2 N 2905 TRANSISTOR Search Results

k 942

Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
Contextual Info: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are

ic 2904

Abstract: ir 2905 2904 2N2905 2904 d 2905 2n2904 N2905 N 2904 2904 g
Contextual Info: 'W 2 N 2904- 2 N 2 9 0 4 A - 2N 29050 • 2N 2905 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und Schalter Applications: A m plifiers and switches Besondere Merkmale: Features:

c2259

Abstract: w188 N2905
Contextual Info: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are

ic 2904

Abstract: N2905
Contextual Info: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are

Contextual Info: r 7 Z S ^ 7# G S - T H O M S O 2 N 2905 2 N 2907 N [ïfflo e œ iiL n e ra « ® G ENERAL PURPO SE AM PLIFIERS AND SW ITC HES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal

2N2219

Abstract: 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A
Contextual Info: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2 N T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X 2 2 1 9 ’A Compì, of 2N 2904, A - 2905, A Preferred device D isp o sitif recommandé - LF or HF small or large signal amplification A m p lific a tio n B F o u H F p e tits ou grands signaux

2N 2905a pnp transistor

Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
Contextual Info: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO

2904

Abstract: st 2904 TI 2905 2905 2907 a 2907 2N2905
Contextual Info: 2N 2904 2N 2905 ¡SUS? SILICON PLANAR PNP GENERAL PURPOSE A M PLIFIER S AN D SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 for 2N 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and 2N 2907)

2904

Abstract: 2907 a 2907 2N2904 2N2907 2N2905
Contextual Info: 2N2904 2N 2905 2N 2906 SILICON PLANAR PNP GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 fo r 2IM 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and; 2N 2907)

T056

Abstract: 2904 2904a 2905 2906 transistor t05 PN2904 T018 BFX29 N2905
Contextual Info: PNP Silicon Transistors PN P S ilic o n Planar Transistors fo r m ed ium level sw itching Type PTOT 2 P h/rfdO V /IO m A hF f V 5 5 4 4 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 — > 50 — 3 3 > 40 > 40 50 . 200 (10/50) 50 . 200 (0.4/10) >40 (10/150) > 40 (10/150)

bc 192

Abstract: BSX41 2904 BSW72 2905 2907 BSX40 N2905 BSW75
Contextual Info: PNP Silicon Transistors PNP Silicon Epitaxial Planar Transistors lc = 500m A in T O -1 8 and T O -3 9 ( « T O - 5 ) metal ca s e s for high speed sw itch ing Type M a x im u m R a t in g s C h a r a c t e r is t ic s a t T amb = 25 ° C E J3 li h-°

1N916

Abstract: NFP2905 NFP2905A NFP290S
Contextual Info: NFP2905 NFP2905A A M PL IFIE R T R A N S IS T O R S P N P S IL IC O N PNP SMALL SIGNAL TRANSISTOR- DUAL M E C H A N IC A L O U T L IN E • • • • H IG H D C C U R R E N T G A IN H IG H C U R R E N T G A IN B A N D W ID T H P R O D U C T H IG H S P E E D S W IT C H IN G C IR C U IT S

Contextual Info: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39

TRANSISTOR BC 313

Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V

3055 5C pnp transistor

Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
Contextual Info: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4

bc 301 transistor

Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP

bc 107 transistor

Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
Contextual Info: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP

lr 2905 transistor

Abstract: lr 2905 z LR 2905 md2904 ic 2904 MD2905
Contextual Info: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA D E | t , 3 b 7 E S 4 0 D A B 4 4 3 0 |" SC XSTRS/R F 9 6D 8 2 4 4 3 _ T M A X IM U M RATINGS Sym bol M D 2 9 0 4 ,F M D 29Q 5,F M Q 29 0 4 C ollec to r-E m itter V o lta g e VCEO 40 C ollector-B ase V o ltag e

CASE318E-04

Abstract: Small-signal Transistors and Diodes
Contextual Info: Section 2 Plastic-Encapsulated Transistors In Brief. . . Motorola's plastic transistors and diodes encompass h u n d re d s of d e v ic e s s p a n n in g th e ga m ut from general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for

2222 a

Abstract: MOTOROLA 2N2905A 2N2904 2N2905A RS 2N2219 MOTOROLA 2N2218 2n2907 331
Contextual Info: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d fo r h ig h -sp e e d s w itc h in g c irc u its , DC to VHF a m p lifie r a p p lic a ­ tio n s and c o m p le m e n ta ry c irc u itry . thru • H igh DC C u rre n t G ain S p e cifie d — 0.1 to 500 m A d c

hep 230 pnp

Abstract: Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D
Contextual Info: TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 5 , M A R C H 1973 D ESIG NED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCH IN G A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined with Very Low Saturation Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement 3 DRAIN 2 GATE \ j. TMOS 1 SOURCE CASE 29-05, STYLE 22 TO-92 TO-226AE MAXIM UM RATINGS Symbol Value Unit Drain-Source Voltage Rating Voss 60 Vdc Gate-Source Voltage — Continuous

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Am plifier Transistor PNP Silicon MPS6726 MPS6727 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol C ollector- Emitter Voltage Value Unit Vdc v CEO o o MPS6726 MPS6727 C ollector-Base Voltage CASE 29-05, STYLE 1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIM UM RATINGS Rating Symbol Value Collector-Emltter Voltage v CEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage