1V100 Search Results

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Contextual Info: Advance CMOS SRAM KM616FR4110 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 0.1 0.11 History Draft Date Remark Initial Draft April 8, 1998 Advance June 27, 1998 Advance Revise - Speed bin change : 70/100ns —> 85/100ns

Contextual Info: K M 6 8 V 4 0 0 0 B , K M 6 8 U 4 0 0 0 B Fami l y CM OS SRAM P a c u r o e n ! Title 51 2 K x 8 bit L o w P o w e r and L o w Vo l t a g e C M O S Static R A M R e v is io n H a s ta r'y R e v is io n N o . H is to ry D ra ft D ata R e m a rk 0.0 Initial d ra ft

Contextual Info: KM616FS4110 Family Preliminary CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change

1V100RK

Abstract: 1T330 1Z56 N2400 1C39RK N5600 1p39 1V75RK N220 N3300
Contextual Info: 1002 Reader's 6/21/99 11:36 AM Page 29 Leaded Temperature Compensating Capacitors • ■ ■ Available in NPO through N5600 dielectrics Specifically designed temperature coefficient characteristic curve Used in high shock and cross over applications Specifications

ELECTROLYTIC capacitor, .10uF 50V

Abstract: CAPACITOR VALUE TABLE 25V Electrolytic capacitor datasheet CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V electrolytic capacitor 1000 uf with ESR rating 10uf 16V Electrolytic Capacitor capacitor 0.22 Water Level Monitoring Capacitor 0.22 p capacitor 10uf 16v
Contextual Info: DIGI-KEY Issue :CE-VHC-BE-0 Date of Issue :19 May, 2004 Classification New , Changed , Revised PRODUCT SPECIFICATION Product Description Product Part Number :Aluminum Electrolytic Capacitor

KM616V4000CLT-7L

Abstract: KM616U4000C KM616U4000CL-L
Contextual Info: A dvance C M O S SRAM K M 616V 4000C , K M 616U 4000C Fam ily Document Title 256K x16 bit Low Pow er and Low V oltage C M O S Static RAM Revision History R e v is io n N o H is to ry 0 .0 Initial dra ft D ra ft D a ta R e m a rk J a n u a ry 13th 1998 A d va n ce

1A470

Abstract: 1E-10
Contextual Info: 1oS£s4 u n i t e d ALUMINUM ELECTROLYTIC CAPACITORS CHEMI-CON S U B S I D I A R I E S OF N I P P O N CELSM SERIES C H E M I - C O N , I NC CELSM SERIES ULTRA SMALL RADIAL TYPE • FEATURES 1. 5mm height, 3, 4, 5, and 6.3m m dia. 2. Suitable for c o m p a c t and lower height requirem ents.

1V100RK

Abstract: 1P75 1r33 1u100 1C39RK 1V120
Contextual Info: E Republic Electronics Corp. Ceramic Capacitors for over 45 years TEMPERATURE COMPENSATING CAPACITORS • NPO through N5600 Specifications Electrical Specifications Capacitance: Measured at 1 MHz, 25°C Capacitance Tolerance: Last letter o f part number. B

Contextual Info: KM62V256D, KM62U256D Family CMOS SRAM Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 1.0 History Draft Data Remark Initial draft A p r il! st 1997 Prelim inary Novem ber 12th 1997 Final Finalize - Add 70ns part in KM 62U256D Family

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Contextual Info: Preliminary CMOS SRAM KM616FS4010 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise - DC characteristics change

AD295C

Abstract: AD295A AD295B AD29S "Isolation Amplifiers"
Contextual Info: ANALOG DEVICES □ FEATURES Precision, Hybrid Isolation Amplifier AD295 A D 295 F U N C T IO N A L B L O C K D IA G R A M Low Nonlinearity: ±0 .012 % max AD295C Low Gain Drift: ±60ppm /°C max Floating Input and Output Power: ± 15V d c @ 5mA 3-Port Isolation: + 2500V C M V (Input to Output)

KM62V256CLTGI-10L

Abstract: 62V256
Contextual Info: KM62V256C, KM62U256C Family CMOS SRAM Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. Historv Draft Data Remark 0.0 Design target February 12th 1993 Advance 0.1 Initial draft November 2nd 1993 Preliminary 1.0

Contextual Info: Advance CMOS SRAM KM616V4000C, KM616U4000C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No 0.0 History Initial draft Draft Data Remark January 13th 1998 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

Contextual Info: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17th 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product

KM68U512ALE-L

Contextual Info: K M6 8 V 5 1 2A, K M 6 8 U 5 1 2 A Fami l y CMOS SRAM Document liti 6 4 K x 8 bit L o w P o w e r and L o w V o l t a g e C M O S Static R A M Revision History R evisio n N o . H is to ry D ra ft D ata Rem ark 0.0 Design target January 17th 1996 Advance

Contextual Info: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION FEATURES • P roce ss T e c h n o lo g y : C M O S T h e K M 6 1 6 V 4 0 0 0 B and K M 6 1 6 U 4 0 0 0 B fa m ilie s a re fa b rica te d • O rg a n iz a tio n : 2 5 6 K x 1 6