytes/Page) Main Memory

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

ATMEL 612

Contextual Info: Features • • • • • • • • • • • • Single 3.0V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 33 MHz Max Clock Frequency Byte Program Operation Page Program Operation – 2048 Pages (256 Bytes/Page) Main Memory

AT26DF041-SU

Abstract: AT26DF041 AT26DF041-MU JEP106 7FF00h 8M1-A
Contextual Info: Features • • • • • • • • • • • • Single 3.0V - 3.6V or 2.7V - 3.6V Supply Serial Peripheral Interface SPI Compatible 33 MHz Max Clock Frequency Byte Program Operation Page Program Operation – 2048 Pages (256 Bytes/Page) Main Memory

M29W640

Abstract: 2298H AI12781 M29W640GH AI12782 M29W640GB 3A00 M29W640GT
Contextual Info: M29W640GH, M29W640GL M29W640GT, M29W640GB 64 Mbit 8Mb x8 or 4Mb x16, Page 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA Features Summary • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ

A0-A21

Abstract: IS71V16F64GS08
Contextual Info: IS71V08F64GS08 IS71V16F64GS08 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 64 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70 ns maximum access time

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

M29DW640DB

Abstract: A0-A21 M29DW640D S1555 BYS 045
Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

D2578

Abstract: JESD97 M29DW128F TSOP56
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

64 MBIT SERIAL FLASH MEMORY ISSI

Abstract: A0-A21 IS71V16F64GS08 64 MB flash
Contextual Info: IS71V08F64GS08 IS71V16F64GS08 ISSI 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 64 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70 ns maximum access time

JESD97

Abstract: M29DW128F TSOP56 6C80
Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)

M29W640D

Abstract: A0-A21 M29W640DB M29W640DT
Contextual Info: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 90 ns

N6796

Contextual Info: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V Supply, Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VCCQ= 1.65V to 3.6V for Input/Output – VPP =12V for Fast Program (optional)

A0-A21

Abstract: M29DW640D
Contextual Info: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)