1X10 Search Results

5 PEN PC TECHNOLOGY apllications

Contextual Info: DATA SHEET PM PMC-970113 ISSUE 3 PMC-Sierra, Inc. PM3351 e l a n 1x100 SINGLE PORT FAST ETHERNET SWITCH PM3351 ELAN 1X100 SINGLE PORT FAST ETHERNET SWITCH DATA SHEET ISSUE 3: FEBRUARY 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly

Contextual Info: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

LXT944

Abstract: PM3350 PM3351
Contextual Info: PM3351 Preliminary Information ELAN - TM 1x100 SINGLE PORT 10/100 Mbit/s ETHERNET SWITCH FEATURES • Single-chip, 1-port, full duplex or half duplex, 10/100BaseT switching device for low-cost unmanaged and managed networks. • Expansion port supports a peak

Contextual Info: U HS-26C31RH S E M I C O N D U C T O R Radiation Hardened Quad Differential Line Driver November 1995 Features Pinouts • 1 . 2 Micron Radiation Hardened CMOS - Total Dose Up to 300K RAD Si) - Dose Rate Upset > 1x109 RAD/Sec (20ns Pulse) • Latchup Free

6x6 tact

Abstract: 6x6 tact switch 1X105
Contextual Info: TACT SWITCHES MANUAL INSERTION Coplanar Mount SERIES EDA • Straight Snap-in PC Terminals • 6x6 mm size E D - A Height from PCB (h) Operating Force Life (Cycles) A B C D E F 1 100±50gf 2 160±50gf 3 260±70gf 1x105 1x105 1x105 4.3 5.0 7.0 9.5 13.0

LT1012 spice model

Abstract: LT1012 500E LT1024
Contextual Info: /'TLTTCAB SPICE MACROMODELS TECHNOLOGY 1X1012 Macromodel Linear Technology LT1012 op amp model with calls for LT1024 Written: 09-05-1989 16:53:38 Type: Bipolar npn input, internal comp. Typical specs: Vos-l.OE-OS, I b = 3 .0E-11, I o s = 2 .0E-11, G B P = 6 .0E+05Hz, Phase mar.= 70 deg,

Contextual Info: U ltra S table OCXOs Series 5000 FEATURES • Low aging rate day year to 1 X10,n to 1x106 • Excellent temperature ± 3 x 1 0 3 stability 0 to 60°C • Frequency range 4 to 20 MHz - m — Iranlie/ 1/ -I 4— ^ Pin out 50 A Note: Dimensions in mm SPECIFICATIONS

1X100

Abstract: LXT944 PM3350 PM3351 MDIO clause 45
Contextual Info: PM3351 ELAN 1X100 DATA SHEET PMC-970113 ISSUE 3 SINGLE PORT FAST ETHERNET SWITCH PM3351 ELAN 1X100 SINGLE PORT FAST ETHERNET SWITCH DATA SHEET ISSUE 3: FEBRUARY 1998 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE PM3351 ELAN 1X100

Contextual Info: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)

Contextual Info: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

5962-95845

Abstract: HX6356
Contextual Info: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

transistor m285

Abstract: 167A690 transistor C013 transistor k450 transistor f630 182A934 cm c013 D650
Contextual Info: 167A690 182A934 32K x 8 Radiation Hardened Static RAM – 5 V Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 1x106 rad Si • Neutron Hardness through 1x1014 N/cm2 • Dynamic and Static Transient Upset Hardness

prom 238A790

Abstract: 238A790 BAE Systems prom 32K x 8 AEFJANTXV1N4100-1-BAE/TR/BAE ppi interface 1007 S/Stag Programmer Orbit AS9000 unisite 28C256 BAE Systems
Contextual Info: 32K x 8 Radiation Hardened Programmable Read Only Memory PROM – 3.3V 238A790 Product Description Features Radiation • Fabricated with Bulk CMOS 0.8 µm Process • Total Dose Hardness through 2x105 rad(Si) • Neutron Hardness through 1x1012 N/cm2 • SEU Immune (No Latches)

Contextual Info: HS-26C31RH HARRIS S E M I C O N D U C T O R æ Radiation Hardened Quad Differential Line Driver March1995 Features Pinouts • 1.2 Micron Radiation Hardened CMOS -Total Dose Up to 300K RAD Si -Dose Rate Upset > 1x10* RAD/Sec (20nS Pulse) • Latchup Free

RLT635_100G

Contextual Info: RLT635-100G TECHNICAL DATA High Power Visible Laser Diode Emitting Aperatur: 1x100 µm² Lasing wavelength: 635 nm, typ. Max. optical power: 100 mW Package: 9 mm PIN CONNECTION: 1 Laserdiode cathode 2) Laserdiode anode 3) n.c. Absolute Maximum Ratings Tc = 25°C)

hx6228

Abstract: MIL-PRF38535
Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)

UM DIODE

Abstract: vcsel array
Contextual Info: AVAP - 1x10MM Multi-mode VCSEL array Features • • • • 1x10 VCSEL array 850 nm wavelength range High wavelength uniformity Other configurations available on request Electro-optical characteristics for individual lasers (T = 25°C) Parameter Threshold current

Contextual Info: OCXO CMOS Output High Performance HCD681 Specifications Product Parameters ࡯ Ageing per day at despatch : < 1x10-9 < 5x10-10 < 2x10-10 ࡯ ˿ ࡯ Frequency stability: < 1x10-7 per year (option D) < 2x10-8 per year (option F) < 1x10-9 per 10% change in VDD

Contextual Info: OCXO CMOS Output - Fast Warm Up HCD686 Specifications Product Parameters ࡯ Ageing per day at despatch : < 1x10-9 < 5x10-10 < 2x10-10 ࡯ ˿ ࡯ Frequency stability: < 1x10-7 per year (option D) < 2x10-8 per year (option F) < 1x10-9 per 10% change in VDD