METAL Search Results

2sc3892a

Abstract: 2Sc3892a equivalent 2SC3892 c 1173
Contextual Info: 2SC3892A SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT APPLICATIONS. Unit in mm . High Voltage : VcBO ^1500V I 5 . 5 i 0.5 . 0 3 .6± 0.3 3.0 ± 0 .3 . High Speed Switching Resistive Load tf=0.2ys(Typ.) . Collector Metal is Fully Covered with Mold Resin.

Contextual Info: TC74LVQ573F/FW/FS OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT The TC74LVQ573 is a high speed CMOS OCTAL LATCH w ith 3-STATE OUTPUT fabricated w ith silicon gate and double-layer metal w iring C2MOS technology. Designed fo r use in 3.3 Volt systems, it achieves high

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

2SD2499 equivalent

Abstract: 2SD2499
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2499 Unit in nun H O RIZO NTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : V^BO—1500V Low Saturation Voltage : VcE sat = 5V(M ax.)(Ic = 4A, IB = 0.8A) High Speed : tf= 0.3/iS (Typ.) Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin.

2N117

Abstract: 2n117 texas
Contextual Info: TYPE 2N117 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N N O . O L -S 5 8 8 9 6 , M A R C H 19S8 9 to 20 beta spread Specifically designed for high gain at high temperatures mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grams.

Contextual Info: TOSHIBA TC74ACT74P/F/FN/FT TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74ACT74P, TC74ACT74F, TC74ACT74FN, TC74ACT74FT DUAL D -T Y P E FLIP FLOP WITH PRESET AND CLEAR The TC74ACT74 is an advanced high speed CMOS D - FLIP FLOP fabricated with silicon gate and double - layer metal

Contextual Info: TC74LV074F/FN/FS DUAL D-TYPE FLIP FLOP WITH PRESET AND CLEAR Th e TC 7 4 LV Q 7 4 is a High speed CM O S D-FLIP FLOP fa bricated w ith silicon gate and dou ble-layer metal w irin g C 2M OS te ch no logy. D esigned fo r use in 3.3 V o lt systems, it achieves high

74F139 equivalent

Contextual Info: TOSHIBA TC74ACT139 2-to-4 Line Decoder Features: • The TC74ACT139 is an advanced high speed CMOS 2-TO-4 LINE DECODER/DEMULTIPLEXER fabricated with silicon gate and double-layer metal wiring C2MOS technology. It achieves the high speed operation similar to equivalent

2n243

Abstract: 2N244 transistor all
Contextual Info: TYPES 2N243, 2N244 N-P-N GROW N-JUNCTIO N SILICON TRANSISTORS B U L L E T I N NO. DL-S 6 1 2 2 3 8 , D E C E M B E R 1 9 6 1 Oval Welded Package mechanical data The transistor is in an oval w elded p ackag e with glass-to-metal hermetic seal between case an d leads.

2SC3884A

Abstract: 2SK528
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY. HIGH SPEED SWITCHING REGULATOR OUTPUT APPLICATIONS. . High Voltage : 1500V . High Speed Switching Resistive Load tf=0. l(Js(Typ.) . Collector Metal is Fully Covered with Mold Resin.

74hc273

Abstract: tc741
Contextual Info: TC74LVQ273F/FW/FS OCTAL D-TYPE FLIP FLOP WITH CLEAR The TC74LVQ273 is a high speed CMOS OCTAL D-FLIP FLOP fabricated w ith silicon gate and double-layer metal w iring C2M OS technology. Designed for use in 3.3 Volt systems, it achieves high speed operation w hile maintaining the CMOS low power

480b

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT 2 ALL RIGHTS RESERVED. LOC DIST AD 00 R E V IS IO N S LTR DESCRIPTION A DATE REVISED PER E C 0 - 0 5 - 0 1 4 5 4 4 0 3 MAYO6 DWN APVD SK MS D D BUSHING: METAL

toko cps

Abstract: CPS1149 CPS1099 toko 1013
Contextual Info: CPS TOKO Series DC-DC Converters • <3*, OVERVIEW The CPS series o f DC-DC converters are products o f Toko’s original circuit development with built-in high stability and high reliability characteristics. In the structure, metallic housing is used to reduce

Contextual Info: INTEGRATED T O SH IB A QUAD 2 -INPUT CIRCUIT TECHNICAL OR TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74ACT32P/F/FN/FS DATA SILICON MONOLITHIC GATE The TC74ACT32 is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate and double - layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED T O SH IB A TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC74AC74P/F/FN/FS DATA SILICON MONOLITHIC DUAL D -TYP E FLIP FLOP WITH PRESET AND CLEAR The TC74AC74 is an advanced high speed CMOS D - FLIP FLOP fabricated with silicon gate and double - layer metal

SMC MARKING Sk

Abstract: SK520C
Contextual Info: SK52C - SK520C CREAT BY ART 5.0AMPS Surface Mount Schottky Barrier Rectifiers SMC/DO-214AB Features — For surface mounted application — Metal to sillicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place — High surge current capability

Contextual Info: SSH210 CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMB Pb RoHS COMPLIANCE Features — For surface mounted application — Easy pick and place — Metal to silicon rectifier, majority carrier conduction — Low power loss, high efficiency —

6045pt

Abstract: MBR6050PT-60100PT PT-60 MBR60XXPT
Contextual Info: MBR6035PT - MBR60100PT CREAT BY ART Pb 60.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: SK22A - SK215A CREAT BY ART 2.0AMPS. Surface Mount Schottky Barrier Rectifier SMA/DO-214AC Pb RoHS COMPLIANCE Features — For surface mounted application — Metal to silicon rectifier, majority carrier conduction — Low forward voltage drop — Easy pick and place

MBR40200

Abstract: MBR 40150 MBR40150 4045 pt
Contextual Info: MBR4035PT - MBR40200PT CREAT BY ART Pb 40.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

ka band high power fet amplifier schematic

Contextual Info: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description

MBRF1535CT

Contextual Info: MBRF1535CT - MBRF15150CT CREAT BY ART 15.0 AMPS. Isolated Schottky Barrier Rectifiers ITO-220AB Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction

Contextual Info: MBR545 5.0 AMPS. Schottky Barrier Rectifiers Voltage Range 45 Volts Current 5 Amperes TO-220A Features a a a a a a a a Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency

Contextual Info: [ /Title CD40 70B, CD407 7B /Subject (CMO S Quad ExclusiveOR and ExclusiveNOR Gate) /Autho r () /Keywords (Harris Semiconductor, CD400 0, metal gate, CMOS , pdip, cerdip, mil, CD4070B, CD4077B Data sheet acquired from Harris Semiconductor SCHS055 CMOS Quad Exclusive-OR