KM616FS4110 Search Results
KM616FS4110 Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| KM616FS4110ZI-10 | Samsung Electronics | 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Original | 170.18KB | 9 | ||
| KM616FS4110ZI-10 | Samsung Electronics | 100ns, V(cc): -2 to +3V, 1W, 256K x 16-bit super low power and low voltage full CMOS static RAM | Scan | 464.33KB | 9 | ||
| KM616FS4110ZI-7 | Samsung Electronics | 256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM | Original | 170.18KB | 9 | ||
| KM616FS4110ZI-7 | Samsung Electronics | 70ns, V(cc): -2 to +3V, 1W, 256K x 16-bit super low power and low voltage full CMOS static RAM | Scan | 464.33KB | 9 |
KM616FS4110 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: KM616FS4110 Family Preliminary CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change |
OCR Scan |
km616fs4110256kx1610/5na48-csp | |
|
Contextual Info: Preliminary CMOS SRAM KM616FS4110 Family Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change |
Original |
km616fs4110256kx1648-csp25/typ+2 | |
|
Contextual Info: KM616FS4110 Family CMOS SRAM Document Title 256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft April 8, 1998 Advance 0.1 Revise - DC characteristics change ICC1: 3mA → 4mA |
Original |
km616fs4110256kx1648-csp25/typ+2 | |
KM616FS4110ZI-10
Abstract: KM616FS4110ZI-7
|
OCR Scan |
km616fs4110256kx1610/5na48-csp+2 |