1V02 Search Results

Contextual Info: 1V02H TOSHIBA TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE H N 1V02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)

Contextual Info: 1V02H T O SH IB A TOSHIBA TRANSISTOR SILICON EPITAXIAL PLANAR TYPE H N 1V02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS. . • • • High Capacitance Ratio : C IV / C8V = 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)

1V02H

Abstract: HN1V02H
Contextual Info: 1V02H 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1V02H ○ AM チューナ電子同調用 単位: mm • 容量変化比が大きい。 : C1V/C8V = 19.5 標準 • 性能指数が高い。 • 1 パッケージに 2 素子を内蔵しています。

NTE74HC4067

Abstract: NTE4097B NTE74HC299 NTE4017B NTE4007 NTE4023B NTE4027B NTE74HC4053 NTE4553B NTE74HC165
Contextual Info: Semiconductors Integrated Circuits Integrated Circuits cont. Part Number Description NTE40175B IC-CMOS, Quad D-Type Flip-Flop NTE4017B IC-CMOS, Decade Counter w/10 Decoder Outputs NTE40182B IC-CMOS, Look Ahead Carry Generator Part Number Description NTE4018B

LA5607

Abstract: VN02 EN4371
Contextual Info: Ordering num ber: EN4371 Monolithic Linear 1C LA5607 No. 4371 BS/CS Tuner Regulator with Reset, On/Off Function Overview Package Dimensions The LA5607 is a low-dropout voltage regulator IC for BS/CS tuner applications, equipped with four regulators capable of ON/OFF control plus reset function.

1V02H

Abstract: T23ff
Contextual Info: ! • 1T 3 6 2 T O É : TV, 7 —— CATV ^ - + « ? | h IIM « f t : iS?'JffiKAS/J'àV'o rsSO. 65 f i • y - — y - - 0. 8 5 Q 1 2 .5 - + |B ]1 T O W f= 470MHz W $- (C 2/C 2 5 ) 1 T 3 6 5 « Ü y - - : BS ^ EH ¿S 30 2 V r r m (V ) 35 10 T o p r ( °C )

1V130

Abstract: NTE1V095 2V130 1V025 NTE2V480 524V15 NTE524V13 524V13 1V150 NTE2V095
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

524V13

Abstract: NTE524V13 524V15 524V25 2V025 1V130 2V130 varistor 150f NTE1V095 2V020
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

TOSHIBA RF Power Module S-AV24

Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
Contextual Info: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製

1V130

Abstract: 320/20 METAL OXIDE VARISTOR NTE1V095 NTE524V13 524V13 524V25 1V300 2V025 2V130 524V15
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

k192a

Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
Contextual Info: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188

Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

BB 505 Varicap Diode

Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
Contextual Info: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent

ecg semiconductor replacement guide

Abstract: ME 4946 ecg replacement guide ecg semiconductors replacement guide NTE Semiconductor Technical Guide and Cross Refer Fuse 250V 4a jet 392 laptop repairing guide 320/20 METAL OXIDE VARISTOR Jet 2A 250v fuse thermal-cutoff
Contextual Info: Whatever your needs, NTE has the answer! ECG Aerosol Chemicals • Butane Fuel • Smoke Detector Tester Spray • Antistatic Circuit Refrigerants • Electronics Degreasers and Washes • Electronics Contact Cleaners, Degreasers and Washes • Electronics Contact Cleaners

524V13

Abstract: 524V25 2V035
Contextual Info: NTE1V010 thru NTE1V300 NTE2V010 thru NTEV480 NTE524V13 thru NTE524V48 Metal Oxide Varistors MOV Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby drain currents.

2N3980

Contextual Info: MO T O R O L A SC DIODES/O PTO I 35E D •.* b 3 k ? S 5 5 OOflOlOb ? ■ NOT RECOMMENDED FOR NEW DESIGNS I 2N3980 PN Unijunction Transistor Silicon Annular PN Unijunction Transistor . . . designed for military and industrial use in pulse, timing, sensing, and oscillator