1X1013RAD Search Results

Contextual Info: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator

RAD HARD TRENCH TRANSISTOR

Contextual Info: Honeywell 64K X 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 FEATURES RADIATION • Fabricated with R IC M O S1“ Silicon on Insulator SOI 1.2 (im process • Total Dose Hardness through 1x10 e rad (S i0 2) • Neutron Hardness through 1x1014 cm 2 OTHER

Contextual Info: /V' HONEYùJELL/ S S E C 3ÔE D M551Ô75 0Q00S54 M I HÔN3 Military Products Advance Information HX6364 8K x 8 RADIATION-HARDENED STATIC RAM - SOI FEATURES RADIATIO N OTHER • Fabricated with RICMOS Silicon on Insulator SOI 1.2 ¡am Process • Access Tim e < 45 nsec (-55 to 125°C)

1x10

Abstract: MN55441 HC6364
Contextual Info: Kcmeywell HONEYÙJELL/S S E C 3ÖE D 4551Ô72 DOüGSSb ñ B 3 H 0 N 3 - Military Products Advance Information HX6464 64K x 1 RADIATION-HARDENED STATIC RAM - SOI -OS FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator

x-ray cmos

Contextual Info: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator

Contextual Info: L.3E D MSS1Ô7S D 0 G 1 0 2 b HONEYl i l ELL/ S 3MD • H 0 N 3 Honeywell S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HX1060 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x105 rad SiOa OTHER In production on Honeywell's 1.2 (im Minimum

8kx8 ROM

Abstract: rom radiation HX6664
Contextual Info: Honeywell Military Products 8K x 8 RADIATION-HARDENED STATIC ROM - SOI HX6664 FEATURES RADIATION Fabricated with RICMOS Silicon on Insulator SOI 1.2 |im Process - Latchup Free OTHER • Full military temperature operation (-55°C to 125°C) • Access Time < 45 nsec (-55°C to 125°C)