KM616FS4010 Search Results

Contextual Info: KM616FS4010 Family CMOS SRAM Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 1.0 Finalize - DC characteristics change ICC1 : 3mA → 4mA

Contextual Info: Preliminary CMOS SRAM KM616FS4010 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise - DC characteristics change

Contextual Info: Preliminary CMOS SRAM KM616FS4010 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise DC characteristics change I c c i : 3m A -> 4m A

Contextual Info: Preliminary CMOS SRAM KM616FS4010 Family Document Title 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 2, 1998 Advance 0.1 Revise - DC characteristics change

CYPRESS SAMSUNG CROSS REFERENCE

Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
Contextual Info: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V