1SS402 Search Results

1SS402

Contextual Info: 1SS402 TENTATIVE TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS402 High Speed Switching Applications Unit in mm l Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. l Low forward voltage

1SS402

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF 3 = 0.50V (typ.)

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)

Contextual Info: 1SS402 TOSHIBA TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS 1 SS402 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ± 2.1 0.1 • • • • Two ind.0p6i1d.6i1t diodes s.re mounted on four-pin ultra-small packages that are suitable for higher mounting densities.

1SS402

Contextual Info: 1SS402 TOSHIBA TOSHIBA DIODE TENTATIVE HIGH SPEED SWITCHING APPLICATIONS SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS402 Unit in mm 2.1 ± 0.1 • • • • Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.

marking a7

Abstract: 1SS402
Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF 3 = 0.50V (typ.)

1SS402

Contextual Info: 1SS402 東芝ダイオード エピタキシャルショットキバリア形 1SS402 ○ 高速スイッチング用 単位: mm z 4 端子超小型外囲器に独立したダイオードを 2 個搭載しており超高密度実装 に最適です。 z 順電圧が小さい。

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF 3 = 0.50V (typ.)

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS402 Unit: mm High Speed Switching Applications z Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. z Low forward voltage : VF 3 = 0.50V (typ.)

Contextual Info: 1SS402 T O SH IB A TENTATIVE TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATIONS 1 SS402 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities.

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)

1SS402

Contextual Info: 1SS402 TENTATIVE TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS402 High Speed Switching Applications Unit in mm Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage

1SS402

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)

SCJ0004N

Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード

Variable Capacitance Diodes

Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
Contextual Info: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

marking code 62z

Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
Contextual Info: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX

SSM3J307T

Abstract: SSM3J328R SSM3J334R
Contextual Info: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

ESM 740

Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.

LT 543 common cathode

Abstract: CMG03 CMG07 HEDS 5300 toshiba semiconductor catalog DF3S6.8ECT DF2S5.6SC DSR520CT 1SV283B 2fu smd transistor
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2010/9 SCE0004K Rectifiers General-Purpose Rectifiers Average Forward Current

TPCA*8030

Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S

CMZB220

Abstract: CMS17 CES520 CRS20I40A CRS10I30C CUS10I40 CRS30I30A CMZ24 CRS06 CRS10I30B
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 ダイオード 整流用ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツェナーダイオード スイッチングダイオード ショットキバリアダイオード

HN4C06J

Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
Contextual Info: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2