1S94 Search Results

TLC2202

Abstract: TLC2202A TLC2202ACD TLC2202B TLC2202BCD TLC2202CD TLC2202Y A1BL
Contextual Info: TLC2202, TLC2202A, TLC2202B, TLC2202Y Advanced LinCMOS LOW-NOISE PRECISION DUAL OPERATIONAL AMPLIFIERS SLOSQ56A - MAY 1990 - REVISED AUGUST 1994 * TLC2202B is 100% Tested for Noise 30 nV/VHz Max at f = 10 Hz 12 nV/VHz Max at f = 1 kHz * Low Input Offset Voltage . . . 500 joV Max

iei-1209

Abstract: PA1428 IC-6633 IEI-1213 MEI-1202 MF-1134 NEC RELAY DARLINGTON TRANSISTOR ARRAY
Contextual Info: DATA SHEET SILICON TRANSISTOR ARRAY /¿PA1428 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION The/xPA1428 is NPN silicon epitaxial D arlington Power T ransistor A rray th at b u ilt in Surge Absorber 4 circuits

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: u r m TECHNOLOGY MMOTTOM, B I Ü M S I Final Electrical Specifications LTC1594 4-Channel, 3V Micropower Sampling 12-Bit Serial I/O A/D Converter May 1996 FCOTUIKS DCSCMPTIOn • 12 -B it Resolution ■ Auto Shutdown to 1n A The LTC 1594 is a 4-channel, 5V micropower, 12-bit

Contextual Info: DATA SHEET CMOS DIGITAL INTEGRATED CIRCUITS uPD2845GR 1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEM DESCRIPTION ¿ iP D 2 8 4 5 G R is a P L L synthesizer L S I for pager system. This L S I is manufactured using low voltage C M O S process and therefore realized the low power consumption P L L operated on 1 V, 1.3 mA. This L S I is packaged in 16

PC1246C

Abstract: PC1246 uPC1246C 1S945 PC124 UPC1246 1246C
Contextual Info: ÊüPuLAR ANALOG INTEGRATED CIRCUIT »PC 1246C PREDRIVER FOR 3-PHASES DC BRUSHLESS MOTOR DESCRIPTION PACKAGE DIMENSIONS The juPC1246C is silicon monolithic integrated cir­ cuit developed for predriver for 3 phases DC brush less in m illim eters inches 19.4 MAX.

Relay RL1

Contextual Info: DATA SHEET CMOS DIGITAL INTEGRATED CIRCUITS juPD2845GR 1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEM D ES C R IP TIO N /¿PD2845GR is a PLL synthesizer LSI for pager system. This LSI is manufactured using low voltage CMOS process and therefore realized the low power consumption PLL operated on 1 V, 1.3 mA. This LSI is packaged in 16

Contextual Info: January 1994 Edition 1.0 FUJITSU DATA SHEET MB82009-17 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access memory fabricated with CMOS technology.

pc1246c

Abstract: 1246C PC1246 VH 73 T-52-13-25 uPC1246C UPC1246 1S945
Contextual Info: 6427525 N E C ELECTRONICS INC NEC 72C ELECTRONICS INC 72 D/ 08686 »F|bMa7SaS T-52-13-25 □□Dfibflb D BIPOLAR ANALOG INTEGRATED CIRCUIT / / P C 1 2 4 6 C PREDRIVER FOR 3-PHASES DC BRUSHLESS MOTOR DESCRIPTION PACKAGE DIMENSIONS in millimeters inches The //PC1246C is silicon monolithic integrated cir­

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

MTL ICC 301

Abstract: POTENTIOMETERS PP17 rkm 22 rover pp17 MTL ICC 312 potentiometer spindle VU meter withn led CRC17 IEC68
Contextual Info: CRC17 M RC17 M O D U LA R C A R B O N AND CERM ET P O T E N T IO M E T E R S Th e PP17 series includes resis:arce elements [linear and logarithmic , bat:ery switches, drive units, mounting b u cke ts, detents, shielding, cover, and heatsink, which can be efficien tly assenbled to

D142

Abstract: PD2845GR 1S945 C10535J d92 02 D142 M d12 nec
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

7M60

Contextual Info: Ffrëlips ÇOTp g rg g F reiîrnìm ry s;pgc ijficasien HVR High v o lta g e - high vaio - th ic k fflm re sisto rs FEATU S ES QUICK REFERENCE ÜATA + High temperature a:ns veltage stability j # Suitable tor poten&ometer potting: applteaifcns # V V i: d e

st stt 128

Abstract: DIP28 MAB8048 PCD33XXA PCD3755A PCD3755AP PCD3755AT S028 CS203
Contextual Info: P hilips S em iconductors O bjective specification 8-bit microcontroller with on-chip DTMF generator PCD3755A CONTENTS 12 AC CHARACTERISTICS 1 INTRODUCTION 13 PROGRAMMING CHARACTERISTICS 2 FEATURES 3 GENERAL DESCRIPTION 4 ORDERING INFORMATION 5 BLOCK DIAGRAM

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

nec D19

Abstract: 1S945 PD2845GR PPD2845GR PPD2845GR-E1 PPD2845GR-E2 DIODE D16 d11u UPD284 PPD28
Contextual Info: DATA SHEET SHEET DATA CMOS DIGITAL INTEGRATED CIRCUITS PPD2845GR 1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEM DESCRIPTION PPD2845GR is a PLL synthesizer LSI for pager system. This LSI is manufactured using low voltage CMOS process and therefore realized the low power consumption PLL operated on 1 V, 1.3 mA. This LSI is packaged in 16

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

1S94

Abstract: GP1S94 GPIS94 INCOMING RAW MATERIAL INSPECTION method 199C Photointerrupter application notes PPS crack ED-95120 cy7552i02
Contextual Info: PREPARED BY: DATE: APPROVED BY: DATE: I I @&k& &d/z/m SPEC. ELECTROMC NO. ED-95120 ISSUE October 17, 1995 PAGE 9 Pages COMPONENTS REPRESENTA~ GROUP SHARP CORPORATION DMSION OPTO-ELECTRONIC DEVICES DIV. SPECIFICATION / Y DEVICE SPECIFICATION FOR PHOTOINTERRUPTER

diodes IN4001

Abstract: S06 rectifier in648 1S940 rectifier in4004 1S136 1S115 Diodes In4007 1s020 IN4007
Contextual Info: Diodes and Rectifiers Type C a se No. A m p s. (V o lts) (A m p s.) (n A ) Drawing Average Rectified Forward Current C rest Single Max. I R S P E C IA L No. A m bient Tem perature W orking Cycle at P .I.V . FEA TU RES Voltage Surge at 25°C 25°C 50°C 100°C

Texas Instrument AT

Abstract: 1S94 SN54ABT8996 SN74ABT8996
Contextual Info: SN54ABT8996, SN74ABT8996 10-BIT ADDRESSABLE SCAN PORTS MULTIDROP-ADDRESSABLE IEEE STD 1149.1 JTAG TAP TRANSCEIVERS SCBS489 - AUGUST 1994 SN54ABT8996 . . . JT PACKAGE SN74ABT8996 . . . DB OR DW PACKAGE (TOP VIEW) Support the IEEE Standard 1149.1-1990 (JTAG) Test Access Port (TAP) and

1rfd9120

Contextual Info: • H 4 3 D 5 E7 1 OOSMSfl? 7TT ■ a HAS I R F D r r i s 9 1 2 0 I R F D 9 1 2 3 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -1.0 A and -0.8A , -8 0 V and -10 0 V TO P VIEW • rDS ON = 0 .6 H and 0 .8 ÎI

POTENTIOMETERS PP17

Abstract: type ej Potentiometers
Contextual Info: CRC17 J V_ M RC17 M O D U LA R C A R B O N AND C ER M ET P O T E N T IO M E T E R S The PP17 series includes resis:arce elements [linear and logarithmic , bat:ery switches, drive units, mounting buckets, detents, shielding, cover, and heatsink, which can be efficiently assenbled to

Contextual Info: PRELIMINARY a /II^ C a r iflV I I o„T MT2LSYT3272T1/T2, MT4LSY6472T1/T2 32K, 64K x 72 SYNCHRONOUS SRAM MODULE SYNCHRONOUS 32K, 64K x 72 SRAM « n A * i +3-3V s u p p l y w it h c l o c k e d , r e g i s t e r e d INPUTS AND BURST COUNTER n* r > • ■■ r