PPD28 Search Results

Contextual Info: NEC pPD28C05 512 X 8-BIT CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The juPD28C05 is an electrically erasable and program­ mable read-only memory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power supply and is fabricated w ith an advanced CMOS

Contextual Info: NEC NEC Electronics Inc. pPD28C256 32,768 X 8-Bit CMOS EEPROM Description Pin Configuration The /JPD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 32,768 x 8 bits and fabricated with an ad­ vanced CMOS process for high performance and low

nec D19

Abstract: 1S945 PD2845GR PPD2845GR PPD2845GR-E1 PPD2845GR-E2 DIODE D16 d11u UPD284 PPD28
Contextual Info: DATA SHEET SHEET DATA CMOS DIGITAL INTEGRATED CIRCUITS PPD2845GR 1 V, 1.3 mA, 94MHz PLL SYNTHESIZER LSI FOR PAGER SYSTEM DESCRIPTION PPD2845GR is a PLL synthesizer LSI for pager system. This LSI is manufactured using low voltage CMOS process and therefore realized the low power consumption PLL operated on 1 V, 1.3 mA. This LSI is packaged in 16

D28C256

Abstract: pd28c256
Contextual Info: NEC JIPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configuration The pPD28C256 is a 262,144-bit electrica lly erasable and program mable read-only memory EEPROM orga­ nized as 32,768 x 8 bits and fabricated w ith an ad­

6066B

Abstract: nec eeprom 1991 AK 1021
Contextual Info: NEC NEC Electronics Inc. JUPD28C64 8192 X 8-Bit CMOS EEPROM The pPD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM organized as 8,192 x 8 bits and fabricated w ith an advanced CMOS process for high performance and low power consump­

d28c256cz

Abstract: uPD28C256 WPH-2 BLC10 PD28C256
Contextual Info: N E C ELECTRONICS INC T^íMá'i ' L^lMit W NEC Electronics Inc. tlE D • b42?S2S 003544b 217 ■ NECE PPD28 C 256 32,768 X 8 -Bit CMOS EEPROM Description Pin Configuration The /¿PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga­

d28c64

Contextual Info: NEC NEC ELECTRONICS INC LIE D • t.4275ES GÜ35H3t. 37fl H N E C E pPD28C64 8192 X 8-Bit NEC Electronics Inc. CMOS EEPROM Description Pin Configuration The/iPD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 8,192 x 8 bits and fabricated w ith an advanced

PPD28

Contextual Info: NEC JUPD28C64 8192 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ftPD28C64 is a 65,536-bit electrically erasable and programmable read-only memory EEPROM organized as 8,192 x 8 bits and fabricated w ith an advanced CMOS process for high performance and low power consump­

D28C05

Abstract: AIPD28C05 fjs 500
Contextual Info: N E C ELECTRONICS INC bl E T> • bM27S2S 003542b fk fM ä Y " MET * N E C E fiPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. 1 3 ' 2 ? Description Pin Configuration The fjPD28C05 is an electrically erasable and program­ mable read-only memory EEPROM organized as 512

6023B

Abstract: PD28C04 ho27a
Contextual Info: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga­ nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power

D28C04

Abstract: 6023B upd28c04 PD28C04
Contextual Info: N E C ELECTRONI CS NEC INC blE D L.427525 DD3S417 NEC Electronics Inc. Description Pin Configuration The jl/PD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced

D28C64

Abstract: CCS1 PD28C64
Contextual Info: SEC JJPD28C64 8192 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /JPD28C64 is a 65,536-bit electrically erasable and program m able read-only m em ory EEPROM orga­ nized as 8,192 x 8 bits and fab ricated with an advanced CM O S process for high p erform ance and low power

Contextual Info: NEC MPD28C05 512 X 8-BIT CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The fxPD28C05 is an electrically erasable and program­ mable read-only memory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power supply and is fabricated with an advanced CMOS

PC1026C

Abstract: PC1181H pc1185h pc1171c PC1181 PC1178C JE9016 7 segment 24 hr clock circuit PC2002 2SK49
Contextual Info: d F | h4B7SE5 001741^ D ^ N E C ELECTRONICS INC / “ V R /iQ S D I G I T A L I N T E G R A T E D • . C S R C U ÎT ¿ ¿ P D 2 8 1 3 C CLOCK AND RADIO FREQUENCY CO UNTER/DISPLAY C IR C U IT CM OS LSI The /iPD2813C is a CMOS LSI very suitable for U.S. band automotive radios and stereos.

nec d28c04

Contextual Info: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

Contextual Info: SEC fiPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /iPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

Contextual Info: NEC JJPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. PRELIMINARY INFORMATION Description Pin Configuration The /JPD28C256 is a 262,144-bit electrically erasable and program mable read-only memory EEPROM orga­ nized as 32,768 x 8 bits and fabricated w ith an ad­

24-Pin Plastic DIP

Abstract: uPD28C05
Contextual Info: NEC NEC Electronics Inc. fiPD28C05 512 X 8-BIT CMOS EEPROM Description Pin Configuration The /JPD28C05 is an electrically erasable and program ­ mable read-only m em ory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power sup ply and is fab rica te d w ith an advanced

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

uPD28C05

Contextual Info: NEC JUPD28C05 512 X 8-BIT CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /^PD28C05 is an ele ctrica lly erasable and program ­ mable read-only m em ory EEPROM organized as 512 words by 8 bits. The device operates from a + 5-volt power sup ply and is fab ricated w ith an advanced

PD28C04

Abstract: 62b1
Contextual Info: NEC ffPD28C04 512 X 8-Bit CMOS E EPROM NEC Electronics Inc. Description Pin Configuration The fiPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory E EPROM organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power

D28C256

Contextual Info: NEC JUPD28C256 32,768 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿/PD28C256 is a 262,144-bit electrically erasable and programmable read-only memory EEPROM orga­ nized as 32,768 x 8 bits and fabricated with an ad­ vanced CMOS process for high performance and low